PROCESS OF MOSFET Search Results

MIC4426AJ

Abstract: IC4427A MIC4426CM high speed mosfet driver MIC4428AJ MIC4427AJ MIC4426AY MIC4428CM MIC4427CN MIC4428AJB
Contextual Info: MIC4426/4427/4428 Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the M IC426/427/428 family of buffer/

Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

am 4428

Abstract: 5962-8850308PX MIC4428AJ SMD MOSFET DRIVE 4427 8 PIN IC4426 5962-8850307PX MIC4427CN mic4428n SMD IC 751 - 8pin 5962-8850309PX
Contextual Info: MIC4426/4427/4428 Dual 1.5A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the MIC426/427/428 family of buffer/

Contextual Info: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m: Features General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the

Contextual Info: FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85mΩ Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the

Contextual Info: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the

IC4423

Abstract: MIC4424AJ MIC4423BJ IC4423/4424/4425
Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 family of

TH 2267

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

F1S25N06

Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

ic4424

Abstract: 5962-8850305PX
Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 fam ily of

D16N05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

AN7254

Abstract: AN7260 AN9321 AN9322 RFK70N06
Contextual Info: RFK70N06 Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

f16n05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

5962-8850307PA

Contextual Info: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DM OS process. They are improved versions of the MIC426/427/428 family of buffer/

RFP22N10

Abstract: RF1S22N10SM RF1S22N10SM9A TB334
Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

RFP22N10

Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

F50n05l

Abstract: f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334
Contextual Info: RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

AN9321

Abstract: AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Contextual Info: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

AN9321

Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
Contextual Info: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

RFP22N10

Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

f14n05

Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

MARKING WL

Abstract: ultra low igss pA FDZ193P
Contextual Info: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the