PREDICTING OPERATING TEMPERATURE AND EXPECTED LIFETIME Search Results

Predicting-Operating-Temperature-and-Expected-Lifetime

Abstract: Predicting Operating Temperature and Expected Lifetime PCIM 177 variable capacitor C4AK powersystems simulation model electrolytic capacitor capacitor variable dw-dc variable capacitors
Contextual Info: Predicting Operating Temperature and Expected Lifetime of Aluminum-Electrolytic Bus Capacitors with Thermal Modeling Sam G. Parler, Jr. and Laird L. Macomber Cornell Dubilier 140 Technology Place Liberty, SC 29657 Abstract ! Large-can aluminum electrolytic capacitors are widely used as bus capacitors in variable-speed

Contextual Info: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their

RR502A

Abstract: RR504 x2864 X2864A X2816A RR-504 predicting xicor X2816A
Contextual Info: U ff !' VH I I I I iiJ r r* > 3* / y h \ 'i DETERMINING SYSTEM RELIABILITY FROM E2PROM ENDURANCE DATA By Richard Palm • D ata retention refers to the capability of a non­ volatile m emory device to retain valid data under worst case conditions. Xicor has published numerous reliability reports

MKI48Z18

Contextual Info: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.

Contextual Info: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY

200B

Abstract: 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562 program eeprom 24c32
Contextual Info: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase

K6X8008T2B-UF55

Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

eeprom tutorial

Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Contextual Info: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual

program eeprom 24c32

Abstract: eeprom tutorial 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Contextual Info: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual

samsung "failure rate" lcd

Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
Contextual Info: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase

Coffin-Manson Equation

Contextual Info: "Reliability and MTBF Overview" Prepared by Scott Speaks Vicor Reliability Engineering Introduction Reliability is defined as the probability that a device will perform its required function under stated conditions for a specific period of time. Predicting with some degree of

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

BR1632 safety

Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

br1632 br1225

Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

Sanyo supercapacitors

Abstract: ds1307 application notes DS3232 rtc ds1307 ds1307 rtc DS1307 IC APP3816 DS1307 coin cell pc battery holders DS1337
Contextual Info: Maxim > App Notes > REAL-TIME CLOCKS May 26, 2006 Keywords: Battery, cell, super cap, supercap, rechargeable APPLICATION NOTE 3816 Selecting a Backup Source for Real-Time Clocks Abstract: Most Dallas Semiconductor real-time clocks RTCs include a supply input for a backup power source.

maxwell supercapacitor

Abstract: boostcap ultracapacitor ultracapacitor vehicle Maxwell PROCESS
Contextual Info: APPLICATION NOTE Maxwell Technologies BOOSTCAP® Energy Storage Modules Life Duration Estimation 2007 Maxwell Technologies Inc. ® 1012839 1. Goal The objective of this document is to explain the way to use the different physical measurements of an ultracapacitor module in order to extrapolate the vital parameters and to estimate the potential operating

LM-80-2008

Abstract: cree led 12 volt lamps cree lm 802008 LM80-2008
Contextual Info: Cree XLamp® Long-Term Lumen Maintenance July 2009 This application note outlines Cree’s long-term testing methodology and provides Cree’s guidance on mean L70 lifetimes for XLamp XR-E LED lamps in a wide range of operating conditions. Using this application note, LED

T8570

Contextual Info: T S G S -T H O M S O N “ 7# M K48Z30 M K48Z30Y rZ CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

"OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"

Abstract: william mcmurray optimum snubbers power semiconductors McMurray SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS Ultrafast RECTIFIER DIODES national DIODE 10B3 fast recovery epitaxial diodes transistor Designing RC snubbers RECTIFIER DIODES NATIONAL FRP820
Contextual Info: INTRODUCTION A key device in all high voltage AC-DC power supplies is the ultrafast reverse recovery rectifier diode These diodes D1 and D2 in Figure 1 not only play a major role in power supply efficiency but also can be major contributors to circuit electromagnetic interference (EMI) and even cause

Contextual Info: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.

Contextual Info: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341 – DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 150MHz

LT1675-1

Abstract: OPA3875 OPA692 OPA693 OPA875 OPA875ID OPA875IDGKT OPA875IDR
Contextual Info: BurrĆBrown Products from Texas Instruments TIV 675 OPA875 SBOS340 – DECEMBER 2006 Single 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 200MHz

Contextual Info: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341B – DECEMBER 2006 – REVISED DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH