PQFN08AREV6 Search Results

FDMS0310

Contextual Info: FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description „ Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

PQFN08A

Abstract: FDMS86101A
Contextual Info: FDMS86101A N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

Contextual Info: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description „ Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology

Contextual Info: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

MO-240

Contextual Info: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

RCA 900 mhz speakers

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ Max rDS on = 1.5 mΩ at VGS = 10 V, ID = 33 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

FDMS86310

Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description „ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or

MO-240

Abstract: FDMS86101
Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 49 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

PQFN08A

Contextual Info: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description „ Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or

Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or

Contextual Info: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description „ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMS8018

Abstract: MO-240
Contextual Info: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

PQFN08AREV6

Abstract: FDMS FDMS86101
Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description ̈ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

FDMS86101

Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description „ Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or

MO-240

Abstract: PQFN08AREV6
Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have

PQFN08AREV6

Contextual Info: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FDMS86101

Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and