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    FLIP ELECTRONICS FDMS1D2N03DSD

    MOSFET 2N-CH 30V 19A 8PQFN
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    DigiKey FDMS1D2N03DSD Reel 27,910 500
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    • 1000 $1.03
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    onsemi FDMS86320

    MOSFET N-CH 80V 10.5A/22A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS86320 Cut Tape 18,731 1
    • 1 $1.69
    • 10 $1.204
    • 100 $0.9027
    • 1000 $0.7478
    • 10000 $0.7478
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    FDMS86320 Digi-Reel 18,731 1
    • 1 $1.69
    • 10 $1.204
    • 100 $0.9027
    • 1000 $0.7478
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    FDMS86320 Reel 15,000 3,000
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    • 10000 $0.6705
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    TME FDMS86320 1
    • 1 $1.33
    • 10 $1.2
    • 100 $0.95
    • 1000 $0.89
    • 10000 $0.89
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    Richardson RFPD FDMS86320 3,000
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    • 10000 $0.67
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    Avnet Asia FDMS86320 9 Weeks 3,000
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    • 10000 $0.68769
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    Avnet Silica FDMS86320 10 Weeks 3,000
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    EBV Elektronik FDMS86320 11 Weeks 3,000
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    FLIP ELECTRONICS FDMS5361L-F085

    60V, 35A, 11.7M, POWER56 N-CHANN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS5361L-F085 Reel 18,000 1,500
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    FLIP ELECTRONICS FDMS3602AS

    MOSFET 2N-CH 25V 15A/26A POWER56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS3602AS Reel 8,017 2,000
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    • 10000 $0.45
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    FLIP ELECTRONICS FDMS86550ET60

    MOSFET N-CH 60V 32A/245A POWER56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS86550ET60 Reel 6,000 200
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    Find more FDMS price and stock on Findchips.com

    FDMS Datasheets (232)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS001N025DSD onsemi MOSFET 2N-CH 25V 8PQFN Original PDF
    FDMS001N025DSD onsemi MOSFET 2N-CH 25V 8PQFN Original PDF
    FDMS003N08C ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - FET ENGR DEV-NOT REL Original PDF
    FDMS004N08C ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 126A 8PQFN Original PDF
    FDMS007N08LC onsemi MOSFET N-CH 80V 14A/84A 8PQFN Original PDF
    FDMS007N08LC onsemi MOSFET N-CH 80V 14A/84A 8PQFN Original PDF
    FDMS015N04B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 31.3A 8-PQFN Original PDF
    FDMS0300S ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 31A Original PDF
    FDMS0302S ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 29A Original PDF
    FDMS0306AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 26A PT8 Original PDF
    FDMS0308AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 24A PT8 Original PDF
    FDMS0308CS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V POWER56 Original PDF
    FDMS0309AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 21A PT8 Original PDF
    FDMS030N06B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 60V 22.1A POWER56 Original PDF
    FDMS0310AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 19A PT8 Original PDF
    FDMS0310S ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 19A Original PDF
    FDMS0312AS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 18A PT8 Original PDF
    FDMS0312S Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 19A POWER56 Original PDF
    FDMS037N08B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 100A 8QFN Original PDF
    FDMS039N08B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 19.4A POWER56 Original PDF
    ...

    FDMS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet L 3055

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86150 FDMS86150 mosfet L 3055 PDF

    FDMS7658

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS7658AS FDMS7658AS FDMS7658 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS8090 PowerTrench Power Stage 100 V Symmetric Dual N-Channel MOSFET General Description Features This device includes two fast switching Qgd minimized 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal


    Original     		FDMS8090 FDMS8090 PDF

    FDMS86252

    Abstract: rca 505 202tJ
    Text: FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86252 FDMS86252 rca 505 202tJ PDF

    FDMS2506SDC

    Abstract: No abstract text available
    Text: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		FDMS2506SDC FDMS2506SDC PDF

    c151A

    Abstract: FDMS3602S
    Text: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A


    Original     		FDMS3602S c151A FDMS3602S PDF

    FDMS86201

    Abstract: FDMS86201/pdf/MAX13042EETD -datasheet
    Text: Preliminary Datasheet FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86201 FDMS86201 FDMS86201/pdf/MAX13042EETD -datasheet PDF

    FDMS8692

    Abstract: No abstract text available
    Text: FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0mΩ Features General Description „ Max rDS on = 9.0mΩ at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS8692 FDMS8692 PDF

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86101 FDMS86101 PDF

    FDMS6681Z

    Abstract: RCA 7803
    Text: FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.5 mΩ Features General Description „ Max rDS on = 3.5 mΩ at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package


    Original     		FDMS6681Z FDMS6681Z RCA 7803 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMS86201 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDMS015N04B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS on = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored


    Original     		FDMS039N08B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		FDMS030N06B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5mΩ Features „ Typ rDS on = 6.5mΩ at VGS = 10V, ID = 60A „ Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control


    Original     		FDMS5360L PDF

    NS4263

    Abstract: FDMS5672 106A
    Text: FDMS5672 N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mΩ Features tm General Description „ Max rDS on = 11.5mΩ at VGS = 10V, ID = 10.6A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		FDMS5672 FDMS5672 NS4263 106A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS8672AS N-Channel tm SyncFETTM PowerTrench 30V, 28A, 5.0m: Features General Description „ Max rDS on = 5.0m: at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMS8672AS FDMS8672AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS2380 Dual Integrated Solenoid Driver Features General Description ̈ 5A, 60V Load Clamp The FDMS2380 is an intelligent low side driver with built in recirculation and demagnetization circuits designed specifically for driving inductive loads. The inputs are


    Original     		FDMS2380 FDMS2380 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally


    Original     		FDMS7606 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		FDMS2502SDC FDMS2502SDC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.3 mΩ Features General Description „ Max rDS on = 9.3 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMS7694 FDMS7694 PDF

    FDMS7558S

    Abstract: No abstract text available
    Text: FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features General Description „ Max rDS on = 1.25 mΩ at VGS = 10 V, ID = 32 A The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMS7558S FDMS7558S PDF

    FDMS7560S

    Abstract: No abstract text available
    Text: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 m: Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS7560S FDMS7560S PDF

    FDMS8320LDC

    Abstract: FDMS8320 l41b
    Text: FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 130 A, 1.1 mΩ Features General Description „ Max rDS on = 1.1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A This N-Channel MOSFET is produced using Fairchild


    Original     		FDMS8320LDC FDMS8320LDC FDMS8320 l41b PDF