Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER IGBT AT 30 MHZ Search Results

    POWER IGBT AT 30 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER IGBT AT 30 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RJP60F4DPQ-A0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A PDF

    rjp60f4

    Abstract: RJP60F
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A rjp60f4 RJP60F PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) PDF

    RJH60F4

    Abstract: PRSS0003ZH-A RJH60F
    Text: Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching R07DS0325EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0200 PRSS0003ZH-A O-247A) RJH60F4 PRSS0003ZH-A RJH60F PDF

    STGF30NC60S

    Abstract: STGP30NC60S
    Text: STGF30NC60S STGP30NC60S 30 A - 600 V - fast IGBT Features • Very low on-voltage drop VCE(sat ■ High current capability ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. TO-220 Application


    Original     		STGF30NC60S STGP30NC60S O-220 O-220FP GF30NC60S GP30NC60S STGF30NC60S STGP30NC60S PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A to9044 PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4 PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4 PDF

    RJH60F6DPK

    Abstract: RJH60F6
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A RJH60F6DPK RJH60F6 PDF

    RJH60T04

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60T04DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0985EJ0100 Rev.1.00 Dec 05, 2012 Features • Optimized for current resonance application  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60T04DPQ-A0 R07DS0985EJ0100 PRSS0003ZH-A O-247A) RJH60T04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A curren9044 PDF

    PRSS0004ZE-A

    Abstract: SC-65
    Text: Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Features • Ultra high speed switching tf = 36 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load  Low on-state voltage


    Original     		RJH6086BDPK R07DS0470EJ0100 PRSS0004ZE-A PRSS0004ZE-A SC-65 PDF

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0325EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F4DPQ-A0 R07DS0325EJ0100 PRSS0003ZH-A O-247A) RJH60F4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Features • Ultra high speed switching tf = 36 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load  Low on-state voltage


    Original     		RJH6086BDPK R07DS0470EJ0100 PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A PDF

    RJH60T4

    Abstract: RJH60
    Text: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60T4DPQ-A0 R07DS0460EJ0100 PRSS0003ZH-A O-247A) RJH60T4 RJH60 PDF

    rjh60t4

    Abstract: rjh60t
    Text: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60T4DPQ-A0 R07DS0460EJ0100 PRSS0003ZH-A O-247A) rjh60t4 rjh60t PDF

    Untitled

    Abstract: No abstract text available
    Text: SSR3A High Speed 3 Amp Solid-State Relay Key Features • •   6 ns Switching Speed 0 to 5 MHz input frequency 60 ns minimum pulse width Power and signal inputs isolated from sources.  Easy replacement of IGBTs NO Resoldering Necessary! Figure 1 - SSR3A Simplified Circuit Diagram


    Original     		PDF

    IGBT power loss

    Abstract: three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG
    Text: A New Low-Cost Flexible IGBT Inverter Power Module for Appliance Applications Mario Battello, Neeraj Keskar, Peter Wood, Mor Hezi, Alberto Guerra International Rectifier Appliance & Consumer Group, El Segundo CA as presented at PCIM China, March 2003 Abstract- Power modules for inverterized motor drive


    Original     		AN1044 IGBT power loss three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG PDF

    ACPL-332J

    Abstract: ACPL-332J-000E E55361 332J 1200V
    Text: ACPL-332J 2.5 Amp Output Current IGBT Gate Driver Optocoupler with Integrated VCE Desaturation Detection, UVLO Fault Status Feedback and Active Miller Clamping Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product


    Original     		ACPL-332J ACPL-332J AN5314 AN5315 AN1087 AN1043 AV02-0120EN ACPL-332J-000E E55361 332J 1200V PDF

    404PI

    Abstract: 409PI IXDD408SI 402PI 404SI 414PI 402SI RF MOSFET Driver "IGBT Drivers" IXDN
    Text: Integrated Circuits Ultra-fast Power MOSFET / IGBT Drivers These ultra-fast high current drivers are optimized for high efficiency performance in the motor drive and power conversion applications. They are designed to switch largest MOSFETs and IGBTs with minimum switching times at frequencies to 10 MHz.


    OCR Scan     		O-263 O-220 414PI 414YI 414YM 414CI 414CM 414PI 414YI 414YM 404PI 409PI IXDD408SI 402PI 404SI 402SI RF MOSFET Driver "IGBT Drivers" IXDN PDF