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sc22101

Abstract: SC22101CN intel 8185
Contextual Info: SC22101/SC22201 Electrically Erasable, Programmable Memories 'i» r SIERRA SEMICONDUCTOR 18-PIN DIP PA CK A G E □ M ultiplexed a d d ress a n d d ata bus □ D ata polling □ 10,000 e ra se /w rite cycles □ M inim um 10 y ears data retention 1C 2C 1 18

2864AE-205

Abstract: M2864B
Contextual Info: Am2864AE Adva£ 8 1 9 2 x 8-Bit Electrically Erasable P R O M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V o nly ope ra tio n M ilitary te m p e ra tu re range a v ailab le S e lf-tim e d W rite C ycle w ith o n -c h ip la tche s D ata Polling for e n d -o f-w rite in dicatio n

CS8900A-CQ3

Abstract: MSP430F149 DIL32 schematic RJ45 low connector pcb board with transformer 8 bit Microcontroller schematic
Contextual Info: CS8900A-H rev 1.00/07-2006 CS8900A-H is low cost development board with the popular Cirrus Logic CS8900A-CQ3 Ethernet controller. It allow easy to interface any microcontroller with 8 and 16 bit width data bus width, and support both polling and interrupts.

93LC46

Abstract: 93LC46B 93C46 93C46 tssop 93c46 93lc46A 93AA46B 93C06 93LC46A 93XX46A 93AA46
Contextual Info: AN664 M Converting from 93xx46 Devices to 93xx46A/B Devices DESCRIPTION This application note details the process of converting from 93C06, 93C46 and 93LC46 type devices to 93C46B, 93LC46A, and 93LC46B devices. The new 93xx46A/B devices include improved data polling operation and are available in the small 8 pin TSSOP package. The new devices also offer fixed device

Contextual Info: Features • 2.7 to 3.6V Supply - Full Read and Write Operation • Low Power Dissipation - 8 mA Active Current - 50 nA CMOS Standby Current • Read Access Time - 250 ns • Byte Write - 3 ms • Direct Microprocessor Control - DATA Polling - READ/BUSY Open Drain Output on TSOP

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 |jA CMOS Standby Current Read Access Time - 200 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: CAT28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 iA CMOS Standby Current Read Access Time - 200 ns Byte W rite - 3 ms Direct Microprocessor Control DATA Polling

HA19211BNT

Contextual Info: HA19211B, HA 19212 Series High-Speed, Low-Power 8-bit A/D Flash Converter The HA19211B/HA19212 series high-speed, low- Applications p o w e r 8 -b it A /D fla sh c o n v e rte rs re q u ire no sampling or polling circuits. The digital outputs • Digital TV/VCR

Contextual Info: IIIIIC F IT R U rS T SEMI CONDUCTOR • ■ III C A T 28 C 17 A / C A T 28 C 17A I 16K-Bit CMOS E2PROM FEATURES ■ Fast Read Access Times: 200 ns ■ End of Write Detection: -DATA Polling -RDY/BUSY Pin ■ Low Power CMOS Dissipation: -Active: 25mA Max. -Standby: 100p.A Max.

Contextual Info: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

F2M1

Contextual Info: !. es 2Mx16 5V FLASH MODULE W F 2 M 1 6 -X X X 5 ADVANCED1 FEATURES • Access Time of 9 0 ,1 2 0 ,150ns Low Po w er C M O S ■ Packaging: Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66-pin, PGA Type, 1.185 inch square, Herm etic Ceramic

CAT28C16A

Contextual Info: CAT28C16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: ■ Hardware Write Protection –Active: 25 mA Max. –Standby: 100 µA Max. ■ CMOS and TTL Compatible I/O

am2664be

Abstract: rvb ah
Contextual Info: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write

atmel 438

Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
Contextual Info: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles

FO-5900

Contextual Info: FO -5900 Other Outstanding Features > Dual Access > Anti-Junk Fax 50 locations > Batch Transmission (59 locations) > Verification Stamp (optional) > Polling (154 locations) > Program Keys (up to 59) > Group Dialling—Up to 59 Groups/133 Locations > Serial Broadcasting to 154 locations

29LV008B

Abstract: MBM29LV008T
Contextual Info: FUJITSU SEMICONDUCTOR DATASHEET DS05-20825-1E Polling and Toggle Bit f^ j^ fé 'fp r^ ^ é c tio n of program or erase cycle completion • Ready-Busy output RY/BY '//;>;.-./>/ Hardware method for detecéioà^of'program or erase cycle completion • Automatic sleep modfrv;///

atmel 530

Abstract: Atmel 318 atmel 030 28BV64 tce 0041 atmel TSOP top mark AT28BV64
Contextual Info: Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation • • • • • • – 8 mA Active Current – 50 µA CMOS Standby Current Read Access Time - 300 ns Byte Write - 3 ms Direct Microprocessor Control – DATA Polling

msgf

Abstract: rxfm PIC18F8680 AN878 PICC-18 Specifies
Contextual Info: ECANTM Polling Module 1. Introduction. 2 2. Module Features . 2

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE ADVANCED* FEATURES • Access Times of 65, 80ns ■ Simple Byte and Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max • 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400 ■ Data and Toggle bit Polling for End of Write Detection

TDB 1033

Abstract: 1N914 28C17A CAT28C17A CAT28C17ANI-20T
Contextual Info: H CAT28C17A EE GEN FR ALO 16K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: –DATA DATA Polling BSY Pin –RDY/BSY ■ Low Power CMOS Dissipation: –Active: 25 mA Max. –Standby: 100 µA Max.