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    28C17A Search Results

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    28C17A Price and Stock

    Rochester Electronics LLC CAT28C17AWI-20T

    CAT28C17 - 16-KBit Parallel EEPR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AWI-20T Bulk 1,000 75
    • 1 -
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    • 100 $4
    • 1000 $4
    • 10000 $4
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    Rochester Electronics LLC CAT28C17AK20

    IC EEPROM 16KBIT 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AK20 Bulk 520 77
    • 1 -
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    • 100 $3.94
    • 1000 $3.94
    • 10000 $3.94
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    Rochester Electronics LLC CAT28C17AW20

    IC EEPROM 16KBIT 28SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AW20 Bulk 135 77
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    • 100 $3.94
    • 1000 $3.94
    • 10000 $3.94
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    Emerson Process Management CAT28C17AP-20

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    Bristol Electronics CAT28C17AP-20 2
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    Microchip Technology Inc 28C17AT-25I/SOJ31

    2K X 8 EEPROM 5V, 250 NS, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 28C17AT-25I/SOJ31 3,200
    • 1 $13.5
    • 10 $13.5
    • 100 $13.5
    • 1000 $4.725
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    Find more 28C17A price and stock on Findchips.com

    28C17A Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C17A Microchip Technology 16K (2Kx8) CMOS EPROM Original PDF
    28C17A Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/L Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/P Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/SO Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15I/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/L Microchip Technology 16k (2k x 8) CMOS EEPROM Original PDF
    28C17A-15I/L Microchip Technology 16K (2Kx8) CMOS EEPROM Original PDF
    28C17A15I/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C17A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­


    OCR Scan     		bl032Gl QGG7S33 28C17A polS11127D-page bl032Ql 28C17AF 200ns DS11127D-page PDF

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years


    OCR Scan     		28C17A DS11127E-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro c h ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200n.s or 1ms • Data Retention >10 years


    OCR Scan     		28C17A 150ns DS11127C-6 DS11127C-8 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: M $ 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 ¡is or 1 ms • Data Retention >200 years • High Endurance- Minimum 104 Erase/Write Cycles


    OCR Scan     		ROY/B57C 1/01C 28C17A Time--200 DS11127H-page7-23 28C17A 8x20mm PDF

    200B

    Abstract: 28C17A
    Text: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-Pin MS-016AE DS00049M-page 200B 28C17A PDF

    200B

    Abstract: 28C17A DK-2750 RG41
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		28C17A 200B 28C17A DK-2750 RG41 PDF

    Untitled

    Abstract: No abstract text available
    Text: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin S-016 DS00049M-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years


    OCR Scan     		28C17A DS11127E-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 28C17AF DS11127E-page 8x20mm PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-updates. DS11127F L103201 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years


    OCR Scan     		28C17A 150ns 200ns 28C17A DS11127C-7 28C17AF 200ns PDF

    28C17A

    Abstract: No abstract text available
    Text: ^ÊÊÊÊÈ.^- & M ic r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		28C17A 32-Pin MS-016AE DS00049M-page PDF

    tce 1994

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC


    Original     		28C17A Time--150 Time--200 DS11127F-page tce 1994 PDF

    28C17A

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original     		28C17A D-85737 NL-5152 28C17A PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 14 28 27


    Original     		28C17A DS11127G-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation


    OCR Scan     		28C17A 250ns 28C17A The28C17A DS11134A-6 DS11134A-8 PDF

    10F-1C

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C17A M ig z r o n c h ip i 16K 2K X 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms • Data Retention >200 years


    OCR Scan     		32-Pin DS111271-page 10F-1C PDF

    28C17A

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin 28-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K X 8 CMOS Electrically Erasable PROM need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device


    OCR Scan     		28C17A 28C17AF DS11127D-page PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		28C17A Time--150 Time--200 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		28C17A 32-Pin 28C17AF 8x20mm 28C17A DS11127E-page PDF

    Untitled

    Abstract: No abstract text available
    Text: & 28C17A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C17A is a CMOS 16K non-volatile electrically Erasable and Programm able Read Only Memory. The 28C17A is accessed like a


    OCR Scan     		28C17A 28C17A 28C17AF 26C17A PDF

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original     		28C17A D-85737 NL-5152 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:


    OCR Scan     		CAT28C17A 16K-Bit CAT28C17A CAT28C17A. 28C17A CAT28C17ANI-20TE7 PDF