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    PNP AVALANCHE TRANSISTOR Search Results

    PNP AVALANCHE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP AVALANCHE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2151A

    Abstract: 2SA2151A 2SA1668A 2SC6011A A2151 SANKEN AUDIO Sanken Transistor Mt 200 PNP a2151a sanken SSE 23014 G746
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151A SSE-23014 A2151A 2SA2151A 2SA1668A 2SC6011A A2151 SANKEN AUDIO Sanken Transistor Mt 200 PNP a2151a sanken SSE 23014 G746

    a2151a

    Abstract: 2SA2151A SANKEN AUDIO 2SA1668A sanken power audio
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151A 2SC6011A 2SA1668A a2151a SANKEN AUDIO 2SA1668A sanken power audio

    transistor a2151

    Abstract: A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260
    Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151 SSE-23012 transistor a2151 A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260

    Untitled

    Abstract: No abstract text available
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151A

    transistor a2151

    Abstract: A2151 2sa2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"
    Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151 2SC6011 2SA1668 transistor a2151 A2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


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    PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


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    PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    transistor 471A

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY avalanche diode SLA4010 471A STA301A pnp darlington array npn darlington array AVALANCHE TRANSISTOR PNP avalanche transistor
    Text: Transistor array with built-in avalanche diode SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6 The Darlington transistor chip with a built-in avalanche diode is a planar type monolithic Darlington transistor chip having


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    PDF SLA4010, STA301A, SDC03, transistor 471A pnp DARLINGTON TRANSISTOR ARRAY avalanche diode SLA4010 471A STA301A pnp darlington array npn darlington array AVALANCHE TRANSISTOR PNP avalanche transistor

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


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    PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    RGK 20/1

    Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
    Text: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4


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    PDF AMS-174 RGK 20/1 sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic

    Untitled

    Abstract: No abstract text available
    Text: PNP MJ11021 (NPN) MJ11022 Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. http://onsemi.com • High dc Current Gain @ 10 Adc − • • •


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    PDF MJ11021 MJ11022 MJ11022,

    TRANSISTOR SMD catalog

    Abstract: Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR
    Text: GENERAL INFORMATION SANKEN PRODUCT PREFIXES Prefix Description Info Prefix Description AG Axial-lead ultra-fast recovery rectifier ❊❏ FMS Full mold high-speed rectifier AK Axial-lead Schottky barrier diode ❊❏ FMU Full mold TO-220/TO-3P fast-recovery rectifier


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    PDF C01EA0 D01EB0 D03EB0 I01EC0 I02EA0 L01EA0 O01EC0 T01EC0 TRANSISTOR SMD catalog Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR

    J3305-2 y transistor

    Abstract: No abstract text available
    Text: Application Note AN01 - Transistor Testing Over the past decade, Elm Electronics has helped many experimenters that were having trouble getting their circuits working. Experience has shown that the majority of problems were related to the incorrect connection of transistors in the circuit. Even the most


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    50R0500

    Abstract: 5SSB30X 5SSB30X0800 thyris
    Text: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering


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    PDF 5SSA20R15 50X0400 38X0600 30X0800 26X2200 23X2400 23X2600 20X2800 20X3000 50R0500 5SSB30X 5SSB30X0800 thyris

    2SD1641

    Abstract: tcl tv circuit
    Text: Power Transistors 2SD1Ó41 2SD1641 Silicon PNP Triple-Diffused Planar Type Package D im ensions High DC C urrent Gain h FE , High Power A m plifier TV Power Source O utput • Features • Wide area of safety operation (ASO) • P rotective avalanche diode built-in


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    PDF 2SD1641 JO-10 2SD1641 tcl tv circuit

    JE4352

    Abstract: e435 E4340M MJE4352 MJE4340 MJE4341 MJE4342 MJE4350 MJE4351 E4343
    Text: Æ&m o s p e c COMPLEMENTARY SILICON HIGH-VOLTAGE HIGH-POWER TRANSISTORS NPN MJE4340 MJE4341 MJE4342 MJE4343 . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. FEATURES: * Collector-Emitter Sustaining Voltage VCEO .u.f 100V(Min - MJE4340,MJE4350


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    PDF E4340, E4350 MJE4341 MJE4351 E4342, E4352 E4343, E4353 MJE4340 MJE4350 JE4352 e435 E4340M MJE4352 MJE4341 MJE4342 MJE4350 E4343

    bss170

    Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
    Text: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-


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    PDF 625mW) FMMT617 FMMT717 FMMT625 /FMMT624 FMMT619 FMMT618 FZT1053 30/FZT1051 bss170 BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99

    VHF Transistors

    Abstract: AVALANCHE TRANSISTOR bss65 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
    Text: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS V CBO V CEO lc Volts Volts mA Type Ptot mW v ;E(sat hFE min./max. at Iq/Vce max at Ic /Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30


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    PDF OT-23 FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 BC860A VHF Transistors AVALANCHE TRANSISTOR bss65 FMMT415 BC860B

    229 transistor npn

    Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
    Text: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)


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    PDF OT223 750mA) 229 transistor npn PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST

    FMMT415

    Abstract: VHF Transistors BC856A BC856B BC857A BC857B BCW69 BCW70 BCW89 FMMT3905
    Text: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS PNP Type BC856A P,o, V ^E(sat) Hf min./max. Eat Ir/V CE max at Iç/I b m A/volts Volts mA typ. MHz 150 yc,B° V CEO 'c mA mW 80 65 100 350 11 0/22 0 Volts Volts 2/5 0 .3 10/0.5 BC856B 80 65 100 350


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    PDF OT-23 BC856A BC856B BCW89 FMMT3905 FMMT3906 FMMTA70 FMMT5087 BCW69 BCW70 FMMT415 VHF Transistors BC857A BC857B

    VHF Transistors

    Abstract: ZTX325 2N2708 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
    Text: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS VCBO VCEO lc Volts Volts mA Type P to t mW v ;E(sat hFE min./max. at Iq/V ce max at Ic/Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30


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    PDF OT-23 FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 BC860A VHF Transistors ZTX325 2N2708 FMMT415 BC860B

    MJ11021

    Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
    Text: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance


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    PDF MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 MJ11020 mj11011 MJ11018 MJ11022 transistor revers characteristic transistor MJ11020

    TIP33C

    Abstract: TIP34 TIP34C TP338 p34a TIP33 TIP33A TIP33B TIP34A TIP34B
    Text: Ü & M O S P E C COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS NPN TIP33 TIP33A TIP33B TIP33C . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage V ceo « -f 40V(Min - TIP33.TIP34


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    PDF TIP33 TIP34 TIP33A TIP34A TIP33B TIP34B TIP33C TIP34C TIP34 TIP34C TP338 p34a