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    G746 Search Results

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    G746 Price and Stock

    TE Connectivity FG7463

    RF ANT 771MHZ WHIP STR N FEM
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    DigiKey FG7463 Bulk 4
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    Avnet Americas FG7463 Bag 5 Weeks, 6 Days 4
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    Mouser Electronics FG7463
    • 1 $91.23
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    Interstate Connecting Components FG7463
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    Sager FG7463 1
    • 1 $121.65
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    TE Connectivity FG7466

    RF ANT 771MHZ WHIP STR N FEM
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    DigiKey FG7466 Bulk 10
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    Avnet Americas FG7466 Tube 5 Weeks, 6 Days 3
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    Mouser Electronics FG7466
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    Interstate Connecting Components FG7466
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    Avnet Abacus FG7466 113 Weeks 3
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    Sager FG7466 10
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    Fix Supply BULK-CS-GG7-46

    G-7 Garolite Sheet - 1/2" Thick
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    DigiKey BULK-CS-GG7-46 Bulk 1
    • 1 $290.66
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    Daniels Manufacturing Corporation (DMC) G746

    Measuring Tools Gage Go .2020 No-Go 0.21
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    Mouser Electronics G746
    • 1 $524.8
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    Laird Connectivity Inc FG7463

    Antenna, OMNI, FG,746-796MHz, | Laird Connectivity LLC FG7463
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    RS FG7463 Bulk 8 Weeks 4
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    Master Electronics FG7463
    • 1 $117.72
    • 10 $97.85
    • 100 $85.15
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    G746 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SLA7078MPR

    Abstract: G746 SLA7062M yg6260
    Text: 1-2 Motor Driver ICs Application Note • Setup Precautions ■ Handling Precautions ●Recommended mounting torque 0.588 to 0.784 [N•m] 6.0 to 8.0 [kgf•cm] ●Recommended silicone grease Shin-Etsu Chemical Co., Ltd.: G746 GE Toshiba Silicones Co., Ltd.: YG-6260


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    YG-6260 SC102 SMA7036M/SLA7031M/SLA7032M/SLA7033M SLA7050M/SLA7051M/SLA7052M SLA7060M/SLA7061M/SLA7062M SLA7065M/SLA7066M/SLA7067M SLA7070MR/SLA7071MR/SLA7072MR/SLA7073MR SLA7070MPR/SLA7071MPR/SLA7e SLA7078MPR G746 SLA7062M yg6260 PDF

    shinetsu G746

    Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal


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    AN-GEN-001 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical PDF

    Dow Corning 747

    Abstract: 2a265vac 2A265 s202t01f S202T01 shin-etsu g747 sharp S202T02 2A125VAC s202t02 origin 4pin
    Text: S102T01 Series S202T01 Series IT rms ≤2A, Non-Zero Cross type Low profile SIP 4pin Triac output SSR S102T01 Series S202T01 Series ∗ Zero cross type is also available. (S102T02 Series/ S202T02 Series) • Description ■ Agency approvals/Compliance S102T01 Series and S202T01 Series Solid State


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    S102T01 S202T01 S102T02 S202T02 UL508, E94758 Dow Corning 747 2a265vac 2A265 s202t01f shin-etsu g747 sharp S202T02 2A125VAC origin 4pin PDF

    sma6822

    Abstract: sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260
    Text: SMA6822MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply


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    SMA6822MP 24-pin) SMA6822MP sma6822 sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260 PDF

    TO-126LP

    Abstract: No abstract text available
    Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle


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    F 2452 mosfet

    Abstract: SMA6862M B105 CF35 G746 SC102 SMA6800M YG6260
    Text: SMA6862M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


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    SMA6862M 24-pin) SMA6862M F 2452 mosfet B105 CF35 G746 SC102 SMA6800M YG6260 PDF

    M100 TRIAC

    Abstract: No abstract text available
    Text: TMA16xP Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 16 ARMS on-state current


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    TMA16xP M100 TRIAC PDF

    3025Z

    Abstract: 02578 SC102 diode G746 SC102 SI-3025ZD SI-3025ZF SSJ-02578
    Text: SI-3025ZF Data Sheet 27468.27* ar ors e n t Li ula g e R High-Current, Low-Dropout, 2.5 V Regulator Designed to meet the high-current requirements in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office equipment, the SI-3025ZF voltage regulator offers the


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    SI-3025ZF SI-3025ZF 3025Z 02578 SC102 diode G746 SC102 SI-3025ZD SSJ-02578 PDF

    3phase MOSFET INVERTER

    Abstract: sla68 B105 CF35 G746 SC102 SMA6861M YG6260 INVERTER ALLEGRO 24 samsung flyback pin diagram
    Text: SMA6851M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating power supply Built-in protection circuit for controlling power supply


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    SMA6851M 24-pin) SMA6851M 3phase MOSFET INVERTER sla68 B105 CF35 G746 SC102 SMA6861M YG6260 INVERTER ALLEGRO 24 samsung flyback pin diagram PDF

    sma6863

    Abstract: sma6863m samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet
    Text: SMA6863M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


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    SMA6863M 24-pin) SMA6863M sma6863 samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet PDF

    CF35

    Abstract: FM20 G746 SC102 TMA54S-L TMA56S-L YG6260 6562-9 samsung washing machine circuit diagram
    Text: TMA5x Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 5 ARMS on-state current


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    E118037) O-220F) CF35 FM20 G746 SC102 TMA54S-L TMA56S-L YG6260 6562-9 samsung washing machine circuit diagram PDF

    samsung flyback pin diagram

    Abstract: flyback samsung B105 CF35 G746 SC102 YG6260
    Text: SCM1101MF High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turning on ▪ Bootstrap diodes with series resistors for suppressing


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    SCM1101MF samsung flyback pin diagram flyback samsung B105 CF35 G746 SC102 YG6260 PDF

    burglar alarm definition

    Abstract: B105 CF35 G746 SC102 SCM1104M YG6260 samsung electrolytic aluminum foil capacitor dc motor controller igbt
    Text: SCM1104M High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turning on ▪ Bootstrap diodes with series resistors for suppressing


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    SCM1104M burglar alarm definition B105 CF35 G746 SC102 SCM1104M YG6260 samsung electrolytic aluminum foil capacitor dc motor controller igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-6606S Preliminary Features Package The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45


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    CTXS-6606S CTXS-6606S O-247-3L CTXS-6606S-DS PDF

    marking r55

    Abstract: No abstract text available
    Text: Off-Line PWM Controllers with Integrated Power MOSFET STR4A100 Series General Descriptions Package The STR4A100 series are power ICs for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the


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    STR4A100 marking r55 PDF

    Untitled

    Abstract: No abstract text available
    Text: Primary Side Regulation Off-Line PWM Controllers with Integrated Power MOSFET STR5A100D Series General Descriptions Package The STR5A100D series is power IC with primary side regulation for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC.


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    STR5A100D STR5A100D-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6606S Preliminary Features Package The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15


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    CTNS-6606S CTNS-6606S O-247-3L CTNS-6606S-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: PF0030 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 fiA • Thin Package: 5mm ■ ORDERING INFORMATION P art No. Operating Frequency PF0030 824 to 849 M H z AMPS PF0032 872 to 905 M H z


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    PF0030 PF0030 PF0032 PDF

    Untitled

    Abstract: No abstract text available
    Text: PF0040 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 /xA • Thin Pack ag e: 5 mmt ■ ORDERING INFORMATION Part No. Operating Frequency PF0040 824 to 849 MHz AMPS PFÜ042 872 to 905 MHz


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    PF0040 PF0040 PDF

    CM75RL-12NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE CM75RL-12NF ¡IC . 75A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack


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    CM75RL-12NF CM75RL-12NF PDF

    E80276

    Abstract: FM200TU-3A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated


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    FM200TU-3A E80276 E80271 E80276 FM200TU-3A PDF

    CM150TL-24NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150TL-24NF HIGH POWER SWITCHING USE CM150TL-24NF ¡IC . 150A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack


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    CM150TL-24NF CM150TL-24NF PDF

    "MOSFET Module"

    Abstract: E80276 FM400TU-07A 48V battery forklift
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    FM400TU-07A E80276 E80271 "MOSFET Module" E80276 FM400TU-07A 48V battery forklift PDF

    G746

    Abstract: No abstract text available
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-006-G Date : 30th May 2001 Rev. date : 22th.Jun. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR


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    AN-GEN-006-G G746 PDF