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    PMD11K80 Price and Stock

    TDK-Lambda Corporation PMD11K80

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components PMD11K80 79
    • 1 $18.792
    • 10 $18.792
    • 100 $14.616
    • 1000 $14.616
    • 10000 $14.616
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    PMD11K80 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PMD11K80 Central Semiconductor SILICON POWER DARLING TRANSISTORSl Scan PDF
    PMD11K80 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    PMD-11K-80 LAMBDA Voltage Regulator Data Book 1988 Scan PDF
    PMD11K-80 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    PMD11K80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PMD11K80 Unknown Transistor Replacements Scan PDF
    PMD-11K-80 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    PMD11K80 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    PMD11K80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N5875

    Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 2N5875 BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B

    PMD10K100

    Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8


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    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4000 PMD10K100 PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60

    MJ6503

    Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5


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    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4033 MJ6503 PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40

    Untitled

    Abstract: No abstract text available
    Text: £/-'10ducts., Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVCEO(SUS)= SOV(Min)


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    PDF 10ducts. PMD10K80 PMD11K80 100mA

    LM3661TL-1.40

    Abstract: BUW36 2N6253 2n6545
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 LM3661TL-1.40 BUW36 2N6253 2n6545

    pmd10K80

    Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
    Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB


    OCR Scan
    PDF PMD10K, pmd10K80 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K

    PMD11K100

    Abstract: PMD10K100 PMD10K60 PMD11K60 PMD11K80 PMD10K PMD10K80 PMD11K PMD-10K-60 PMD-10K-100
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR PMD1OK/PMD11K series types are silicon NPN/PNP darlington power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package, and designed for power switching applications. These devices are designed


    OCR Scan
    PDF PMD1OK/PMD11K PMD11K 100mA PMD10K60 PMD11K60) PMD10K80 PMD11K80) PMD10K100 PMD11K100 PMD11K60 PMD11K80 PMD10K PMD-10K-60 PMD-10K-100

    pmd12k-40

    Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
    Text: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160


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    PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 pmd12k-40 2n6543 bu208 LM3661TL-1.40

    80 amp 80v npn darlington

    Abstract: 10 amp npn darlington power transistors with low saturation voltage
    Text: SEMTECH CORP S ñE D • Û I B T I B 11! 00032Sti 577 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD10K, 11K80 PMD10K, 11K100 V ceO Collector Base Voltage PMD10K, 11K80 PMD10K, 11K100 V c 80


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    PDF 00032Sti PMD10K, 11K80 11K100 DGD32tjO 80 amp 80v npn darlington 10 amp npn darlington power transistors with low saturation voltage

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60


    OCR Scan
    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 NM4033

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    J901

    Abstract: PMD1602K PMD16K100 PMD12K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. •e PD bvc b o hpE V cS O @ ic VCE(SAT) @*c TYP (A) NPN PN P BUY69C (W) MAX *TYP (V) (V) MIN UH M m in MIN MAX 2.5 3.3 8.0 10* (A) (V) (A) MAX (MHZ) MIN 10 100 500 200 15 . MJ802 MJ4502 30 200 100 90 25


    OCR Scan
    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4Q34 MJ4035 MJ10012 J901 PMD1602K PMD16K100 PMD12K60

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


    OCR Scan
    PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465

    LM3661TL-1.40

    Abstract: 2N6057
    Text: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713


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    PDF

    BRX49 equivalent

    Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
    Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number


    OCR Scan
    PDF 1N270 1N276 1N283 1N295 1N457A 1N703A 1N705A 1N746A 1N747A 1N750A BRX49 equivalent FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208