Untitled
Abstract: No abstract text available
Text: ADS809 ADS 809 www.ti.com 12-Bit, 80MHz Sampling ANALOG-TO-DIGITAL CONVERTER TM FEATURES DESCRIPTION ● DYNAMIC RANGE: SNR: 65dB at 10MHz fIN SFDR: 68dB at 10MHz fIN The ADS809 is a high-dynamic range 12-bit, 80MHz pipelined Analog-to-Digital A/D converter. It includes a
|
Original
|
PDF
|
ADS809
12-Bit,
80MHz
10MHz
ADS809
|
Untitled
Abstract: No abstract text available
Text: Data sheet acquired from Cypress Semiconductor Corporation. Data sheet modified to remove devices not offered. CY29FCT520T Multi-Level Pipeline Register SCCS011 - May 1994 - Revised February 2000 Features Functional Description • Function, pinout, and drive compatible with FCT, F
|
Original
|
PDF
|
CY29FCT520T
SCCS011
FCT520T
|
diode p4e
Abstract: No abstract text available
Text: TLC34058 256 x 24 COLOR PALETTE SLAS050 – D3961, NOVEMBER 1991 • • • • • • • • LinEPIC 1-µm CMOS Process 125-MHz Pipelined Architecture Available Clock Rates . . . 80, 110, 125, 135 MHz Dual-Port Color RAM 256 Words x 24 Bits Bit Plane Read and Blink Masks
|
Original
|
PDF
|
TLC34058
SLAS050
D3961,
125-MHz
RS-343-A
Bt458
TMS340XX
diode p4e
|
CQFP352
Abstract: QFP352 MCGA349 MCGA-349 adc controller vhdl code atmel 268 AT7913 CQFP352 package vhdl code 64 bit FPU SPARC v8 architecture BLOCK DIAGRAM
Text: ATMEL AT7913E SpaceWire Remote Terminal Controller RTC DATASHEET Features • LEON2-FT Sparc V8 Processor • • • • • • • • • • • 5 stage pipeline 4K instruction caches / 4K data caches Meiko FPU Interrupt Controller Uart serial links
|
Original
|
PDF
|
AT7913E
32-bit
8bit/16bit
200Mbit/s
CQFP352
QFP352
MCGA349
MCGA-349
adc controller vhdl code
atmel 268
AT7913
CQFP352 package
vhdl code 64 bit FPU
SPARC v8 architecture BLOCK DIAGRAM
|
Untitled
Abstract: No abstract text available
Text: CY7C1368C 9-Mbit 256 K x 32 Pipelined DCD Sync SRAM 9-Mbit (256 K × 32) Pipelined DCD Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation ■ Optimal for performance (double-cycle deselect) ❐ Depth expansion without wait state
|
Original
|
PDF
|
CY7C1368C
CY7C1368C
|
Untitled
Abstract: No abstract text available
Text: CY7C1346H 2-Mbit 64K x 36 Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 64K x 36 common I/O architecture • 3.3V core power supply • 3.3V/2.5V I/O operation • Fast clock-to-output times
|
Original
|
PDF
|
CY7C1346H
166-MHz
100-pin
CY7C1346H
133MHz
|
ADS5221
Abstract: ADS5221PFBR ADS5221PFBT OPA695 QFN-48 THS4503 TQFP-48
Text: ADS5221 ADS 522 1 SBAS262C – APRIL 2003 – REVISED JUNE 2007 12-Bit, 65MSPS Sampling, +3.3V ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● The ADS5221 is a pipeline, CMOS Analog-to-Digital Converter ADC that operates from a single +3.3V power
|
Original
|
PDF
|
ADS5221
SBAS262C
12-Bit,
65MSPS
ADS5221
12-bit
ADS5221PFBR
ADS5221PFBT
OPA695
QFN-48
THS4503
TQFP-48
|
MS-026
Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •
|
Original
|
PDF
|
MT55L512L18P,
MT55L512V18P,
MT55L256L32P,
MT55L256V32P,
MT55L256L36P,
MT55L256V36P
100-Pin
119-Pin
165-pin
MT55L512L18P
MS-026
MT55L256L32P
MT55L256L36P
MT55L256V32P
MT55L256V36P
MT55L512V18P
|
AS7C331MNTD32A
Abstract: AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A
Text: November 2004 AS7C331MNTD32A AS7C331MNTD36A 3.3V 1M x 32/36 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.2/3.5/3.8 ns
|
Original
|
PDF
|
AS7C331MNTD32A
AS7C331MNTD36A
100-pin
165-ball
AS7C331MNTD32A
AS7C331MPFD32A
AS7C332MPFD18A
AS7C332MPFS18A
|
A65H73361
Abstract: A65H83181 SA10 SA11 SA12 SA13 SA15
Text: A65H73361/A65H83181 Series 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output Preliminary Document Title 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output Revision History Rev. No. 2.0 PRELIMINARY
|
Original
|
PDF
|
A65H73361/A65H83181
self65H73361P-7
A65H73361
A65H83181
SA10
SA11
SA12
SA13
SA15
|
low input capacitance buffer
Abstract: A112 A113 WM2331 electrolytic capacitor, .1uF 50v
Text: WM2331 10-bit 30MSPS ADC with PGA and Clamp DESCRIPTION FEATURES The WM2331 is a high speed, 10-bit pipeline analogue-todigital converter ADC with on-chip programmable gain amplifier (PGA) and clamp circuit, and internal voltage references. Conversion is controlled by a single clock input.
|
Original
|
PDF
|
WM2331
10-bit
30MSPS
WM2331
low input capacitance buffer
A112
A113
electrolytic capacitor, .1uF 50v
|
K7A323600M
Abstract: K7B321825M-QC65 K7A321800M
Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
|
Original
|
PDF
|
K7A323600M
K7A321800M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
K7A3236
165FBGA
K7A323600M
K7B321825M-QC65
K7A321800M
|
MT55L256L18P1T-10A
Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •
|
Original
|
PDF
|
MT55L256L18P1,
MT55L256V18P1,
MT55L128L32P1,
MT55L128V32P1,
MT55L128L36P1,
MT55L128V36P1
August/7/00
119-pin
165-pin
MT55L256L18P1
MT55L256L18P1T-10A
MS-026
MT55L128L32P1
MT55L128L36P1
MT55L128V32P1
MT55L128V36P1
MT55L256L18P1T-10
MT55L256V18P1
84 FBGA thermal
|
A67L7332
Abstract: A67L7336 A67L8316 A67L8318
Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary LVTTL, Pipelined DBA SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue
|
Original
|
PDF
|
A67L8316/A67L8318/
A67L7332/A67L7336
100MHz)
A67L7332
A67L7336
A67L8316
A67L8318
|
|
IS61DDB21M36
Abstract: 61DDB22M18 IS61DDB22M18-300M3L IS61DDB22M18 IS61DDB22M18-250M3LI
Text: 36 Mb 1M x 36 & 2M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . I May 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late
|
Original
|
PDF
|
oDDB22M18-250M3L
1Mx36
2Mx18
IS61DDB21M36
61DDB22M18
IS61DDB22M18-300M3L
IS61DDB22M18
IS61DDB22M18-250M3LI
|
D0-35
Abstract: IS61QDB42M36 IS61QDB42M36-300M3 IS61QDB44M18 IS61QDB44M18-300M3
Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 4) Synchronous SRAMs 7 Q . May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.
|
Original
|
PDF
|
IS61QDB42M36-300M3
IS61QDB44M18-300M3
IS61QDB42M36-250M3
IS61QDB44M18-250M3
2Mx36
4Mx18
D0-35
IS61QDB42M36
IS61QDB42M36-300M3
IS61QDB44M18
IS61QDB44M18-300M3
|
IS61QDB41M36
Abstract: 61QDB41M36 IS61QDB41M36-250M3L D0-35 IS61QDB41M36-250M3 IS61QDB42M18
Text: 36 Mb 1M x 36 & 2M x 18 QUAD (Burst of 4) Synchronous SRAMs . I April 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.
|
Original
|
PDF
|
IS61QDB41M36-250M3
IS61QDB41M36-250M3L
IS61QDB41M36-200M3
IS61QDB42M18-200M3
1Mx36
2Mx18
IS61QDB41M36
61QDB41M36
IS61QDB41M36-250M3L
D0-35
IS61QDB41M36-250M3
IS61QDB42M18
|
K7A401800B-QC
Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
|
Original
|
PDF
|
K7A403609B
K7A403209B
K7A401809B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
570mA
490mA
K7A401800B-QC
K7A401809B
K7A401809B-QC
K7A403200B-QC
K7A403209B
K7A403209B-QC
K7A403609B
K7B401825B-QC
K7B403225B-QC
|
CY7C1339
Abstract: No abstract text available
Text: fax id: 1109 PRELIMINARY CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features Functional Description • Low 1.65 mW standby power (f=0, L version) The CY7C1339 is a 3.3V 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary
|
Original
|
PDF
|
CY7C1339
CY7C1339
100-MHz
166-MHz
|
MoSys
Abstract: CL018G tsmc 0.18um MoSys sram embedded BWEB M1T1HT18PZ32E C-l018 32K32 MoSys 1T sram
Text: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses
|
Original
|
PDF
|
32Kx32)
M1T1HT18PZ32E
32-Bit
CL018G
2300um
32Kx32
1650um
M1T1HT18PZ32E
MoSys
tsmc 0.18um
MoSys sram embedded
BWEB
C-l018
32K32
MoSys 1T sram
|
GS8161Z18AT-300
Abstract: gs816
Text: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5
|
Original
|
PDF
|
GS8161Z18/36AT-300/275/250/225/200
GS8161Z18/36AT
100-pin
8161Z18A
GS8161Z18AT-300
gs816
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst
|
OCR Scan
|
PDF
|
TC55V2325FF-100
TC55V2325FF
64KX32
LQFP100-P-1420-0
|
UM61L3232AF-7
Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write
|
OCR Scan
|
PDF
|
UM61L3232A
100-pin
10jiA.
UM61L3232AF-5
UM61L3232AE-5
UM61L3232AF-6
UM61L3232AE-6
UM61L3232AF-7
UM61L3232AE-7
um61
UM61L
UM61L3232
UM61L3232AF-8
UM61-l-3232af
|
AxC11
Abstract: No abstract text available
Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.
|
OCR Scan
|
PDF
|
DG3R58b
16Mbit
bM27S25
AxC11
|