PICOAMPERE DIODE Search Results

BAV45

Abstract: MBG530 "Logarithmic Amplifiers" sot18 picoampere diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES

BAV45

Abstract: MBG530
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current:

BAV45

Abstract: diode led ir PA 10 Diode
Contextual Info: BAV45 SILICON PICOAMPERE DIODE TO-18 CASE TWO LEADED DESCRIPTION The CENTRAL SEMICONDUCTOR BAV45 type is a Silicon Picoampere Diode, mounted in a hermetically sealed metal case, designed for extremely low leakage applications. MAXIMUM RATINGS (TA=25°C)

Contextual Info: BAV45 w w w. c e n t r a l s e m i . c o m SILICON PICOAMPERE DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAV45 is a silicon picoampere diode, mounted in a hermetically sealed metal case, designed for extremely low leakage applications. MARKING: FULL PART NUMBER

Contextual Info: ANALOG DEVICES Picoampere Input Current Bipolar Op Amp □ _AD705 1.1 Scope. This specification covers the detail requirements for a precision, low input current, low offset voltage, monolithic bipolar amplifier. 1.2 Part Number.

Contextual Info: ANALOG DEVICES Picoampere Input Current Bipolar Op Amp □ _ AD705 1.1 Scope. This specification covers the detail requirements for a precision, low input current, low offset voltage, monolithic bipolar amplifier. 1.2 Part Number.

BAV45

Abstract: CPD65
Contextual Info: PROCESS CPD65 Low Leakage Diode Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.5 X 9.5 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 2.5 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å

Contextual Info: Quad Picoampere Input Current, Precision, Bipolar OpAmp _AD704 ANALOG DEVICES □ 1.1 Scope. This specification covers the detail requirements for a quad precision, low input current, low offset volt­ age, monolithic bipolar amplifier.

Contextual Info: PROCESS CPD65 Low Leakage Diode Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11.8 x 11.8 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 2.35 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

BAV45

Abstract: CPD65
Contextual Info: PROCESS CPD65 Central Low Leakage Diode TM Semiconductor Corp. Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.5 X 9.5 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 2.5 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization

Contextual Info: ANALOG DEVICES bSE D • OfllbflOD D0 4 1 D 15 TEA IIBANA_ Picoampere Input _ Current Bipolar OpAmp AD705 ANALOG DEVICES INC \ 1.1 Scope. This specification covers the detail requirements for a precision, low input current, low offset voltage,

Contextual Info: _ LT1024 / t u i c a b TECHNOLOGY Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp FCHTURCS DCSCRIPTIOn • Guaranteed Offset Voltage 50fiM Max. ■ Guaranteed Bias Current 120pAMax. 25°C 700pAMax. -5 5 °C to 125°C 1.5/iV/°CMax.

Contextual Info: Picoampere Input Current Bipolar Op Amp ANALOG 1.1 Scope. This specification covers monolithic bipolar amplifier. 1.2 Part Number. The complete p an number per Table 1 of this specification is as follows: Device Part Number -1 AD705T/883B 1.2.3 Case Outline.

BAV45

Abstract: MBG530 J-10 MAM207
Contextual Info: Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO -18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive

AD704

Abstract: AD705 AD706 EIA-481A LT1024 OP07 ad7064
Contextual Info: a Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURE CONNECTION DIAGRAM HIGH DC PRECISION 50 ␮V max Offset Voltage 0.6 ␮V/؇C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages LOW NOISE

bifet differential

Abstract: "FET Input Amplifiers" AD706 sine wave inverter circuit diagram AD704 AD706JN AD706JR AD706KN EIA-481A LT1024
Contextual Info: a Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURE CONNECTION DIAGRAM HIGH DC PRECISION 50 ␮V max Offset Voltage 0.6 ␮V/؇C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N and Plastic SOIC (R) Packages AMPLIFIER 1 LOW NOISE

Contextual Info: , {Jnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO-18 can. It has an extremely low leakage current over

Contextual Info: ANALOG DEVICES Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURES CONNECTION DIAGRAM HIGH DC PRECISION 50 nV max Offset Voltage 0.6 n V /°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages

Contextual Info: LT1Q24 Dual, Matched Picoampere, Microvolt Input Low Noise Op Amp KfVTURCS D C SC R IPTIO fl • Guaranteed Offset Voltage 5QpV Max. ■ Guaranteed Bias Current 25°C 120pAMax. ~55°Cto125°C 700pA Max. 1.5^V/°CMax. ■ Guaranteed Drift ■ LowNoise,0.1Hzto10Hz

Contextual Info: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

LTC1024

Contextual Info: LT1024 Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ Guaranteed Offset Voltage: 50µV Max Guaranteed Bias Current: 25°C: 120pA Max –55°C to 125°C: 700pA Max Guaranteed Drift: 1.5µV/°C Max

022106-A

Abstract: E20A package AD704SE E20A 23POWER
Contextual Info: Quad Picoampere Input Current, Precision, Bipolar Op Amp AD704/883B 1.1 Scope. This specification covers the detail requirements for a quad precision, low input current, low offset voltage, monolithic bipolar amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:

Contextual Info: BACK a Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURE CONNECTION DIAGRAM HIGH DC PRECISION 50 ␮V max Offset Voltage 0.6 ␮V/؇C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages LOW NOISE

opo7

Abstract: "VICTOREEN" VICTOREEN resistor AD70ST VICTOREEN MOX B711 VICTOREEN resistor mox 3 VICTOREEN
Contextual Info: ., ~ W ANALOG Picoampere Input-Current BipolarUp Amp DEVICES I - -FEATURES DC PERFORMANCE 25 p,V max Offset Voltage AD705T 0.6 p,V1°Cmax Drift (AD705K/T) 100 pA max Input Bias Current (AD705K) 250 pA max 18Over MIL Temperature Range (AD705T) 114 dB min CMRR (AD705K/T)