Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3331 0032361 S4b • APX »*«*««*specification BGY580;BGY581 CATV amplifier modules N AP1ER PHILIPS/DISCRETE FEATURES PINNING - SOT115C • Excellent linearity • Extremely low noise PIN PIN CONFIGURATION DESCRIPTION 1 input • Silicon nitride passivation
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bbS3331
BGY580
BGY581
OT115C
BGY580
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988
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BF988
bbS3131
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • b b S S ^ l DD2b43fl T17 IAPX BB911 l VHF VARIABLE CAPACITANCE DIODE The BB911 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band A up to 160 MHz in all-band tuners.
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DD2b43fl
BB911
BB911
OD-68.
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Untitled
Abstract: No abstract text available
Text: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION
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BD433
BD437
BD439
BD441
BD435
O-126
BD434,
BD436,
BD438,
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Untitled
Abstract: No abstract text available
Text: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
001A7S1
BUS23
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
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transistor 667
Abstract: No abstract text available
Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2
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BFR93A
BFT93.
transistor 667
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Untitled
Abstract: No abstract text available
Text: I b^E ]> • bbSBSBl 0027524 2T0 I BC327 BC327A BC328 APX N AMER PHILIPS/DISCRETE _ y SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended fo r use in driver and output stages of audio amplifiers.
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BC327
BC327A
BC328
BC327,
BC327A,
BC328
BC337,
BC337A
BC338
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BD 669
Abstract: No abstract text available
Text: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.
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BDV66A;
BDV66C;
bbS3T31
0Q34A23
bbS3331
0034A24
BD 669
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bd234
Abstract: No abstract text available
Text: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,
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BD234;
BD236;
BD238
OT-32
BD233,
BD235
BD237.
BD234
BD236
bd234
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BD203
Abstract: bdx77
Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or
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BD201
BD203
BDX77
BD202,
BD204
O-220.
BD203
bdx77
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Untitled
Abstract: No abstract text available
Text: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
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BST70A
bb53331
D023T3A
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Untitled
Abstract: No abstract text available
Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53R31
00304bQ
BUK436-100A/B
BUK436
-100A
-100B
0Q304b4
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW77
28The
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Untitled
Abstract: No abstract text available
Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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BF966S
bbS3331
003ST36
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bot64
Abstract: No abstract text available
Text: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.
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BDT64F;
BDT64AF
BDT64BF;
BDT64CF
BDT65F,
BDT65AF,
BDT65CF.
BDT64F
003473b
bot64
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero
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bbS3T31^
DQ113T1
BYV43_
T-03-19
BYV43-40A,
DD114D5
BYV43SERIES
M1246
BYV43
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3^31 P D E ^ m b DEfl BLWbU b^E » APX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.
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BLW80
bbS3331
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k4368
Abstract: No abstract text available
Text: N AMFR P H IL IP S /D IS C R E T E b'lE D • b b S B 'm 0 0 3 0 4 7 Q flb? « A P X Product Specification Philips Semiconductors B U K436-800A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
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K436-800A/B
BUK436
-800A
-800B
BUK436-800A/B
bbS3331
DD3D474
k4368
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MRC223
Abstract: No abstract text available
Text: Philips Semiconductors • bb53T31 0023547 'Ifll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 b7E D -JT a HER PHILIPS/DISCRETE FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,
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bb53T31
BSP130
OT223
MRC223
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Untitled
Abstract: No abstract text available
Text: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
K436-200A/B
BUK436
-200A
-200B
BUK436-200A/B
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,
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002b314
BAV45
bbS3331
002b317
002b31fl
bbS3T31
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Untitled
Abstract: No abstract text available
Text: ^53=131 001A775 b • DEVELOPMENT DATA BUS132 SERIES This data sheet contains advance information and specifications are subject to change without notice. . T*- 3 3 - / 3 N AMER PHILIPS/] IS CRETE 2SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast
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001A775
BUS132
BUS132H
BUS132
T-33-13
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