PH-13 TRANSISTOR Search Results

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

0119A

Abstract: A3240 A3240ELH halleffect sensor
Contextual Info: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT CC 2 3 OUTPUT SUPPLY 1 GROUND V Dwg. PH-003-2 Pinning is shown viewed from branded side. Data Sheet 27621.20 3240 CHOPPER-STABILIZED, PRECISION

LMT2903N

Abstract: lmt2903 LMT393 LMT393D LM 2903 MOTOROLA LMT2903D T393 LM 797 T2903 LMT39
Contextual Info: Tö Lÿnh Mürphÿ Fréni Motorola Desìqn-NÉT Ph:602-244-659i Fäx:6Ö2-244-6693 797 13:55 MOTOROLA LMT393, LMT2903 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION DUAL SINGLE SUPPLY COMPARATORS □UAL COMPARATORS The LMT393family of comparators are dual independent voltage

0119A

Abstract: A3280 A3281 A3281ELH A3283 SC 3281
Contextual Info: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT 1 2 3 GROUND OUTPUT CC SUPPLY V Dwg. PH-003-2 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS at TA = +25°C Supply Voltage, VCC . 26.5 V

TRANSISTOR BD 338

Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
Contextual Info: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered

701T1

Abstract: 301t1
Contextual Info: 04/21/98 13:20 From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 To Lynn Murphy 8 f l ^ i T C ^ R O L A 02107 rutlni |.ill i l . r i n m i l SEMICONDUCTOR TECHNICAL DATA M M SD 101T1 M M SD 301T1 M M SD 701T1 SO D-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our

IH33

Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
Contextual Info: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O ­ STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

KTC4520

Abstract: TT-B-2
Contextual Info: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.

CI L200

Abstract: KTC4521
Contextual Info: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .

F40 marking

Abstract: KTC3882
Contextual Info: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C

Contextual Info: KRC407 — SEMICONDUCTOR KRC409 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: GaN POWER with UMS UMS State-of-the-Art Offer UMS launches its first family of state-of-the-art GaN power transistors: • High Power • High Efficiency • Thermally Optimized UMS GaN transistors are available in Flanged Packages. General Purpose Part Number

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

KTA2014E

Abstract: KTC4075E
Contextual Info: KTA2014E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : h F E 0 .1 m A /h F E (2 m A )= 0 .9 5 (T y p .). • Low Noise : NF=ldB(Typ.), 10dB(Max.).

kra102s equivalent

Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
Contextual Info: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: 2N2880 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package features a 180 degree lead orientation.

2n3749

Contextual Info: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to the JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.

TA 8644

Abstract: BFP690 SCT595 GMA marking
Contextual Info: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5
For medium power amplifiers
Maxim. available Gain Gma = 17 dB at 1.8 GHz 3
Gold metallization for high reliability 2
70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!

TIP31C

Abstract: TIP32C
Contextual Info: SEMICONDUCTOR TIP32C TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C. DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT -100 V CBO

marking r4s

Abstract: R4S BFP640 BFP640 BFP640 noise figure
Contextual Info: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications 1
Outstanding noise figure F = 0.65 dB at 1.8 GHz

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

R4S BFP640

Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz