D014717 Search Results

D014717 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUZ54 Contextual Info: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54	PDF
D1407 Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406 Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance	OCR Scan	BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406	PDF
D01471 Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam ic RAM high d e n sity m em ory m odule. The Sam sung	OCR Scan	M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471	PDF

Catalog Datasheet

Type

Document Tags

PDF

BUZ54

Contextual Info: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

OCR Scan

BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54

PDF

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

OCR Scan

BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406

PDF

D01471

Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam ic RAM high d e n sity m em ory m odule. The Sam sung

OCR Scan

M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471

PDF