pepi c
Abstract: MRF426
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.
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MRF426
pepi c
MRF426
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pepi c
Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
Text: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN
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V/100V/300V
pepi c
DM100
pepi
pepi N
HV100
HV300
ISO14000
DM-300
pepi b
PEPI N-1
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Untitled
Abstract: No abstract text available
Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro
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0D137Ã
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0.18 um CMOS parameters
Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors
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10-3/K]
0.18 um CMOS parameters
poly silicon resistor
pepi c
0.18 um CMOS technology
World transistors
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Untitled
Abstract: No abstract text available
Text: Process Introduction 1.5um BiCMOS Process Technology Process features Key Design Rules P substrate and P-epi Twin well LOCOS High performance bipolar devices Dual gate oxide available（optional） Low voltage CMOS 5V High voltage CMOS(30V)
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IBM Microelectronics
Abstract: PEPI
Text: September 2001 IBM Blue Logic CMOS 6RF Technology 0.25 µm CMOS technology for wireless applications Highlights • IBM proven CMOS technology with radio frequency RF , analog and mixed-signal enhancements, optimal for wireless applications • Low-conductivity substrate improves noise isolation
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Untitled
Abstract: No abstract text available
Text: SK10GD12T4ET 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 Absolute Maximum Ratings Symbol Conditions IGBT C:DL 3M F HI J: 6: 3M F OQI J: 6:RS .B'( OHPP C OQ ; 3' F QP J: OI ; H5 ; V HP C 3M F OIP J: OP [' 3' F HI J: OI ; 3' F QP J: OH ; H5 ; 6:RSF T U 6:%,+ C: F WPP CX C7D Y OI CX
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SK10GD12T4ET
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Ta75458p cross
Abstract: ta7545bp C12S TA75458F TA75458P
Text: BIPO LAR LIN EA R INTEGRATED CIRCUIT SILICON MONOLITHIC TA75458P/F DUAL OPERATIONAL AMPLIFIER . Pair of Internally Compensated High Performance Amplifier . No Frequency Compensation Required . No Latch-up Short Circuit Protection . Wide Common Mode and Differential Voltage Range
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TA75458P,
5458F
TA75458P
125-Q0
TA75458F
Ta75458p cross
ta7545bp
C12S
TA75458F
TA75458P
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130001 power transistor
Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
Text: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages
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MRF426
MRF426A
MRF426,
130001 power transistor
transistor 130001
K1746
pepi c
MRF426A
VK20Q
PEPI -CH
2204B
725M
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IDLN100D10
Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
Text: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]
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V/40V
IDLN100D10
ISO14000
100D10
pepi c
ISO-14000
VTN100D10
zarlink PACKING
50x-2
Zarlink CROSS
analog devices 0.8 -2.0um CMOS
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5HP ibm
Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
Text: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)
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07G522035300*
G522-0353-00
5HP ibm
5HP ibm SiGe HBT
sige hbt
germanium transistors NPN
IBM Microelectronics
Tech MOS Technology
Spiral Inductor technology
SiGe POWER TRANSISTOR
IBM SiGe
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PEPI N-1
Abstract: pepi c 0-21S SAFE33 VK20Q PEPI PEPI N
Text: ai ^ fcb 3b 72S 4 0070=103 1 89D 78983 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F D 3 7 - A* MOTOROLA SEM ICO NDUCTOR MRF426 MRF426A TECHNICAL DATA The RF Line 25 W P E P )- 3 0 M H z R F POW ER T R A N S IS T O R N PN S IL IC O N N P N S IL IC O N R F POW ER T R A N S IS T O R
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MRF426
MRF426A
MRF426,
PEPI N-1
pepi c
0-21S
SAFE33
VK20Q
PEPI
PEPI N
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MC 2882
Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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175MHÃ
MC 2882
2SC2862
MC 342 transistor
210B
MC 2871
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pepi c
Abstract: PEPI -CH pepi b
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA A dvance Inform ation AM R900-60A The RF Line Linear P o w e r A m p lifie r 30 W — 800-960 MHz LINEAR POW ER AMPLIFIER . . . specifically d e sig n e d for cellular radio cell en h ancer applications. T h is solid state,
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R900-60A
AMR900-60A
pepi c
PEPI -CH
pepi b
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MRF479
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 15 W PEP . 15 W (C W )— 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . d e s ig n e d p r im a r ily fo r u s e in s in g le s id e b a n d lin e a r a m p lifie r o u tp u t a p p lic a tio n s a n d o th e r c o m m u n ic a tio n s e q u ip m e n t o p e r
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MRF479
MRF479
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TD 6905 S
Abstract: ci 7430 TD 6905
Text: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >
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1000PF,
CJ6-J35=
350uH
SI-30103
TD 6905 S
ci 7430
TD 6905
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transistor KD 503
Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base
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MRF466
2N5941
transistor KD 503
kd 503 transistor
MRF466
MRF-466
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MRW53605
Abstract: pepi c MRW53505
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R W 53505 M R W 53605 The RF Line Microwave Linear Power Transistors 6 TO 7 dB 1-3 GHz 4 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . designed p rim a rily fo r large-signal o u tp u t and d riv e r a m p lifie r stages in th e 1 to 3
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TRW53505
MRW53505,
MRW53605
MRW53605
pepi c
MRW53505
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MRF477
Abstract: MRF477 equivalent mrf477 transistor 1N4719
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e 4 0 W PEP - 3 0 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r a p p lica tio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 MHz, in sin g le sideband m o bile, m arine
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O-220AB
MRF477
MRF477
MRF477 equivalent
mrf477 transistor
1N4719
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MRF429MP
Abstract: MRF429-MP MRF429 MRF-429
Text: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d
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MRF429
MRF429MP
MRF429,
MRF429MP
MRF429-MP
MRF-429
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MRF406
Abstract: MRF406 MOTOROLA 20WPEP
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)
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MRF406
MRF406
MRF406 MOTOROLA
20WPEP
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c237p
Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r
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harris 6616
Abstract: No abstract text available
Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02
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HC6616
1x106
1x109
1x101
24-Lead
HC6616/1
pin21
HC6616/2
harris 6616
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3B2S
Abstract: MRF428
Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power
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3b72S4
MRF428
T--33--13
3B2S
MRF428
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