PEP DRIVER Search Results

4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Contextual Info: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96

philips ferroxcube 4c6

Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook
Contextual Info: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS

8122 Tube

Abstract: BURLE-8122 8122 application note ERIE CAPACITORS CD77-030 Jettron Products TP-105 TP-118 TP-122 300 watts amplifier circuit diagram
Contextual Info: Return To Product Page 8122 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 380 Watts PEP Output at 30 MHz AB1 570 Watts PEP Output at 30 MHz AB2 300 Watts CW Output at 470 MHz

8122 Tube

Abstract: beam Tube BURLE-8122 8122 ERIE 9813-000 "Power Tube" diodes 8122 CD464-2 burle sk 3050 c
Contextual Info: 8122 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 380 Watts PEP Output at 30 MHz AB1 570 Watts PEP Output at 30 MHz AB2 Watts CW Output at 470 MHz Matched Pair Available BURLE-8122 is a very small, low-cost, forced-air-cooled beam

NTE338F

Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP

MRF426

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

NTE338F

Abstract: 20W power transistor
Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP

allen bradley CB series

Abstract: "class AB Linear" hf CB allen bradley
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear am plifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

"class AB Linear" hf

Abstract: allen bradley CC series Mrf426
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F426 The RF Line NPN Silicon RF P o w er Tran sisto r . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

MIL-STD-1311

Abstract: 300 watt hf transistor 12 volt HF SSB APPLICATIONS RF 28 v 300 watt beam Tube vhf linear pulse power amplifier TP-105 TP-118 Jettron Products
Contextual Info: Power Tube Linear Beam Power Amplifier Tube 1000 Watts Peak Sync Output in VHF Translator Service 265 Watt Average-Noise-Power Output with White Noise Loading 300 Watt Power Output in UHF-Linear Telephony Service Watts PEP Output in SSB Suppressed-Carrier Service

MRF426

Abstract: equivalent transistor rf "30 mhz"
Contextual Info: MRF426 The RF Line NPN Silicon Power Transistor 25W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 05202009 Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • • • • Product Image Specified 28 V, 30 MHz characteristics —

blx13

Abstract: 2204B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line N P N Silico n RF Pow er T ran sistor MRF426 . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

circuit diagram of door interlock system

Abstract: A 1266 Y1266 beam Tube spark gap TP-105 TP-117 TP-118 TP-122 thyratron
Contextual Info: 8794 Power Tube Linear Beam Power Tube - 3000 Watts Peak Sync in Translator Service - 10,000 Watts PEP Output in SSB Service - Full Input to 400 MHz The BURLE 8794 is intended specifically to meet the high linearity, high gain requirements of modern, reliable, SSB and

TIC 136 Transistor

Abstract: mrf475 tic 136 mrf475 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

ericsson 20151

Abstract: 9434 1198E bav 17 diode
Contextual Info: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

ericsson 20151

Contextual Info: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across 1.8 to 2.0 GHz frequency band. Rated at 45 watts minimum output power for PEP applications, it is

828 TRANSISTOR equivalent

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

4440 AMPLIFIER CIRCUIT

Abstract: 8877 tube TEM00 TP105 TP-105
Contextual Info: Return To Product Page 8891 Power Tube Beam Power Tube • • • • • 20.0 Kilowatt Peak Sync. Output Thru VHF-TV Band at 13 dB Gain 17.5 Kilowatt PEP Output for Single Sideband Service at 20 dB Gain Efficient Forced-Air Cooling Full Input to 400 MHz

DC100V

Abstract: MK715 resistive touch panel bolymin touch panels Bolymin
Contextual Info: BOLYMIN Touch Panel Description Touch panels are input devices that apply the film processing techologies the company has acquired while working on plastic film panels PEP . Since the keyboards themselves are transparent, the touch panels can be placed directly on top of a display device. They are space-saving,

dlc10

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
Contextual Info: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

AP602-F

Abstract: AP602 AP602-PCB1960 AP602-PCB2140 AP602-PCB900 JESD22-A114
Contextual Info: AP602 High Dynamic Range 4W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +35.7 dBm P1dB • -52 dBc ACLR @ ½W PAVG • -47 dBc IMD3 @ ½W PEP • 16% Efficiency @ ½W PAVG Functional Diagram The AP602 is a high dynamic range power amplifier in a