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    PDTC123EM Price and Stock

    Nexperia PDTC123EM,315

    TRANS PREBIAS NPN 50V SOT883
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    DigiKey PDTC123EM,315 Reel 20,000 10,000
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    PDTC123EM,315 Cut Tape 20,000 1
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    Mouser Electronics PDTC123EM,315 7,854
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    • 10 $0.102
    • 100 $0.055
    • 1000 $0.046
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    Verical PDTC123EM,315 30,000 14,493
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    PDTC123EM,315 20,000 207
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    Arrow Electronics PDTC123EM,315 20,000 1
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    Rochester Electronics PDTC123EM,315 40,000 1
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    TTI PDTC123EM,315 Reel 20,000
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    Avnet Silica PDTC123EM,315 8 Weeks 10,000
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    EBV Elektronik PDTC123EM,315 8 Weeks 10,000
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    Rochester Electronics LLC PDTC123EM,315

    TRANS PREBIAS
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    DigiKey PDTC123EM,315 Bulk 11,871
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    Rochester Electronics LLC PDTC123EMB,315

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    DigiKey PDTC123EMB,315 Bulk 11,225
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    Nexperia PDTC123EMB,315

    TRANS PREBIAS NPN 50V 0.1A 3DFN
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    DigiKey PDTC123EMB,315 Reel 10,000
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    Mouser Electronics PDTC123EMB,315
    • 1 $0.3
    • 10 $0.229
    • 100 $0.089
    • 1000 $0.052
    • 10000 $0.034
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    Verical PDTC123EMB,315 48,775 13,762
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    PDTC123EMB,315 30,000 13,762
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    Newark PDTC123EMB,315 Bulk 4,702 5
    • 1 $0.302
    • 10 $0.244
    • 100 $0.13
    • 1000 $0.058
    • 10000 $0.046
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    Rochester Electronics PDTC123EMB,315 78,775 1
    • 1 $0.0257
    • 10 $0.0257
    • 100 $0.0242
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    TTI PDTC123EMB,315 Reel 30,000
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    Avnet Silica PDTC123EMB,315 8 Weeks 10,000
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    EBV Elektronik PDTC123EMB,315 8 Weeks 10,000
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    Nexperia PDTC123EM315

    Trans Digital BJT NPN 50V 100mA 3-Pin DFN T/R - Tape and Reel (Alt: PDTC123EM,315)
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    Avnet Americas PDTC123EM315 Reel 6 Weeks 30,000
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    PDTC123EM Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTC123EM Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EM,315 NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd Original PDF
    PDTC123EMB NXP Semiconductors NPN resistor-equipped transistor; R1 = 2.2 kohm, R2 = 2.2 kOhm Original PDF
    PDTC123EMB,315 NXP Semiconductors PDTC123EMB - NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF
    PDTC123EMT/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF

    PDTC123EM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


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    PDF 2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


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    PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original
    PDF PDTC123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123E PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original
    PDF PDTC123E SCA76 R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75

    PDTA123EE

    Abstract: PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Apr 07 2004 Aug 02 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original
    PDF PDTA123E SCA76 R75/07/pp14 PDTA123EE PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


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    PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


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    PDF PDTC123E R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89

    PDTA123ET

    Abstract: PDTA123E PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original
    PDF PDTA123E SCA75 613514/04/pp12 PDTA123ET PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original
    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original
    PDF PDTA123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101

    PDTC113EU

    Abstract: PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20
    Text: Semiconductors Philips’ Resistor-Equipped Transistor RET portfolio Double Resistor-Equipped Transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Key features • Extensive range - 241 products already released - ~ 400 products will be available in 2004 • Single or dual RETs with large choice of resistor combinations


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    PDF OT457 SC-74) OT363 SC-88) OT666 MSE194 MSE193 PUMH15 PUMH11 PDTC113EU PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Apr 14 2003 Nov 26 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original
    PDF PDTA123E SCA75 R75/05/pp13 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    tda8510j 2.1 creative amplifiers

    Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
    Text: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������


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    PDF PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


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    PDF PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


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    PDF OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030

    PDTC123ES

    Abstract: PDTC123EE PDTC123ET PDTA123EE mhc506 sot883 PDTC123E PDTC123EEF PDTC123EK PDTC123EM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Nov 26 2004 Mar 18 Philips Semiconductors Product specification NPN resistor-equipped transistors;


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    PDF PDTC123E SCA76 R75/06/pp14 PDTC123ES PDTC123EE PDTC123ET PDTA123EE mhc506 sot883 PDTC123EEF PDTC123EK PDTC123EM

    biss 0001

    Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
    Text: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced


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    PDF Packag35 OT984 HXS0N12) OT985 HXS0N16) biss 0001 PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking

    PDTA123EE

    Abstract: SOT883 PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original
    PDF PDTA123E R75/07/pp14 PDTA123EE SOT883 PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


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    PDF PDTA123E PDTA123ET PDTC123ET PDTA123ET

    IP4223CZ6

    Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
    Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our


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    PDF OD882 OT883 PVR100AD-B12V PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF