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    PDTA123E Price and Stock

    Rochester Electronics LLC PDTA123EMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    DigiKey PDTA123EMB,315 Bulk 139,871 11,225
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    PDTA123EMB,315 Bulk 79,970 11,225
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    Rochester Electronics LLC PDTA123EM,315

    TRANS PREBIAS
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    DigiKey PDTA123EM,315 Bulk 129,976 11,871
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    Rochester Electronics LLC PDTA123EE,115

    TRANS PREBIAS PNP 50V 0.1A SC75
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    DigiKey PDTA123EE,115 Bulk 80,363 8,876
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    Nexperia PDTA123ETVL

    TRANS PREBIAS PNP TO236AB
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    DigiKey PDTA123ETVL Reel 10,000
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    Mouser Electronics PDTA123ETVL 16,469
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    Verical PDTA123ETVL 692,275 16,130
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    Newark PDTA123ETVL Cut Tape 8,145 5
    • 1 $0.135
    • 10 $0.081
    • 100 $0.051
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    Rochester Electronics PDTA123ETVL 692,275 1
    • 1 $0.0219
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    TTI PDTA123ETVL Reel 40,000
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    Avnet Silica PDTA123ETVL 10 Weeks 10,000
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    NXP Semiconductors PDTA123EE,115

    TRANS PREBIAS PNP 50V 0.1A SC75
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    DigiKey PDTA123EE,115 Digi-Reel 1
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    PDTA123EE,115 Cut Tape
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    Verical PDTA123EE,115 57,000 10,870
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    PDTA123EE,115 19,543 10,870
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    Rochester Electronics PDTA123EE,115 80,363 1
    • 1 $0.0325
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    • 100 $0.0306
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    Find more PDTA123E price and stock on Findchips.com

    PDTA123E Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTA123E Philips Semiconductors R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EE Philips Semiconductors PDTA123E series, PNP resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EE,115 NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd Original PDF
    PDTA123EEF Philips Semiconductors PDTA123E series, PNP resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EET/R NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EK Philips Semiconductors PDTA123E series, PNP resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EK Philips Semiconductors PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF
    PDTA123EK,115 NXP Semiconductors TRANS PNP 50V 100MA SOT346 Original PDF
    PDTA123EKT/R NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EM NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123EM Philips Semiconductors PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF
    PDTA123EM,315 NXP Semiconductors PDTA123 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, BIP General Purpose Small Signal Original PDF
    PDTA123EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2. kOhm Original PDF
    PDTA123EMB,315 NXP Semiconductors PDTA123EMB - PDTA123EMB - PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123ES Philips Semiconductors PDTA123E series, PNP resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTA123ES Philips Semiconductors PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF
    PDTA123ES,126 NXP Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 500MW TO92-3 Original PDF
    PDTA123ET NXP Semiconductors PDTA123ET - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm - Complement: PDTC123ET ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 2.2 kOhm; Polarity: PNP ; Ptot max: 250 mW; Resistor ratio: 2.2 ; VCEO max: 50 V Original PDF
    PDTA123ET Philips Semiconductors PNP resistor-equipped transistor Original PDF
    PDTA123ET Philips Semiconductors PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF

    PDTA123E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PDTA123ET

    Abstract: PDTC123ET marking code 10 sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES


    Original     		M3D088 PDTA123ET MAM100 115002/00/03/pp8 PDTA123ET PDTC123ET marking code 10 sot23 PDF

    PDTA123EE

    Abstract: PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Apr 07 2004 Aug 02 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDTA123E SCA76 R75/07/pp14 PDTA123EE PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89 PDF

    PDTA123ET

    Abstract: PDTA123E PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDTA123E SCA75 613514/04/pp12 PDTA123ET PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET PDF

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDTA123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Apr 14 2003 Nov 26 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDTA123E SCA75 R75/05/pp13 PDTA123EE PDTC123ET PDTC123EE PDTA123ET PDF

    MAM100

    Abstract: PDTC123ET PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor


    Original     		M3D088 PDTA123ET PDTC123ET. SCA60 115104/1200/02/pp8 MAM100 PDTC123ET PDF

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET


    Original     		M3D088 PDTA123ET PDTC123ET. SCA55 117047/1200/01/pp8 PDTC123ET PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    PDTA123EE

    Abstract: SOT883 PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDTA123E R75/07/pp14 PDTA123EE SOT883 PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 PDF

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDTA123E PDTA123ET PDTC123ET PDTA123ET PDF

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 18 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 k£2 each


    OCR Scan     		PDTA123ET PDTC123ET. 115002/00/03/pp8 PDTC123ET PDTA123ET PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    PDTA123EE

    Abstract: 5c pnp transistor PDTA123ET PDTA123E PDTA123ES PDTA123EU SC-75 SC-89 PDTA123EEF PDTA123EK
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Nov 26 2004 Apr 07 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDTA123E SCA76 R75/06/pp14 PDTA123EE 5c pnp transistor PDTA123ET PDTA123ES PDTA123EU SC-75 SC-89 PDTA123EEF PDTA123EK PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDTC123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 PDF

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123E PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDTC123E SCA76 R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDTC123E R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    PUMH20

    Abstract: PBLS4004Y PUMD30 PUMH14 PUMB15 PUMH30 PMD2001D PBLS4003D PUMH15 PUMD9
    Text: Automotive small-signal discretes solutions Drive the future with our innovative portfolio Automotive Simplifying design through increased functionality By delivering more functionality from individual products, we help to cut development times. With just a few small-signal discretes several


    Original     		PDF