PARAMETRI Search Results

15514

Contextual Info: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

si5429

Contextual Info: Si5429DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

si2366

Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

14093

Abstract: 75431
Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Product Brief 150mA EXTREMELY LOW NOISE LDO REGULATOR Description Parametric Table The AP2121 series are positive voltage regulator ICs designed by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit 5-pin products

A18 MARKING soic8

Contextual Info: Product Brief WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS Description AZ4559 Parametric Table The AZ4559 consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, excellent channel separation, wide range of

LA 7805

Abstract: 7805 TO252 AZ7805D-E1 AZ7805D 7805
Contextual Info: Product Brief 3-TERMINAL POSITIVE LINEAR REGULATORS Description AZ78XX Parametric Table The AZ78XX series are monolithic integrated circuits designed as fixed-voltage regulators for a wide variety of applications including local, on-card regulation. This series of regulators are complete with internal current

d5611

Abstract: CD4512BMS
Contextual Info: CD4512BMS CMOS Dual 4-Bit Latch December 1992 Features Pinout • High-Voltage Types 20-Volt Rating CD4512BMS TOP VIEW • 3-State Outputs • Standardized, Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • 5V, 10V, and 15V Parametric Ratings

2N7227

Abstract: SV400
Contextual Info: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated

Contextual Info: V C l / i i r O / 'U 5r/Vtnur 100K INTERFACE s ta n d a rd s p e c ific a tio n s b U P E H -3 0 0 K S E M IC O N D U C T O R DC characteristics for the 100K parametric limits listed below are guaranteed for the entire SUPFR-SOO/Oamily unless specified on

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

MGFC5212

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High

AC97

Abstract: STA304A STA500 TQFP44
Contextual Info: STA304A DIGITAL AUDIO PROCESSOR WITH MULTICHANNEL DDX PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ STA304AEND TO END DIGITAL AUDIO INTEGRATED SOLUTION • DSP Functions: - DIGITAL VOLUME CONTROL - SOFT MUTE - BASS and TREBLE - PARAMETRIC EQ PER CHANNEL

K 1358 fet transistor

Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.

HCF4007UB

Abstract: HCF4007UBEY HCF4007UBM1 HCF4007UM013TR
Contextual Info: HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER • ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns Typ. AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT

HCF4002B

Abstract: HCF4002BEY HCF4002BM1 HCF4002M013TR
Contextual Info: HCF4002B DUAL 4-INPUT NOR GATE • ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME : tPD = 50ns TYP. at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS