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    PA102FM Search Results

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    PA102FM Price and Stock

    Niko Semicondutor Co Ltd PA102FMG

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    Quest Components PA102FMG 11,102
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    PA102FMG 800
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    PA102FM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA102FM Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    PA102FMG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

    PA102FM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SEM 2004

    Abstract: SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FM Mode Field Effect Transistor Preliminary SOT-23 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PA102FM OT-23 Nov-02-2004 SEM 2004 SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem PDF

    sem 2005

    Abstract: PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A
    Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FMG Mode Field Effect Transistor Preliminary SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PA102FMG OT-23 Mar-25-2005 sem 2005 PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A PDF

    ELM33401CA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM33401CA-S •概要 ■特点 ELM33401CA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 85mΩ (Vgs=-10V) ·Rds(on) < 118mΩ (Vgs=-4.5V) ·Rds(on) < 215mΩ (Vgs=-2.5V)


    Original     		ELM33401CA-S PA102FMG OT-23 Mar-22-2006 ELM33401CA PDF

    RTL8103T

    Abstract: SC1U25V5KX-1GP 1SMB22AT3G-GP-U SC33P50V2JN-3GP FDV301N-NL-GP SRN75J-1-GP 33R2J-2-GP BAV99-4-GP wistron PSID_EC
    Text: 5 4 3 2 1 D D Berry IO Board Schematics Document Arrandale Intel PCH C C 2010-02-04 REV : A00 B B DY : Nopop Component WWAN : Pop for WWAN TP : Pop for Touch Panel <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C.


    Original     		4HH01 4NG-67-GP SPRING-68-GP 4W005 4CK01 RTL8103T SC1U25V5KX-1GP 1SMB22AT3G-GP-U SC33P50V2JN-3GP FDV301N-NL-GP SRN75J-1-GP 33R2J-2-GP BAV99-4-GP wistron PSID_EC PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)


    Original     		ELM33401CA-S ELM33401CA-S ModeELM33401CA-S PA102FMG OT-23 Mar-22-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM33401CA-S •概要 ■特長 ELM33401CA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-3A ・ Rds on < 85mΩ (Vgs=-10V) ・ Rds(on) < 118mΩ (Vgs=-4.5V)


    Original     		ELM33401CA-S PA102FMG OT-23 Mar-22-2006 PDF

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G PDF

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original     		512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)


    Original     		ELM33401CA-S ELM33401CA-S ModeELM33401CA-S PA102FMG OT-23 Mar-22-2006 PDF

    SCD01U50V2KX-1GP

    Abstract: RTL8103T ST220U6D3VDM WISTRON AMD SC1U25V5KX-1GP 1SMB22AT3G-GP-U SCD1U10V2KX-4GP 09697-SC 0R0603-PAD rtl8103
    Text: 5 4 3 2 1 D D Berry AMD IO Board Schematics Document 2010-02-24 C C REV : A00 DY : Nopop Component B B <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Date: 5 4 3 2 Document Number


    Original     		4HH01 09697-SC STF237R148H67-GP STF237R117H83-1-GP SPRING-67-GP SPRING-68-GP SCD01U50V2KX-1GP RTL8103T ST220U6D3VDM WISTRON AMD SC1U25V5KX-1GP 1SMB22AT3G-GP-U SCD1U10V2KX-4GP 0R0603-PAD rtl8103 PDF

    Nuvoton NPCE781

    Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
    Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010


    Original     		Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602 PDF