PA102FM Search Results

SEM 2004

Abstract: SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM PA102FM Mode Field Effect Transistor Preliminary SOT-23 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

sem 2005

Abstract: PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM PA102FMG Mode Field Effect Transistor Preliminary SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

ELM33401CA

Contextual Info: 单 P 沟道 MOSFET ELM33401CA-S •概要 ■特点 ELM33401CA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 85mΩ (Vgs=-10V) ·Rds(on) < 118mΩ (Vgs=-4.5V) ·Rds(on) < 215mΩ (Vgs=-2.5V)

RTL8103T

Abstract: SC1U25V5KX-1GP 1SMB22AT3G-GP-U SC33P50V2JN-3GP FDV301N-NL-GP SRN75J-1-GP 33R2J-2-GP BAV99-4-GP wistron PSID_EC
Contextual Info: 5 4 3 2 1 D D Berry IO Board Schematics Document Arrandale Intel PCH C C 2010-02-04 REV : A00 B B DY : Nopop Component WWAN : Pop for WWAN TP : Pop for Touch Panel <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C.

Contextual Info: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)

Contextual Info: シングル P チャンネル MOSFET ELM33401CA-S •概要 ■特長 ELM33401CA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-3A ・ Rds on < 85mΩ (Vgs=-10V) ・ Rds(on) < 118mΩ (Vgs=-4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

NPCE781BA0DX

Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
Contextual Info: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM

Contextual Info: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)

SCD01U50V2KX-1GP

Abstract: RTL8103T ST220U6D3VDM WISTRON AMD SC1U25V5KX-1GP 1SMB22AT3G-GP-U SCD1U10V2KX-4GP 09697-SC 0R0603-PAD rtl8103
Contextual Info: 5 4 3 2 1 D D Berry AMD IO Board Schematics Document 2010-02-24 C C REV : A00 DY : Nopop Component B B <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Date: 5 4 3 2 Document Number

Nuvoton NPCE781

Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
Contextual Info: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010