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MOSLEADER PA102FMG-ML Single P -20V -2.4A SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA102FMG-ML	Reel			200	1 - 10 - 100 - 1000 $0.03416 10000 $0.03122	Buy Now
Niko Semicondutor Co Ltd PA102FMG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	PA102FMG		13,878			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	PA102FMG		1,000		7	1 - 10 $0.75 100 $0.375 1000 $0.15 10000 $0.15	Buy Now
Quest Components	PA102FMG		11,102			1 $0.6 10 $0.6 100 $0.6 1000 $0.6 10000 $0.18	Buy Now
	PA102FMG		800			1 $1 10 $1 100 $0.3 1000 $0.2 10000 $0.2	Buy Now
Win Source Electronics	PA102FMG		30,700			1 - 10 - 100 - 1000 $0.059 10000 $0.039	Buy Now

PA102FMG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PA102FMG		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF

PA102FMG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sem 2005 Abstract: PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FMG Mode Field Effect Transistor Preliminary SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	PDF	PA102FMG OT-23 Mar-25-2005 sem 2005 PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A
ELM33401CA Abstract: No abstract text available Text: 单 P 沟道 MOSFET ELM33401CA-S •概要 ■特点 ELM33401CA-S 是 P 沟道低输入电容，低工作电压，低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 85mΩ (Vgs=-10V) ·Rds(on) < 118mΩ (Vgs=-4.5V) ·Rds(on) < 215mΩ (Vgs=-2.5V)	Original	PDF	ELM33401CA-S PA102FMG OT-23 Mar-22-2006 ELM33401CA
RTL8103T Abstract: SC1U25V5KX-1GP 1SMB22AT3G-GP-U SC33P50V2JN-3GP FDV301N-NL-GP SRN75J-1-GP 33R2J-2-GP BAV99-4-GP wistron PSID_EC Text: 5 4 3 2 1 D D Berry IO Board Schematics Document Arrandale Intel PCH C C 2010-02-04 REV : A00 B B DY : Nopop Component WWAN : Pop for WWAN TP : Pop for Touch Panel <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C.	Original	PDF	4HH01 4NG-67-GP SPRING-68-GP 4W005 4CK01 RTL8103T SC1U25V5KX-1GP 1SMB22AT3G-GP-U SC33P50V2JN-3GP FDV301N-NL-GP SRN75J-1-GP 33R2J-2-GP BAV99-4-GP wistron PSID_EC
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)	Original	PDF	ELM33401CA-S ELM33401CA-S ModeELM33401CA-S PA102FMG OT-23 Mar-22-2006
Untitled Abstract: No abstract text available Text: シングル P チャンネル MOSFET ELM33401CA-S •概要 ■特長 ELM33401CA-S は低入力容量低電圧駆動、低・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-3A ・ Rds on < 85mΩ (Vgs=-10V) ・ Rds(on) < 118mΩ (Vgs=-4.5V)	Original	PDF	ELM33401CA-S PA102FMG OT-23 Mar-22-2006
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
NPCE781BA0DX Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM	Original	PDF	512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM33401CA-S •General description ■Features ELM33401CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)	Original	PDF	ELM33401CA-S ELM33401CA-S ModeELM33401CA-S PA102FMG OT-23 Mar-22-2006
SCD01U50V2KX-1GP Abstract: RTL8103T ST220U6D3VDM WISTRON AMD SC1U25V5KX-1GP 1SMB22AT3G-GP-U SCD1U10V2KX-4GP 09697-SC 0R0603-PAD rtl8103 Text: 5 4 3 2 1 D D Berry AMD IO Board Schematics Document 2010-02-24 C C REV : A00 DY : Nopop Component B B <Core Design> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Date: 5 4 3 2 Document Number	Original	PDF	4HH01 09697-SC STF237R148H67-GP STF237R117H83-1-GP SPRING-67-GP SPRING-68-GP SCD01U50V2KX-1GP RTL8103T ST220U6D3VDM WISTRON AMD SC1U25V5KX-1GP 1SMB22AT3G-GP-U SCD1U10V2KX-4GP 0R0603-PAD rtl8103
Nuvoton NPCE781 Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602 Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010	Original	PDF	Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602