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    P221E Search Results

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    P221E Price and Stock

    CTS Corporation MP221-E

    CRYSTAL 22.1184MHZ 20PF TH
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    DigiKey MP221-E Bulk 1,000
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    • 1000 $0.56132
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    Avnet Americas MP221-E Bulk 8 Weeks 1,000
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    • 1000 $0.48018
    • 10000 $0.33885
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    Mouser Electronics MP221-E
    • 1 $0.82
    • 10 $0.731
    • 100 $0.604
    • 1000 $0.476
    • 10000 $0.429
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    Richardson RFPD MP221-E 1,000
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    • 10000 $0.33
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    Avnet Abacus MP221-E 10 Weeks 1,000
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    Panasonic Electronic Components ECO-S2WP221EA

    CAP ALUM 220UF 20% 450V SNAP TH
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    DigiKey ECO-S2WP221EA Bulk
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    Master Electronics ECO-S2WP221EA 355
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    • 1000 $2.755
    • 10000 $2.444
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    Panasonic Electronic Components ECO-S2HP221EA

    CAP ALUM 220UF 20% 500V SNAP TH
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    DigiKey ECO-S2HP221EA Bulk
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    Delta Electronics Inc 0603HP-221EJTS

    FIXED IND 220NH 280MA 2 OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0603HP-221EJTS Reel 4,000
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    Delta Electronics Inc 0603HP-221EGTS

    FIXED IND 220NH 280MA 2 OHM SMD
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    DigiKey 0603HP-221EGTS Reel 4,000
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    Find more P221E price and stock on Findchips.com

    P221E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PDF

    LM7805 smd

    Abstract: LM7805 smd transistor marking C14
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency


    Original     		PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14 PDF

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1 PDF

    LM7805 M SMD

    Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v PDF

    LM7805 smd

    Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds PDF

    LM7805 M SMD

    Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt LM7805 M SMD LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 TPSE106K050R0400 PDF

    P121D

    Abstract: P221D P122D P223D P152D 5600 MF CAPACITOR 250v P331D P123D P822D P122EA
    Text: Aluminum Electrolytic Capacitors Large Can Type TS-UP Series TS-UP Series Features • Compact size & for general purpose 20 ~ 40% less volume than TS-U series ■ Various case size & wide CV value range ■ Top vent construction Specifications Performance Characteristics


    OCR Scan     		68000nF 120Hz, 22x50 25x40 30x30 25x45 30x35 35x25 25x50 30x40 P121D P221D P122D P223D P152D 5600 MF CAPACITOR 250v P331D P123D P822D P122EA PDF