dk52
Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320
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DS1302)
DS1302
DS21S07A
dk52
P-15782
DK53
P15890
P-16795
148259
p16038
P-17201
C19517
P-15837
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NE5510279A
Abstract: NE5510279A-T1
Text: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate
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NE5510279A
NE5510279A
NE5510279A-T1
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NE5500179A
Abstract: ldmos nec
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5500179A
NE5500179A
ldmos nec
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nec 1678
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5500479A
NE5500479A
nec 1678
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p15890
Abstract: P-16044 CARSEM
Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320
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DS1302)
Mar-96
Jan-95
Mar-95
May-95
Jul-95
Sep-95
Dec-95
p15890
P-16044
CARSEM
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P2624
Abstract: 12-24 volt power cord HW-64
Text: ACCESSORIES ADAPTERS – 19” TO 24” VERTICAL CABINETS, OPTIMA 19” INSTRUMENT CASES SPECIFY COLOR Used to install 19” panel width blowers, fan, and grille/filter assemblies in 24” panel width enclosures. Adapters are non-structural, and blower must be supported at rear.
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WS-021920
WS-022420
WS-021924
WS-022424
WS-021930
WS-022430
P2624
12-24 volt power cord
HW-64
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J1587
Abstract: FM24653 ISO-14001 samsung appl ISO7816 smart card samsung lcd inverter pinout
Text: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
J1587
FM24653
ISO-14001
samsung appl
ISO7816 smart card
samsung lcd inverter pinout
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NE5510179A
Abstract: NE5510179A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5510179A
NE5510179A
NE5510179A-T1
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ST191
Abstract: sof11
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR July 2009 Revision 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
ST191
sof11
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Untitled
Abstract: No abstract text available
Text: DDR2 128Mb SDRAM Preliminary Nanya Technology Corp. NT5TU8M16AG Specifications and functions are not finalized!! NT5TU8M16AG Commercial and Industrial DDR2 128Mb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Auto Refresh and Self Refresh Modes
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128Mb
NT5TU8M16AG
NT5TU8M16AG
JESD79-2F.
256Mb
JESD79-2F
105ns)
NTC-DDR2-256Mb-B-R1
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P1653
Abstract: P15890 dallas date code ds12887
Text: RELIABILITY MONITOR SUMMARY DATA STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320
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DS1302)
Mar-96
Jan-95
Mar-95
May-95
Jul-95
Sep-95
Dec-95
P1653
P15890
dallas date code ds12887
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p15890
Abstract: P-16100 P-15830 P-15890 p1565 DK53 dk52 C19517 P1537 P-16400
Text: RELIABILITY MONITOR SUMMARY DATA STRESS: PRODUCT DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS80320 DS80320 Burn-in 125°C, 7.0 V. 6.0 V. DS1302 MONITOR DATE JOB NO. Mar-95 May-95 Jul-95 Sep-95
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Mar-95
May-95
Jul-95
Sep-95
Nov-95
Jan-95
p15890
P-16100
P-15830
P-15890
p1565
DK53
dk52
C19517
P1537
P-16400
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S3F4A2F
Abstract: st stt 128 FM24653 ISO-14001 J1587 P873 p029
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
S3F4A2F
st stt 128
FM24653
ISO-14001
J1587
P873
p029
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NE5510279A
Abstract: NE5510279A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510279A
NE5510279A
NE5510279A-T1
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SDC MMC
Abstract: BU6554GVW 240x320 Color LCD 39 pin "DC Drive" motor control IRIS
Text: For Home Electronics and Security Devices Camera Image Processor Series Camera Image Processor with Built-in Camera DSP BU6554GVW No.09061EBT01 ●Description BU6554GVW is a camera image processor with internal camera DSP. Integrated camera DSP results in detailed, high-resolution imaging, making it ideal for commercial camera systems.
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BU6554GVW
09061EBT01
BU6554GVW
R0039A
SDC MMC
240x320 Color LCD 39 pin
"DC Drive" motor control IRIS
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Untitled
Abstract: No abstract text available
Text: For Home Electronics and Security Devices Camera Image Processor Series Camera Image Processor with Built-in Camera DSP BU6554GVW No.09061EBT01 ●Description BU6554GVW is a camera image processor with internal camera DSP. Integrated camera DSP results in detailed, high-resolution imaging, making it ideal for commercial camera systems.
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BU6554GVW
09061EBT01
BU6554GVW
R0039A
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NE5510379A
Abstract: NE5510379A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510379A
NE5510379A
NE5510379A-T1
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NEC D 809 F
Abstract: NE5510179A-T1 VP215 NE5510179A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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iC-lg
Abstract: MSM80C86A-10RS -7 80C85AH
Text: O K I Semiconductor MSM80C86A-1ORS/GS/JS 16-Bit C M O S M ICROPROCESSOR G E N E R A L D ESCR IPTIO N The MSM80C86A-10is com plete 16-bit CPUs im plem ented in Silicon Gate CMOS technology. They are designed w ith sam e processing speed as the NM OS 8086-1 b u t have considerably less pow er
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MSM80C86A-1ORS/GS/JS
16-Bit
MSM80C86A-10is
-10softw
14-word
24-Operand
iC-lg
MSM80C86A-10RS -7
80C85AH
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Untitled
Abstract: No abstract text available
Text: 16 15 14 13 12 11 10 S A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS ZONE DATE 5T6 REV N/P CHG MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS
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09JA03
01AU06
P1519O20
Ml574028
C42500
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8772 P
Abstract: ML-8772 machlett 8772 Raytheon Company NATIONAL ELECTRONIC TUBE company thyratron radar tube ML-8773 machlett x-ray tube
Text: The M a c h l e t t L a b o r a t o r i e s , In c . * 1 063 Hope S tr e e t Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 DESCRIPTION The ML-8772 and M L-8773 are triodes which are rated to operate as switch tubes in hard-tube pulse modulators for
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ML-8772
ML-8773
ML-8773
ST-2417
8772 P
machlett
8772
Raytheon Company
NATIONAL ELECTRONIC TUBE company
thyratron
radar tube
machlett x-ray tube
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Untitled
Abstract: No abstract text available
Text: 16 15 14 13 12 11 s 10 S SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER M MISSING NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 7 LAST NO. USED 8 DWG STATUS DATE 22MR99 5T6 REV N/P CHG
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22MR99
11DE02
24MY06
12AP99
5M-1994
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Untitled
Abstract: No abstract text available
Text: 24 23 22 19 20 21 17 IB 16 15 13 14 11 12 V 10 8 7 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M K • - f J V_l V f w w ^ 4. 4» w CD 7 A * A T A y A T A T ~
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07N001
Z1JA02
02MR99
16AP99
07-Mar-07
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Untitled
Abstract: No abstract text available
Text: 16 15 14 13 12 11 s 10 S SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M MISSING NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 5 LAST NO. USED 8 DWG STATUS
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10JN05
22JN05
23JN05
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