P1519 Search Results

dk52

Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

NE5510279A

Abstract: NE5510279A-T1
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate

NE5500179A

Abstract: ldmos nec
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

nec 1678

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

p15890

Abstract: P-16044 CARSEM
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

P2624

Abstract: 12-24 volt power cord HW-64
Contextual Info: ACCESSORIES ADAPTERS – 19” TO 24” VERTICAL CABINETS, OPTIMA 19” INSTRUMENT CASES SPECIFY COLOR Used to install 19” panel width blowers, fan, and grille/filter assemblies in 24” panel width enclosures. Adapters are non-structural, and blower must be supported at rear.

J1587

Abstract: FM24653 ISO-14001 samsung appl ISO7816 smart card samsung lcd inverter pinout
Contextual Info: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

NE5510179A

Abstract: NE5510179A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

iC-lg

Abstract: MSM80C86A-10RS -7 80C85AH
Contextual Info: O K I Semiconductor MSM80C86A-1ORS/GS/JS 16-Bit C M O S M ICROPROCESSOR G E N E R A L D ESCR IPTIO N The MSM80C86A-10is com plete 16-bit CPUs im plem ented in Silicon Gate CMOS technology. They are designed w ith sam e processing speed as the NM OS 8086-1 b u t have considerably less pow er

ST191

Abstract: sof11
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR July 2009 Revision 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

Contextual Info: DDR2 128Mb SDRAM Preliminary Nanya Technology Corp. NT5TU8M16AG Specifications and functions are not finalized!! NT5TU8M16AG Commercial and Industrial DDR2 128Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Auto Refresh and Self Refresh Modes

P1653

Abstract: P15890 dallas date code ds12887
Contextual Info: RELIABILITY MONITOR SUMMARY DATA STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320

p15890

Abstract: P-16100 P-15830 P-15890 p1565 DK53 dk52 C19517 P1537 P-16400
Contextual Info: RELIABILITY MONITOR SUMMARY DATA STRESS: PRODUCT DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS80320 DS80320 Burn-in 125°C, 7.0 V. 6.0 V. DS1302 MONITOR DATE JOB NO. Mar-95 May-95 Jul-95 Sep-95

S3F4A2F

Abstract: st stt 128 FM24653 ISO-14001 J1587 P873 p029
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

SDC MMC

Abstract: SDDAT03 camera module
Contextual Info: For Home Electronics and Security Devices Camera Image Processor Series Camera Image Processor with Built-in Camera DSP BU6554GVW ●Description BU6554GVW is a camera image processor with internal camera DSP. Integrated camera DSP results in detailed, high-resolution imaging, making it ideal for commercial camera systems.

SDC MMC

Abstract: BU6554GVW 240x320 Color LCD 39 pin "DC Drive" motor control IRIS
Contextual Info: For Home Electronics and Security Devices Camera Image Processor Series Camera Image Processor with Built-in Camera DSP BU6554GVW No.09061EBT01 ●Description BU6554GVW is a camera image processor with internal camera DSP. Integrated camera DSP results in detailed, high-resolution imaging, making it ideal for commercial camera systems.

Contextual Info: 16 15 14 13 12 11 10 S A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS ZONE DATE 5T6 REV N/P CHG MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS

8772 P

Abstract: ML-8772 machlett 8772 Raytheon Company NATIONAL ELECTRONIC TUBE company thyratron radar tube ML-8773 machlett x-ray tube
Contextual Info: The M a c h l e t t L a b o r a t o r i e s , In c . * 1 063 Hope S tr e e t Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 DESCRIPTION The ML-8772 and M L-8773 are triodes which are rated to operate as switch tubes in hard-tube pulse modulators for

Contextual Info: For Home Electronics and Security Devices Camera Image Processor Series Camera Image Processor with Built-in Camera DSP BU6554GVW No.09061EBT01 ●Description BU6554GVW is a camera image processor with internal camera DSP. Integrated camera DSP results in detailed, high-resolution imaging, making it ideal for commercial camera systems.

NE5510379A

Abstract: NE5510379A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NEC D 809 F

Abstract: NE5510179A-T1 VP215 NE5510179A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 16 15 14 13 12 11 s 10 S SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER M MISSING NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 7 LAST NO. USED 8 DWG STATUS DATE 22MR99 5T6 REV N/P CHG

Contextual Info: 24 23 22 19 20 21 17 IB 16 15 13 14 11 12 V 10 8 7 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M K • - f J V_l V f w w ^ 4. 4» w CD 7 A * A T A y A T A T ~

Contextual Info: 16 15 14 13 12 11 s 10 S SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M MISSING NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 5 LAST NO. USED 8 DWG STATUS