p-CHANNEL POWER MOSFET 600v
Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take
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-600v
-150V
p-CHANNEL POWER MOSFET 600v
IXTH20P50P
IXTP28P065T
014 IR MOSFET Transistor
P channel MOSFET 10A
ixtq
IXTA36P15P
IXTA76P10T
IXTH16P60P
IXTK32P60P
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circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The
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new/fdc6901l
FDC6901L
FDJ129P
Power247TM,
circuit diagram of mosfet based smps power supply
FSD210 8-pin
6 PIN smps control ic FOR LED DRIVER
SMPS MOSFET
3 phase smps circuit diagram using mosfet
FQP2N60C
1000V P-channel MOSFET
equivalent fsd210
FQPF1N60C
600V 2A MOSFET N-channel
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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6N60-P
O-220F
O-220
6N60-P
O-220F1
O-220F2
O-263
O-251
O-252
QW-R502-969
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NF925
Abstract: ISOPLUS247
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR32P60P VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
NF925
ISOPLUS247
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ISOPLUS247
Abstract: 16P60P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
ISOPLUS247
16P60P
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SVDF8N60F
Abstract: 8N60
Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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O-220
01-Apr-2011
O-220
O-220F
O-220F
47MAX
75MAX
SVDF8N60F
8N60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings
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IXTN32P60P
OT-227
E153432
2500ias
100ms
32P60P
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IXTK32P60P
Abstract: IXTX32P60P PLUS247 NF925
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTK32P60P IXTX32P60P VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V
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IXTK32P60P
IXTX32P60P
O-264
120/rating
100ms
32P60P
IXTK32P60P
IXTX32P60P
PLUS247
NF925
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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AP4002P
Abstract: No abstract text available
Text: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristics Simple Drive Requirement G 600V RDS ON 5 ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4002S/P
O-263
AP4002P)
O-220
O-220
4002P
AP4002P
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4n60f
Abstract: 4N60P
Text: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-251)
O-252)
O-251
O-252
O-252
13-Apr-2011
4n60f
4N60P
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P-Channel MOSFET 600v
Abstract: ISOPLUS247 nf 931 diode 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: IXTR32P60P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
3-25-09-D
P-Channel MOSFET 600v
ISOPLUS247
nf 931 diode
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTR32P60P RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
3-25-09-D
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTR16P60P RDS on = - 600V = - 10A ≤ Ω 790mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
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P-Channel MOSFET 600v
Abstract: 16P60P ISOPLUS247
Text: PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
P-Channel MOSFET 600v
16P60P
ISOPLUS247
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marking codes transistors SSs
Abstract: AP4002 4002p tr marking code l5 AP4002P PDTC* MARKING CODE 07
Text: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G BVDSS 600V RDS ON 5Ω ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4002S/P
O-263
AP4002P)
O-220
O-220
4002P
marking codes transistors SSs
AP4002
4002p
tr marking code l5
AP4002P
PDTC* MARKING CODE 07
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Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTH16P60P IXTT16P60P = = ≤ RDS on - 600V - 16A Ω 720mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH16P60P
IXTT16P60P
O-268
100ms
16P60P
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IXTX32P60P
Abstract: IXTK32P60P PLUS247
Text: IXTK32P60P IXTX32P60P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTK32P60P
IXTX32P60P
O-264
100ms
32P60P
5-09-A
IXTX32P60P
IXTK32P60P
PLUS247
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTK32P60P IXTX32P60P = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTK32P60P
IXTX32P60P
O-264
100ms
32P60P
5-09-A
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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IXTH16P60P
Abstract: IXTT16P60P
Text: IXTH16P60P IXTT16P60P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 600V - 16A Ω 720mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH16P60P
IXTT16P60P
O-268
100ms
16P60P
IXTH16P60P
IXTT16P60P
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14n60
Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P
Text: IXTA14N60P IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA14N60P
IXTP14N60P
IXTQ14N60P
O-263
O-220
062ombs
IXTA14N60P
14N60P
14n60
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IXTP14N60P
IXTQ14N60P
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LT 220 diode
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY MIE D • QESTIOS GGOOSIS 7bT M A V P AD VAN CED P O W E R .[ t - 3pi-i s Te c h n o lo g y A P T 6017AFN A P T5 5 1 7 AFN 600V 3 9 .0A 0.17 ijj 550V 3 9 .0 A 0.17 ijj POWER MQS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET%
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APT5517AFN
APT6017AFN
IL-STD-750
LT 220 diode
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