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    P 20N60 Search Results

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    P 20N60 Price and Stock

    onsemi FCP20N60

    MOSFET N-CH 600V 20A TO220-3
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    DigiKey FCP20N60 Tube 6,207 1
    • 1 $6.03
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    Avnet Americas FCP20N60 Tube 2,000 16 Weeks 50
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    FCP20N60 Bulk 7 Weeks, 5 Days 1
    • 1 $3.02
    • 10 $4.08
    • 100 $3.27
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    Mouser Electronics FCP20N60 671
    • 1 $5.14
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    Newark FCP20N60 Bulk 500 50
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    FCP20N60 Bulk 91 1
    • 1 $3.28
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    • 1000 $2.81
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    TME FCP20N60 34 1
    • 1 $5.88
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    ComSIT USA FCP20N60 13
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    Richardson RFPD FCP20N60 1,000
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    Avnet Silica FCP20N60 950 17 Weeks 50
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    EBV Elektronik FCP20N60 18 Weeks 50
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    New Advantage Corporation FCP20N60 150 1
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    Wuhan P&S FCP20N60 4,044 1
    • 1 $6.85
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    • 100 $4.37
    • 1000 $3.32
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    Infineon Technologies AG SPP20N60C3XKSA1

    MOSFET N-CH 600V 20.7A TO220-3
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    DigiKey SPP20N60C3XKSA1 Tube 3,728 1
    • 1 $4.91
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    • 1000 $1.86089
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    Avnet Americas SPP20N60C3XKSA1 Bulk 16 Weeks, 5 Days 1
    • 1 $4.31
    • 10 $4.16
    • 100 $2.59
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    Newark SPP20N60C3XKSA1 Bulk 6,664 1
    • 1 $4.31
    • 10 $4.16
    • 100 $2.59
    • 1000 $2.56
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    Rochester Electronics SPP20N60C3XKSA1 87,154 1
    • 1 $1.96
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    • 100 $1.84
    • 1000 $1.67
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    EBV Elektronik SPP20N60C3XKSA1 308,500 16 Weeks 500
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    New Advantage Corporation SPP20N60C3XKSA1 247,000 1
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    Win Source Electronics SPP20N60C3XKSA1 14,020
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    • 100 $1.4648
    • 1000 $1.1902
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    Infineon Technologies AG IKP20N60TXKSA1

    IGBT TRENCH FS 600V 40A TO220-3
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    DigiKey IKP20N60TXKSA1 Tube 1,570 1
    • 1 $3.35
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    • 1000 $1.14386
    • 10000 $1.06562
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    Newark IKP20N60TXKSA1 Bulk 1
    • 1 $2.75
    • 10 $1.55
    • 100 $1.42
    • 1000 $1.1
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    Rochester Electronics IKP20N60TXKSA1 180 1
    • 1 $1.18
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    TME IKP20N60TXKSA1 73 1
    • 1 $2.29
    • 10 $1.91
    • 100 $1.53
    • 1000 $1.5
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    Chip One Stop IKP20N60TXKSA1 Tube 1,496
    • 1 $2.51
    • 10 $1.26
    • 100 $1.04
    • 1000 $0.982
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    EBV Elektronik IKP20N60TXKSA1 20 Weeks 500
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    New Advantage Corporation IKP20N60TXKSA1 3,613 1
    • 1 $3.15
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    Win Source Electronics IKP20N60TXKSA1 2,001
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    Infineon Technologies AG SPP20N60S5

    MOSFET N-CH 650V 20A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP20N60S5 Tube 500
    • 1 -
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    • 1000 $2.12718
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    TME SPP20N60S5 47 1
    • 1 $7.2
    • 10 $5.75
    • 100 $5.18
    • 1000 $4.83
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    ComSIT USA SPP20N60S5 633
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    onsemi FCP20N60FS

    MOSFET N-CH 600V 20A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCP20N60FS Tube 1,000
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    • 1000 $2.41625
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    Find more P 20N60 price and stock on Findchips.com

    P 20N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    20N60 equivalent

    Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
    Text: [ /Title HGT G20N6 0C3R, P 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS T UCT ROD RODUC P E P T E


    Original     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS G20N6 20N60 S20N6 20N60 equivalent 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60 PDF

    20N60C3

    Abstract: Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPI20N60C3
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31 P-TO262-3-1


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Text: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 PDF

    20n60s5

    Abstract: 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5
    Text: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5 PDF

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Text: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor PDF

    20N60C3DR

    Abstract: g20n60c3d 20n60c3
    Text: [ /Title HGT G20N6 0C3D R /Subject (40A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0C3D ES N6 SIBL HGTG20 S O


    Original     		HGTG20 HGTG20N60C3DR G20N6 20N60C3DR g20n60c3d 20n60c3 PDF

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 PDF

    20N60C3

    Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3 PDF

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3 PDF

    SPW20N60C3

    Abstract: transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3 PDF

    20N60C3

    Abstract: Q67040-S4550
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 SPA20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 PDF

    20N60C3

    Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60
    Text: Final data SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60 PDF

    20n60s

    Abstract: No abstract text available
    Text: SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s PDF

    SPW20N60S5

    Abstract: No abstract text available
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5 PDF

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    20n60cfd

    Abstract: SPP20N60CFD 20n60c
    Text: SPP20N60CFD Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP20N60CFD P-TO220-3-1 Q67040-S4616 20N60CFD 20n60cfd SPP20N60CFD 20n60c PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF

    SGW20N60RUF

    Abstract: No abstract text available
    Text: SGW 20N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW20N60RUF SGW20N60RUF PDF

    20N60D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7


    OCR Scan     		MGW20N60D/D 20N60D PDF

    30n60

    Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
    Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient


    OCR Scan     		20N60BU1 100ns O-247 PDF