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P 20N60 Price and Stock

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Infineon Technologies AG IKP20N60TXKSA1 IGBT TRENCH FS 600V 40A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKP20N60TXKSA1	Tube	2,812		1	1 $3.23 10 $3.23 100 $1.4575 1000 $1.09468 10000 $1.01238	Buy Now
Avnet Americas	IKP20N60TXKSA1	Tube		19 Weeks	500	1 - 10 - 100 - 1000 $1.12576 10000 $1.12576	Buy Now
Newark	IKP20N60TXKSA1	Bulk	945		1	1 $2.96 10 $1.56 100 $1.42 1000 $1.06 10000 $1.06	Buy Now
Rochester Electronics	IKP20N60TXKSA1		180		1	1 - 10 - 100 $1.38 1000 $1.14 10000 $1.02	Buy Now
TME	IKP20N60TXKSA1		73		1	1 $2.29 10 $1.91 100 $1.53 1000 $1.5 10000 $1.5	Buy Now

Chip One Stop	IKP20N60TXKSA1	Tube	1,496	0 Weeks, 1 Days	1	1 $3.24 10 $2.9 100 $1.57 1000 $1.13 10000 $1.01	Buy Now
EBV Elektronik	IKP20N60TXKSA1			20 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IKP20N60TXKSA1		3,613		1	1 $3.15 10 $3.15 100 $3.15 1000 $3.15 10000 $3.15	Buy Now
Vyrian	IKP20N60TXKSA1		564			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IKP20N60TXKSA1		8,499			1 - 10 - 100 $2.8826 1000 $2.4983 10000 $2.4983	Buy Now
Infineon Technologies AG SPP20N60S5XKSA1 HIGH POWER_LEGACY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP20N60S5XKSA1	Tube	1,795		1	1 $4.79 10 $4.79 100 $2.2642 1000 $1.80199 10000 $1.80199	Buy Now
Avnet Americas	SPP20N60S5XKSA1	Tube		15 Weeks	50	1 - 10 - 100 $1.70368 1000 $1.6192 10000 $1.6192	Buy Now
Bristol Electronics	SPP20N60S5XKSA1		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SPP20N60S5XKSA1		156		1	1 - 10 - 100 $1.76 1000 $1.57 10000 $1.48	Buy Now
EBV Elektronik	SPP20N60S5XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Vyrian	SPP20N60S5XKSA1		1,619			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP20N60S5XKSA1		1,040			1 - 10 $6.2562 100 $4.1709 1000 $4.1709 10000 $4.1709	Buy Now
Infineon Technologies AG SPP20N60C3XKSA1 MOSFET N-CH 600V 20.7A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP20N60C3XKSA1	Tube	1,627		1	1 $3.8 10 $3.8 100 $2.156 1000 $1.648 10000 $1.648	Buy Now
Avnet Americas ()	SPP20N60C3XKSA1	Tube	26,426	15 Weeks	1	1 $1.17383 10 $1.17383 100 $1.17383 1000 $1.17383 10000 $1.17383	Buy Now
	SPP20N60C3XKSA1	Bulk		16 Weeks, 5 Days	1	1 $4.31 10 $4.16 100 $2.59 1000 $2.59 10000 $2.59	Buy Now
Newark	SPP20N60C3XKSA1	Bulk	6,035		1	1 $4.6 10 $4.45 100 $2.33 1000 $1.89 10000 $1.89	Buy Now
Rochester Electronics	SPP20N60C3XKSA1		87,432		1	1 - 10 - 100 $1.65 1000 $1.47 10000 $1.39	Buy Now
EBV Elektronik	SPP20N60C3XKSA1		295,500	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	SPP20N60C3XKSA1		236,500		1	1 - 10 - 100 - 1000 $2.46 10000 $2.46	Buy Now
Vyrian	SPP20N60C3XKSA1		46,065			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP20N60C3XKSA1		14,020			1 - 10 - 100 $1.5914 1000 $1.2929 10000 $1.2929	Buy Now
Infineon Technologies AG IGP20N60H3XKSA1 IGBT TRENCH FS 600V 40A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGP20N60H3XKSA1	Tube	372		1	1 $2.51 10 $2.51 100 $1.1029 1000 $0.81472 10000 $0.71575	Buy Now
Avnet Americas	IGP20N60H3XKSA1	Tube	500	19 Weeks	50	1 - 10 - 100 $0.79591 1000 $0.79591 10000 $0.79591	Buy Now
Newark	IGP20N60H3XKSA1	Bulk	109		1	1 $0.847 10 $0.847 100 $0.847 1000 $0.847 10000 $0.847	Buy Now
Rochester Electronics	IGP20N60H3XKSA1		230		1	1 - 10 - 100 $1.02 1000 $0.8471 10000 $0.7552	Buy Now
TME	IGP20N60H3XKSA1		413		1	1 $1.61 10 $1.28 100 $1.2 1000 $1.11 10000 $1.11	Buy Now

Chip One Stop	IGP20N60H3XKSA1	Tube	500	0 Weeks, 1 Days	1	1 $2.37 10 $1.81 100 $0.986 1000 $0.944 10000 $0.895	Buy Now
EBV Elektronik	IGP20N60H3XKSA1			20 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCP20N60FS MOSFET N-CH 600V 20A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP20N60FS	Tube			1,000	1 - 10 - 100 - 1000 $2.41625 10000 $2.41625	Buy Now

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P 20N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60 equivalent Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60 Contextual Info: [ /Title HGT G20N6 0C3R, P 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS T UCT ROD RODUC P E P T E	Original	HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS G20N6 20N60 S20N6 20N60 equivalent 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF
SGW20N60RUF Contextual Info: SGW 20N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	SGW20N60RUF SGW20N60RUF	PDF
20N60C3 Abstract: Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPI20N60C3 Contextual Info: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31 P-TO262-3-1	Original	SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING	PDF
20n60s5 Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 Contextual Info: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated	Original	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5	PDF
20n60s5 Abstract: 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5 Contextual Info: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated	Original	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5	PDF
20n60s5 Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor Contextual Info: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated	Original	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor	PDF
20N60D Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7	OCR Scan	MGW20N60D/D 20N60D	PDF
30n60 Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10 Contextual Info: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10	PDF
Contextual Info: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient	OCR Scan	20N60BU1 100ns O-247	PDF
20N60C3DR Abstract: g20n60c3d 20n60c3 Contextual Info: [ /Title HGT G20N6 0C3D R /Subject (40A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0C3D ES N6 SIBL HGTG20 S O	Original	HGTG20 HGTG20N60C3DR G20N6 20N60C3DR g20n60c3d 20n60c3	PDF
20n60cfd Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF	PDF
transistor 20N60s5 Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5	PDF
20N60C3 Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3 Contextual Info: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31	Original	SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3	PDF

SPW20N60C3 Abstract: transistor 20N60c3 Contextual Info: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3	PDF
20N60C3 Abstract: Q67040-S4550 Contextual Info: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31	Original	SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 SPA20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550	PDF
20n60c3 Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 Contextual Info: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60	PDF
20N60C3 Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60 Contextual Info: Final data SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31	Original	SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60	PDF
20n60s Abstract: 20n60s5 SPW20N60S5 Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5	PDF
20n60s Contextual Info: SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s	PDF
SPW20N60S5 Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5	PDF
20n60s5 Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s	PDF
20n60cfd Abstract: SPP20N60CFD 20n60c Contextual Info: SPP20N60CFD Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD P-TO220-3-1 Q67040-S4616 20N60CFD 20n60cfd SPP20N60CFD 20n60c	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF

P 20N60 Search Results

P 20N60 Price and Stock

Infineon Technologies AG IKP20N60TXKSA1

Infineon Technologies AG SPP20N60S5XKSA1

Infineon Technologies AG SPP20N60C3XKSA1

Infineon Technologies AG IGP20N60H3XKSA1

onsemi FCP20N60FS

P 20N60 Datasheets Context Search

20N60 equivalent

30N120D1

SGW20N60RUF

20N60C3

20n60s5

20n60s5

20n60s5

20N60D

30n60

20N60C3DR

20n60cfd

transistor 20N60s5

20N60C3

SPW20N60C3

20N60C3

20n60c3

20N60C3

20n60s

20n60s

SPW20N60S5

20n60s5

20n60cfd

65e9 transistor