OQ30 Search Results

s - ck5t

Abstract: CA52
Contextual Info: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

THM401020

Contextual Info: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and

Contextual Info: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin­

Contextual Info: O K I Semiconductor M SC23132C/CL-XXBS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23132C/CL-xxBS8/DS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in SOJ packages

Contextual Info: ADVANCE M IC R O N I m "“ 1 MT12D436 4 MEG X 36, 8 MEG X 18 DRAM MODULE 4 MEG X 36, 8 MEG 18 X FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply

MT16D832-6/7

Contextual Info: ADVANCE M IC R O N 8 MEG X DRAM MODULE MT16D832 32, 16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG x16 FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully 1 ÌL compatible

MT18D236G6

Contextual Info: l^ iic n o N 2 MEG X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible

hb56d436br

Abstract: HB56D436BR-6
Contextual Info: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in

Contextual Info: PRELIMINARY M MTt8LD T 47Z(X}(SJI 4 MEG xTZDETAWI M O D ULE IC R O N • u n w a- g rr n l 4 MEG x 72 DRAM MODULE 32 MEGABYTE, ECC, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE MATURES ’ JED EC - and industry-standard E C C pinout in a 168-pin, dual-in-line memory module (D IM M )

T2D 94

Abstract: MT2D25632M6
Contextual Info: M I CR ON S E M I C O N D U C T O R INC b^E ]> • M IC R O N I b l l l S 4 ci G O O ' n S ? lb? WM URN MT2D25632 256K X 32 DRAM MODULE DRAM MODULE 256K x 32 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process

Contextual Info: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32

Contextual Info: M IC R O N • T 512K DRAM MODULE 36, 1 MEG X X MT20D51236 18 DRAM M ODULE 512K x 36,1 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply

Contextual Info: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder

KM416C256AJ

Abstract: KMM532256AW MM5322
Contextual Info: KMM532256AW/WG Fast Page Mode 256KX32 DRAM SIMM Using 256Kx16 DRAM, 5V G E N E R A L D E S C R IP T IO N FEATURES The Samsung K M M 532256AW is a 256K bit x 32 • Performance Range: Dynamic RAM high density memory module. The Samsung K M M 532256A W consists of two C M OS

Katalog tesla tranzistor

Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Contextual Info: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek

Contextual Info: SA M S UN G E L E C T R O N I C S INC b?E D • T ' i b m M S 0 G 1 5 1 ?b 2 bQ ■ SNGK KMM5362000B2/B2G DRAM MODULES 2Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B2 is a 1M b itsx3 6 Dynamic RAM high density memory module. The Samsung

Contextual Info: ADVANCE MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM MICRON • TECHNOLOGY. WC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • •

T2D 17 69

Contextual Info: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts

Flash SIMM 72 29F040

Contextual Info: 2x512Kx32 5V FLASH S IM M p r e l im in a r y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith eight 512Kx8 C M O S

GS507

Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
Contextual Info: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek

j2449

Contextual Info: N EW PRODUCT HB56G136CC Series 1,048,576-Word X 36-Bit High Density Dynamic RAM Card 0H IT A C H I Rev.O Ju l. 03, 1992 Description The HB56G136CC is a 1M X 36 dynamic R A M Card, mounted 8 pieces of 4Mbit D RAM HM514900LTT sealed in T SO P package. An outline of the HB56G13GCC is 88-pin two piece connector package.

Contextual Info: MICR ON S E M I C O N D U C T O R INC m i c r o b l l l S M T G D Q 6 1 3 H 152 M U R N b3E T> n 1 MEG 1 MEG DRAM MODULE X MT9D136 36 DRAM MODULE X 36 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Common RAS control pinout in a 72-pin single-in-line

Contextual Info: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 128K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP

Contextual Info: TOSHIBA THM3210BQAS/ASG -70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3210B0A is a 1,048,576 word by 32 bit dynamic RAM module which is assembled with two TC5118160AJ devices on the printed circuit board. This module can be as well used as 2,097,152 word by 16