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    OQ23 Price and Stock

    On-Shore Technology Inc OSTOQ237150

    TERM BLOCK HDR 23POS VERT 5MM
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    On-Shore Technology Inc OSTOQ23A051

    TERM BLOCK HDR 23POS 90DEG 7.5MM
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    Anytek Technology Corporation Ltd OQ2332500000G

    TERM BLOCK HDR 23POS VERT 3.81MM
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    Interstate Connecting Components OQ2332500000G
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    Anytek Technology Corporation Ltd OQ2371800000G

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    Onlinecomponents.com OQ2371800000G
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    Anytek Technology Corporation Ltd OQ2312510300G

    TERM BLOCK HDR 23POS 90DEG 3.5MM
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    OQ23 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    OQ2312000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312000300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2312010300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2312500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312500300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2312510300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2312800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312800300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2312810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2312810300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2315000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2315010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2315500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2315510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2315800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.5MM Original PDF
    OQ2315810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 90DEG 3.5MM Original PDF
    OQ2332000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS VERT 3.81MM Original PDF
    OQ2332010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 23POS 3.81MM Original PDF

    OQ23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cq837

    Abstract: No abstract text available
    Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36


    OCR Scan     		PDF 364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837

    540L

    Abstract: No abstract text available
    Text: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative


    OCR Scan     		PDF 80960RM 80960JT 32-Bit 1710H 540L

    Untitled

    Abstract: No abstract text available
    Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.


    OCR Scan     		PDF HB56G51236CC 288-WordX 36-Bit 512KX36 514900LTT) 88-pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT58LC32K32/36E1 32K X 32/36 SYNCBURST SRAM MICRON B TECHNOLOGY. INC 32K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11 ns Fast OE# access time: 5ns


    OCR Scan     		PDF MT58LC32K32/36E1

    tc 97101

    Abstract: D472
    Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out


    OCR Scan     		PDF MT9LD272 MT18LD472 168-pin, 048-cycle T18LCW tc 97101 D472

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC Z R O N I _ « MT18LD472 X 4 MEG X 72 DRAM MODULE DRAM 4 MEG x 72 M o n i l i F IV IW U U L t. 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard ECC pinout in a 168-pin, dual-in-line


    OCR Scan     		PDF MT18LD472 168-Pin 168-pin, 240mW 048-cycle

    ds2 lio board

    Abstract: VMP22 6cpw AW3216 TPA 239 P603B I0603B 25Q 328
    Text: f^TC1 _ 1 — 2 -13 —1 ? _ 6 - 7 fi — - 9 1 O — I2 t -! 1 MTG118_N_RD30X12 MTG2 f_ 1 4 — 3 ♦ —2 f—' 4 In f, *— 7 fi i— i— 90 » • —1 » 12 ! 1 r1 M TG118_N_RD30X12 MTG11B_N_RD30X12 MTG118_N_RD3 DH EA SN CG RI IC ON OFC C EPT PC ARD


    OCR Scan     		PDF 0603B R1002 ds2 lio board VMP22 6cpw AW3216 TPA 239 P603B I0603B 25Q 328

    VG46VS8325

    Abstract: ic 3645 sh xaxs
    Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)


    OCR Scan     		PDF VG46VS8325 100/83MHz 32-bit cycles/16ms 100-pin 1G5-0057 IG5-0057 ic 3645 sh xaxs

    OQ23

    Abstract: No abstract text available
    Text: ^EDI EDI8L32128C ELECTRONIC DESIGNS INC. • High Performance Four Megabit SRAM 128Kx32 CMOS High Speed Static RAM Features The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. Four Chip Enables, Write Control, and Output Enable


    OCR Scan     		PDF EDI8L32128C 128Kx32 EDI8L32128C A0-A16 DQ0-DQ31 EDI8L32128C15AC EDI8L32128C17AC OQ23

    kmm366s203b

    Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
    Text: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S203BTN KMM366S203BTN 2Mx64 400mil 168-pin kmm366s203b KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2

    Untitled

    Abstract: No abstract text available
    Text: -¿UL %e ?9£3 ADVANCE MICRON I 32K KM'CONOUCTOR. MC SYNCHRONOUS SRAM X MT58LC32K36A6 36 SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • • • • • • • • • • • Fast access times: 7 ,1 0 ,1 2 and 15ns


    OCR Scan     		PDF MT58LC32K36A6 680X0 MT58LC32K36A6LG-10 64-bit MT58LC32K36A6LG-7 MTSSLC32K36A6

    samsung LRA

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA

    MT501C

    Abstract: No abstract text available
    Text: ADVANCE 128K SYNCHRONOUS SRAM • • • • • • • • • • • • • • +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE PIN ASSIGNMENT Top View Fast access tim es: 4 .5 ,5 , 5.5, 6 and 7ns Fast O E # access tim es: 4.5, 5, 5.5 and 6ns


    OCR Scan     		PDF MT58LC128K32/36F1 MTS6LC128K32ft6F1 MT501C

    tc 97101

    Abstract: 5 PEN PC TECHNOLOGY advance oQ26
    Text: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM


    OCR Scan     		PDF T18LD 168-pin, 048-cycle MT9LD272A MT1BLD472A tc 97101 5 PEN PC TECHNOLOGY advance oQ26

    HM5117400J

    Abstract: No abstract text available
    Text: \ i h , N ü n l b c * M l ! I / / ' 7 NEWPRODUCT HB56D836B Series 8,3 8 8 ,6 0 8 -W o rd X 3 6 -B it H ig h D e n s ity D y n a m ic RAM M odule Rev.O - PRO D UCT P R E V IE W - ^ H I T A P . H l Dec. 24. 1991 D e sc r ip tio n T he H B 5 6 D 8 3 6 B is a 8M X 36 dynam ic R A M module, mounted 16 pieces of 16Mbit D R A M


    OCR Scan     		PDF HB56D836B 16Mbit 1IM511740QJ 72-pin HM5117400J

    M12T1

    Abstract: 5ZZB C5037
    Text: ADE-203-491 2 HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output Preliminary HITACHI D e c o r i 995 Ordering Information Features • • • • • • • • • • • • • • Single 3.3 V power supply (LVTTL)


    OCR Scan     		PDF ADE-203-491 HM62D3232 32768-word 32-bit BP4/196/500/ABC/M M12T102 M12T1 5ZZB C5037

    EDI8L3265C

    Abstract: OQ23 "Electronic designs inc"
    Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array


    OCR Scan     		PDF EDI8L3265C 64Kx32 EDI8L3265C 128Kx16 EDI8L3265C, EDI8L3265C12AC EDI8L3265C15AC EDI8L3265C17AC EDI8L3265C20AC OQ23 "Electronic designs inc"

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM536A414A M-Series 4M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 536A414Ais a 4M x 36-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117404Ain 24/26 pin SOJ on a 7 2 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^ F decoupling capacitors are mounted for each


    OCR Scan     		PDF HYM536A414A 36-bit 536A414Ais HY5117404Ain HYM536A414AM/ASLM HYM536A414AMG/ASLMGareGold A0-A10) DQ0-DQ35) 1CE16-10-APR95

    Untitled

    Abstract: No abstract text available
    Text: 128MB DDR SDRAM MODULE H YMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY D E S C R IP T IO N Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix


    OCR Scan     		PDF 128MB YMD116M6456-H/L 16Mx64 HYMD116M6456-H/L 200-pin 8Mx16 400mil 200pin

    KMM5368105BK

    Abstract: EZ 648
    Text: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES G EN ERA L D ESCRIPTIO N The Samsung KM M 53680 1 05BK is a 8M b it x 36 • Part Identification


    OCR Scan     		PDF KMM5368005BK/BKG KMM5368105BK/BKG KMM5368005BK/BKG KMM5368105BK/BKG 8Mx36 24-pin 28-pin 72-pin KMM5368105BK EZ 648

    Untitled

    Abstract: No abstract text available
    Text: O K I S em iconductor M SC23437A-XXBS9/PS9 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23437A-xxBS9/DS9 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 4M x 4 in SO) packages


    OCR Scan     		PDF SC23437A-XXBS9/PS9 304-Word 36-Bit MSC23437A-xxBS9/DS9 16-Mb 72-pin

    THM321020

    Abstract: No abstract text available
    Text: THM321020S-80, 10 THM321020SG-80, 10 1,048,576 W O RDS X 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY DESCRIPTION The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by


    OCR Scan     		PDF THM321020S-80, THM321020SG-80, THM321020S TC514400J THM321020

    Untitled

    Abstract: No abstract text available
    Text: [M IC R O N 32K SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6 and 7ns Fast OE# access times: 4.5, 5 and 6ns Single +3.3V +10% /-5% pow er supply


    OCR Scan     		PDF T58LC 32/36C 100-lead

    MH8M32

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8M X 32 256 MBIT Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page ins) MH8M32AJ-6 * 60 MH8M32AJ-7 ★ 70 MH8M32AFJ-6 * MH8M32NAFJ-6 ★ MH8M32AFJ-7 ★ MH8M32NAFJ-7


    OCR Scan     		PDF MH8M32AJ-6 MH8M32AJ-7 MH8M32AFJ-6 MH8M32NAFJ-6 MH8M32AFJ-7 MH8M32NAFJ-7 M5M417400AJ MH8M32