ON 408/10 TRANSISTOR Search Results

AQS225R2SZ

Abstract: power supply tester schematic diagram AQS225R2S AQS225R2SX AQS225S AK 1037 medical ultrasonic probe schematic diagram of an electric iron
Contextual Info: RF PhotoMOS AQS225R2S High capacity and low on resistance. RF in SOP 4 Form A type 4.4 .173 2.1 .083 10.37 .408 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Footprint SOP 2-channel type 1. High-level functions (high capacity and low on resistance) Features: Compared to predecessor (AQS225S)

CEM3310

Abstract: jfet s00 jfet transistor for VCR
Contextual Info: 25E D • bTIOMS? QQOQ251 S ■ ON CHIP S Y S T EM S CEM 3310 " T - S D - O 0! CURTIS € U C T R 0 fflU 5 tC S P « W fft€ 3 110 H ig h la n d Ave. L o s G atos Ca. 9S030, U S A Tel. 408 395-3350 Voltage Controlled Envelope Generator The C E M 3 3 10 Is a self-contained,

transistor 4500

Abstract: MP4T6825 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j
Contextual Info: Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • MP4T6825 Series SOT-23 Low Current Operation High fT 8 GHz Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel Description The MP4T6825 series of low current silicon bipolar

Contextual Info: 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series SOT-23 Features • • • • • Low Voltage Operation 3 - 5V High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel Description The MP4T6325 series of low voltage silicon bipolar

MP4T6325

Abstract: Bipolar Transistor transistor b 1238 mount chip transistor 332 2608 surface mount transistor transistor K 1377 on 4508 TRANSISTOR MP4T632500 MP4T632533 MP4T632539
Contextual Info: 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series SOT-23 Features • • • • • Low Voltage Operation 3 - 5V High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel Description The MP4T6325 series of low voltage silicon bipolar

MP4T6310

Abstract: Bipolar Transistor 0107 NA SILICON TRANSISTORS transistor d 1933 MP4T631000 MP4T631033 MP4T631035 MP4T631039 S21E S22E
Contextual Info: 3 Volt, Low Noise High fT Silicon Transistor Features • • • • • MP4T6310 Series SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents 0.3-2 mA High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel

52426

Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
Contextual Info: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

Contextual Info: 3 Volt, Low Noise High fT Silicon Transistor Features • • • • • MP4T6310 Series SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents 0.3-2 mA High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel

Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

Lovoltech

Abstract: POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N
Contextual Info: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching

MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Features • • • • • • • Case Style Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

Contextual Info: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current

Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistors Case Styles Features • • • • • • MP4T645 f T to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels

MP4T856

Abstract: 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E
Contextual Info: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz

Contextual Info: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz

MP4T645

Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard

MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages

Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages

ccfl inverter mosfets

Abstract: Tokin LCD Inverter Board Sumida LCD Inverter tokin lcd inverter Allen Bradley POTENTIOMETERS inverter ccfl sumida allen bradley potentiometer philips ccfl inverter inverter ccfl toshiba toshiba ccfl inverter
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 515 CCFL POWER SUPPLY LT1373 DESCRIPTION Demonstration Circuit 515 is a single output CCFL inverter with dimming and over-voltage protection features. The inverter consists of a LT1373 and a Royer converter that uses bipolar transistors. The

Contextual Info: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L

Lovoltech

Abstract: LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02
Contextual Info: PWRLITE LS1106S High Performance N-Channel JFET Transistor with Schottky Diode Description Features Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC