S22E Search Results

S22E Result Highlights (3)

Part	Manufacturer	Description
DS22EV5110SQ/NOPB	Texas Instruments	DVI, HDMI Extended Reach Equalizer with Retimer and Output De-Emphasis 48-WQFN 0 to 70
DS22EV5110SQE/NOPB	Texas Instruments	DVI, HDMI Extended Reach Equalizer with Retimer and Output De-Emphasis 48-WQFN 0 to 70
DS22EV5110SQX/NOPB	Texas Instruments	DVI, HDMI Extended Reach Equalizer with Retimer and Output De-Emphasis 48-WQFN 0 to 70

S22E Price and Stock

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Vishay Semiconductors SS22-E3-52T DIODE SCHOTTKY 20V 2A DO214AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SS22-E3-52T	Cut Tape	4,670		1	1 $0.53 10 $0.347 100 $0.53 1000 $0.53 10000 $0.53	Buy Now
	SS22-E3-52T	Reel	3,750		750	1 - 10 - 100 - 1000 $0.12475 10000 $0.12475	Buy Now
Vishay Semiconductors SS22-E3-5BT DIODE SCHOTTKY 20V 2A DO214AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SS22-E3-5BT	Digi-Reel	3,119		1	1 $0.56 10 $0.363 100 $0.56 1000 $0.1861 10000 $0.1861	Buy Now
	SS22-E3-5BT	Cut Tape	3,119		1	1 $0.56 10 $0.363 100 $0.56 1000 $0.1861 10000 $0.1861	Buy Now
Telit ENS22-E-REL.1 RF TXRX MOD CELL LTE EUROPE SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ENS22-E-REL.1	Cut Tape	468		1	1 $20.63 10 $16.206 100 $13.2659 1000 $12.40876 10000 $12.40876	Buy Now
	ENS22-E-REL.1	Reel			1,000	1 - 10 - 100 - 1000 $11.37235 10000 $11.37235	Buy Now
Integrated Silicon Solution Inc IS22EF08G-JCLA2 IC FLASH 64MBIT EMMC 153FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS22EF08G-JCLA2	Tray	32		1	1 $14.38 10 $9.994 100 $7.73575 1000 $7.43748 10000 $7.43748	Buy Now
Avnet Americas	IS22EF08G-JCLA2			10 Weeks	152	1 - 10 - 100 - 1000 $7.16995 10000 $7.1328	Buy Now
Mouser Electronics	IS22EF08G-JCLA2					1 $12.9 10 $10 100 $7.44 1000 $7.43 10000 $7.43	Get Quote
Avnet Asia	IS22EF08G-JCLA2			10 Weeks	304	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS22EF08G-JCLA2			28 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	IS22EF08G-JCLA2			27 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Telit DEVKIT-ENS22-E-NB-IOT NB-IOT DEV KIT WITH ENS22 MODULE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DEVKIT-ENS22-E-NB-IOT	Box	32		1	1 $100 10 $100 100 $100 1000 $100 10000 $100	Buy Now

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S22E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings	Original	GUVA-S22ED	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz	OCR Scan	2SC4322 IS21ei2	PDF
Untitled Abstract: No abstract text available Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , \|S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC3607 -j250	PDF
Untitled Abstract: No abstract text available Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, \|S2le \|2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)	OCR Scan	2SC5096 S21el2	PDF
LT 7706 Abstract: LT 7207 Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, \|S 2 1 e\|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5097 -j250 LT 7706 LT 7207	PDF
Untitled Abstract: No abstract text available Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , \|S 2 le P = l l d B f = l G H z 0 8 ±0.1	OCR Scan	2SC5086	PDF
Untitled Abstract: No abstract text available Text: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : \|S 2 ie\|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)	OCR Scan	2SC301 SC-59 S21eP 2SC3011 --j50	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 Q Q 3 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm + 0 .5 8 .5 - 0 . 3 • Low Noise Figure. . NF = 2.5dB, \|S2le\|2 = 14.5dB f=500M Hz . NF = 3.0dB, \|S2le\|2= 9.0dB (f=lG H z) L 5 - 0 .1 5	OCR Scan	SC-59 2SC3098	PDF
Silicon Bipolar Transistor Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, \| S21E \|2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN	Original	MP4T56800 MP4T568 MP4T56800, Silicon Bipolar Transistor MP4T56800 Medium Power Bipolar Transistors S21E S22E c 1685 transistor	PDF
MP4T243 Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages	Original	MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, \|S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, \|S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC3099 500MHz) SC-59	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS. Unit in iran VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1. 25 ± 0 . 1 oe +i 3- 2 -Efl MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 30	OCR Scan	2SC4245 SCN-5948 TTA23A100	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, \|S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, \|S2 ie l2 = 9.0dB(f=lGHz)	OCR Scan	2SC3098 500MHz) SC-59 S21el2	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , \|S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SC3606 SC-59	PDF

2SC4364 Abstract: No abstract text available Text: O rd e rin g n u m b e r :E N 3008 _ 2 S C 4 3 6 4 NPN Epitaxial Planar Silicon Transistor VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications Features • Low-voItage operation fr = 3.0GHztyp VCE:=3V MAG= lldB typ (VCE = 3V,IC= 3mA)	OCR Scan	2SC4364 2SC4364	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
2SC4864 Abstract: sanyo lc 15011 ZS22 ic 3586 Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)	OCR Scan	2SC4864 sanyo lc 15011 ZS22 ic 3586	PDF
2SA1969 Abstract: No abstract text available Text: Ordering number:EN5O90 N o.5098 SA IVO i 2 S A 1 9 6 9 II PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier, MediumCurrent Ultrahigh-Speed Switching Applications F eatu res • HighÍT{ÍT = l-7G H ztyp . • Large current capacity Ic = —400mA).	OCR Scan	EN5098 2SA1969 400mA) 250mm2	PDF
2SC4270 Abstract: 2SC4407 2SC4407-3 Text: Ordering num ber: EN 2760 _ 2 S C 4 4 0 7 No.2760 NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications Applications • VHF/UHF mixers, frequency converters, local oscillators Features • High cutoff frequency fp = 3.0GHz typ	OCR Scan	2SC4407 2SC4407-applied 2SC4270 2SC4407 2SC4407-3	PDF
CQ 817 Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860 Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.	OCR Scan	EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580	PDF
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335	PDF
MA4T636533 Abstract: transistor sot-23 2613 MA4T6365 Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	Original	MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613	PDF
Untitled Abstract: No abstract text available Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)	Original	2SC5277A ENA1075A A1075-8/8	PDF
2SC4470 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC4470 U n it in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A P P LIC A TIO N S. • Low N oise Figure, H igh Gain. N F = l.ld B , \|S 2 le\|2 = H d B f= lG H z + 0 .5 2 5 - 0 .3 + 0.25 1 . 5 - 0 1 5_,	OCR Scan	-2SC4470 SC-59 2SC4470 --20mA 2SC4470	PDF

S22E Search Results

S22E Result Highlights (3)

S22E Price and Stock

Vishay Semiconductors SS22-E3-52T

Vishay Semiconductors SS22-E3-5BT

Telit ENS22-E-REL.1

Integrated Silicon Solution Inc IS22EF08G-JCLA2

Telit DEVKIT-ENS22-E-NB-IOT

S22E Datasheets Context Search

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LT 7706

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Silicon Bipolar Transistor

MP4T243

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2SC4364

IC HXJ 2038

2SC4864

2SA1969

2SC4270

CQ 817

b 595 transistor

MA4T636533

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2SC4470