OC SC62 Search Results

2SD2172

Abstract: 2SD2165 2SD2152 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138
Contextual Info: - 282 - W c k & fà l a = 2 b V , * m t l c = 2 h aC M 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2139 2SD2140 2SD2144S 2SD2145 2SD2145M 2SD2148 oc*noi »n 2SD2150 2SD2151 2SD2152 2SD2154 2SD2156 2SD2156A 2SD2157 2SD2157A 2SD2158

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

2SC1766GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)

2SA1213GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: t stg= 1.0uSec (typ.)

2SA1213PT

Abstract: oc pnp sc62
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1213PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: t stg= 1.0uSec (typ.)

FR4 substrate

Abstract: Y1766 2sc1766
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC1766PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)

CHT2907XGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT2907XGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small surface mounting type. SC-62/SOT-89

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power

transistor eb 2030

Abstract: transistor 2030 2SC5209 oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.

2SA1369

Abstract: oc pnp sc62 oc sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1369 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1369 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING collector dissipation, high collector current, high hFE.

BSS192

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

transistor a200

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Schottky Diode SC-62

Abstract: SE046 diode sc-62
Contextual Info: COL L HE R S E M I C O N D U C T O R SE046 o INC 4flE D • 2 2 3 0 7 ^ 2 G00174fi 2flfl » C O L . 9 5 A _ 2 2 V ■ Outline Drawings SCHOTTKY BARRIER DIODE i 6 ma:X. 4.6 MAX. 1 ¡anh) 0.44 MAX. 0.55 MAXJ-J_ .15, . 15 I 0.48 MAX.

S5100

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1947 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1947 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING Unit mm designed with high collector current and 2 to 3.5W low frequency power amplify.

2sc5211

Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC5211 FOR GENERAL-PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5211 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and high voltage.

2SC5210

Abstract: 25M SC-62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5210 FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE DESCRIPTION M itsubishi 2 S C 5210 is a silicon NPN trip le diffu se d tra n sisto r d esig n ed for OUTLINE DRAWING

Contextual Info: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1

mitsubishi vcb

Abstract: 2SC3443
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3443 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3443 is a silicon NPN epitaxial type transistor designed for small OUTLINE DRAWING Uni( type motor drive, power supply application.

2SB772GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)

2SD882GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)

2SB772PT

Abstract: 2SB772P TRANSISTOR b 772 p E72 transistor common collector PNP 772 pnp oc sc62
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB772PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)

2sa1363

Abstract: mitsubishi 2SA1363
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1363 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1363 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING Uni,:mm collector current and high collector dissipation.

2SD882P

Abstract: P82 transistor transistor MW 882 2SD882PT 10A Switching convertor 882 transistor
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD882PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)