NSS1C300E Search Results
NSS1C300E Price and Stock
onsemi NSS1C300ET4GTRANS PNP 100V 3A DPAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSS1C300ET4G | Digi-Reel | 8,458 | 1 |
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NSS1C300ET4G | Reel | 10 Weeks | 2,500 |
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NSS1C300ET4G | 6,682 |
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NSS1C300ET4G | Cut Tape | 3,627 | 5 |
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NSS1C300ET4G |
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NSS1C300ET4G | 86 |
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NSS1C300ET4G | 2,106 |
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NSS1C300ET4G | 10 Weeks | 2,500 |
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NSS1C300ET4G | 11 Weeks | 2,500 |
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NSS1C300ET4G | 12 Weeks | 2,500 |
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NSS1C300ET4G | 5,947 |
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NSS1C300ET4G | 522 | 1 |
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NSS1C300E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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NSS1C300ET4G |
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NSS1C300 - TRANSISTOR 3 A, 100 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3, BIP General Purpose Power | Original |
NSS1C300E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NSS1C300ET4G
Abstract: NSS1C300E
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Original |
NSS1C300ET4G NSS1C300E/D NSS1C300E | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D |