NSS1C301ET4G Search Results
NSS1C301ET4G Price and Stock
onsemi NSS1C301ET4GTRANS NPN 100V 3A DPAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSS1C301ET4G | Digi-Reel | 4,596 | 1 |
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NSS1C301ET4G | Reel | 8 Weeks | 5,000 |
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NSS1C301ET4G | 3,654 |
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NSS1C301ET4G | 2,500 | 2,500 |
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NSS1C301ET4G | 2,500 | 8 Weeks | 2,500 |
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NSS1C301ET4G | Cut Tape | 6,399 | 5 |
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NSS1C301ET4G | Reel | 8 Weeks | 5,000 |
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NSS1C301ET4G |
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NSS1C301ET4G | 1,676 | 1 |
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NSS1C301ET4G | 12,532 |
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NSS1C301ET4G | 2,500 | 9 Weeks | 2,500 |
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NSS1C301ET4G | Cut Tape | 1,550 | 0 Weeks, 1 Days | 5 |
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NSS1C301ET4G | 10 Weeks | 2,500 |
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NSS1C301ET4G | 1,428 |
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NSS1C301ET4G | 2,500 | 1 |
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NSS1C301ET4G | 3,578 |
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NSS1C301ET4G | 12,000 |
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NSS1C301ET4G | 5,000 | 1 |
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NSS1C301ET4G Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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NSS1C301ET4G |
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NSS1C301 - TRANSISTOR 3 A, 100 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, PLASTIC, CASE 396C, DPAK-3, BIP General Purpose Power | Original |
NSS1C301ET4G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1C31EG
Abstract: 617 300
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Original |
NSS1C301ET4G NSS1C301E/D 1C31EG 617 300 | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C301ET4G NSS1C301E/D | |
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
Original |
NSS1C300ET4G NSS1C300E/D |