2N3855
Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3855
2N3856
2N3854
2N3856A
2N3855A
2N3854A
n3860
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BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti
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BF180
BF180
s21b
BF180 TRANSISTOR
s parametres
s22b
bf 180
CE 470 10V
J BF180
MAX S21B
est 504
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s22b
Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili
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BF181
s22b
bf181
s21b
b 514 transistor
bf 181
bf181 transistor
ic s21b
J BF181
MAX S21B
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bdl 40
Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor
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BFG480W
BFG480W
SCA60
04/00/02/pp1
bdl 40
l43 transistor
transistor marking 2d ghz
9335 895
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3055 transistor
Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
005ms
aa35b05
3055 transistor
transistor 3055
3055
2N3055
2SC 2276
M 3055 power transistor
n3055
2N3066
power transistor 3055
33S3
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bfg67
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors
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BFG67;
BFG67/X;
BFG67/XR
BFG67/XR
BFG67
BFG67/X
SCA60
bfg67
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BFP91A
Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Text: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features
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bbS3T31
BFP91A
OT173
OT173X
BFQ23C.
OT173.
BFP91A
BFP91A NPN PHILIPS
BFQ23C
SOT173
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transistor marking zg
Abstract: PBSS4320T PBSS5320T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES
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PBSS4320T
SCA76
R75/02/pp10
transistor marking zg
PBSS4320T
PBSS5320T
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features
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bb53T31
BFP91A
OT173
OT173X
BFQ23C.
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transistor smd zG
Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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OT143
BFG17A
MSB014
OT143.
711062fci
711062b
7110A2L
transistor smd zG
npn zg
SMD Transistor zG
TRANSISTOR 610 smd
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • ! bb53T31 0031568 675 U APX _Product_specification NPN 5 GHz wideband transistor ^ BFQ53 N DESCRIPTION AMER PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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bb53T31
BFQ53
BFQ52.
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smd transistor fq 30
Abstract: BFG17A TRANSISTOR 610 smd
Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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BFG17A
OT143
M5B014
OT143.
MBB376
711002b
smd transistor fq 30
BFG17A
TRANSISTOR 610 smd
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transistor zg
Abstract: F689K BF689 zg transistor
Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION
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BF689K
F689K
SB034
transistor zg
BF689
zg transistor
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Transistor TT 2144
Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
Transistor TT 2144
Sii 9573
2907 pnp transistor
NPN/Transistor TT 2144
Sii 9024
22E09
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free transistor equivalent book
Abstract: free all transistor equivalent book transistor marking zg sot23 transistor marking ZG
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4320T 20 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and
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M3D088
PBSS4320T
SCA74
613514/01/pp12
free transistor equivalent book
free all transistor equivalent book
transistor marking zg
sot23 transistor marking ZG
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transistor marking zg
Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal general
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CMXT2222A
OT-26
150mA,
15nnA
OT-26
06-January
transistor marking zg
npn Epitaxial Silicon zg
0118 transistor
538 NPN transistor
LC marking code transistor
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Transistor BSX 62-16
Abstract: No abstract text available
Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3
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023Sb05
BSX62
------------------------------------BSX63
Q60218-X62
Q60218-X62-B
Q60218-X62-C
Q60218-X62-D
Q60218-X63
Q60218-X63-B
060218-X63-C
Transistor BSX 62-16
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TRANSISTOR c 5578 B
Abstract: 603 transistor npn
Text: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is
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BFP90A
OT173and
OT173X
TRANSISTOR c 5578 B
603 transistor npn
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BFQ65
Abstract: No abstract text available
Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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QQ31S
BFQ65
BFQ65
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bfg91a
Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in
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G031233
BFG91A
bfg91a
transistor kt 801
MBS330
transistor 446-1
1SS TRANSISTOR
transistor kt 326
FP 801
transistor SOT103
transistor C 2290
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transistor P1P
Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and
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bbS3T31
BFR92
BFT92.
transistor P1P
BFR92
p1p transistor
BFT92
Philips MBB
BFR90 amplifier
J31 transistor
BFR90
code p1p
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PDF
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BFG195
Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
Text: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband
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bbS3T31
0D313M4
BFG195
BFG195
5609 transistor
transistor 5609
5609 npn transistor
5609 npn
5609 6 LC
0703 transistor
702 Z TRANSISTOR
MSB037
5609 t transistor
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PBSS4320T
Abstract: PBSS5320T transistor marking zg
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and
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Original
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PBSS4320T
R75/02/pp10
PBSS4320T
PBSS5320T
transistor marking zg
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat and
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Original
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PBSS4320T
R75/02/pp10
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PDF
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