QQ31S Search Results

TRIAC BTA 16 600b

Contextual Info: 30E T> m 7 ^ 2 3 7 QQ31SbO 2 • _ ^Ç-2S ~ \^ _ SGS-THOMSON J f lM s im t iS T M M S B T A 2 5 B S G S-THOMSON TRIACS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP FAST-ON CONNEXIONS Igt SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE 2500 V rms UL RECOGNIZED E81734

BFQ65

Contextual Info: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz

Contextual Info: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

600bw

Abstract: BTA16-200
Contextual Info: 3DE » H T 'is s a ? 'TiZS-\$ 0D3154Ô 1 • HZ7 SGS-THOMSON ^ 7# s L IO T « ! B T A 1 6 BW S G S-THOMSON SNUBBERLESS TRIACS ■ ■ ■ ■ ■ ■ It r m s = 16 A at Tc = 80 °C. Vdrm : 200 V to 800 V. Ig t = 50 mA Ql-ll-lll . GLASS PASSIVATED CHIP.

SAB82C206

Abstract: 82c206f 82C206
Contextual Info: 47E D • ÖE3SbOS 0031522 1 ■ SIEG SIEMENS AKTI ENGESELLSCHAF SAB 82C206 Integrated Peripheral Controller -r-'5'3r'b'S>-\5 P re lim in a ry • P rogram m able w a it states fo r the D M A cycle and internal register access • 8 MHz DMA clock • 16 Mbytes o f D M A address space

bfg91a

Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in