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    NPN SILICON POWER TRANSISTORS Search Results

    NPN SILICON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN SILICON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5192G

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 PDF

    BD435

    Abstract: BD441
    Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G PDF

    bd439g

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G PDF

    2SC2073

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector


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    2SC2073 2SC2073 2SC2073L- 2SC2073G-TA3-T O-220 QW-R221-021 PDF

    2N3771

    Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
    Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON


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    2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771 PDF

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d PDF

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D PDF

    2N3683

    Abstract: 2N6385 shockley diode 2N6383 2N6384
    Text: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER


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    2N6383 2N6384 2N6385 2N3683 2N6385 shockley diode 2N6383 2N6384 PDF

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011 PDF

    13003ADA

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-K QW-R223-016 PDF

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DF 13003DF 13003DFL-xx-T60-F-K 13003DFG-xx-T60-F-K 13003DFL-xx-T9at QW-R223-014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020 PDF

    13003ad

    Abstract: 13003ADA
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-K 13003ADAL-T92-F-B 13003ADAL-T9at QW-R223-016 13003ad PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13002AH 13002AH 13002AHL-TM3-T 13002AHL-T60-K 1300at QW-R223-019 PDF

    NPN transistor Electronic ballast to92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92 PDF