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    NPN FET Search Results

    NPN FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222 PDF

    photo transistor til 78

    Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
    Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083


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    ECG3040 ECG3041 ECG3042 ECG3043 ECG3044 ECG3045 photo transistor til 78 ecg 3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098 PDF

    LSE B9

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.


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    2SC4617 OT-416/SC-90 7-inch/3000 LSE B9 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.


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    2SC4617/D 2SC4617 T-416/SC 7-inch/3000 OT-416/SC-90 PDF

    2SC4617

    Abstract: SMD310
    Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.


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    2SC4617/D 2SC4617 OT-416/SC 7-inch/3000 2SC4617/D* 2SC4617 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency


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    KTX955T 270Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B ・Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency


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    KTX955T 270Hz PDF

    UPA509TA

    Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
    Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor


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    PA509TA SC-74A UPA509TA uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509 PDF

    KTX955T

    Abstract: No abstract text available
    Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency


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    KTX955T EMKTX955T 270Hz KTX955T PDF

    P781

    Abstract: Q62702-P75 foto transistor Q62702-P79-S2 Q62702-P79-S1 Q62702-P79-S4 200 BP
    Text: BP 103 BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm


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    fet06017 IPCE/IPCE25o ICEO/ICEO25o P781 Q62702-P75 foto transistor Q62702-P79-S2 Q62702-P79-S1 Q62702-P79-S4 200 BP PDF

    CPH5901

    Abstract: No abstract text available
    Text: Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly


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    EN8278B CPH5901 150mA, CPH5901 2SK932 2SC4639, PDF

    P781

    Abstract: bp 103-5 BF900 B 103 Fotodiode fototransistor led SFH 212 transistor b 103 marking BP LED Q62702-P79-S2
    Text: BP 103 BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm


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    fet06017 ICEO/ICEO25o IPCE/IPCE25o P781 bp 103-5 BF900 B 103 Fotodiode fototransistor led SFH 212 transistor b 103 marking BP LED Q62702-P79-S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7177B CPH5905 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly


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    EN7177B CPH5905 150mA, CPH5905 2SK3357-equivalent 2SC4639-equivalent PDF

    VEC2901

    Abstract: No abstract text available
    Text: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.


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    VEC2901 ENN8198 VEC2901 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly


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    EN6962C CPH5902 150mA, CPH5902 2SK2394-equivalent 2SC4639-equivalent PDF

    ENN8366

    Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
    Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


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    CPH5903 ENN8366 CPH5903 2SK1740-equivalent 2SC2812-equivalent ENN8366 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET PDF

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


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    OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72 PDF

    CPH5905

    Abstract: ITR02749 ITR02750 marking 1e 2sk3557
    Text: CPH5905 Ordering number : ENN7177A NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency


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    CPH5905 ENN7177A CPH5905 2SK3557-equivalent 2SC4639-equivalent ITR02749 ITR02750 marking 1e 2sk3557 PDF

    2SC4639

    Abstract: No abstract text available
    Text: Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications unit : mm 2196 [CPH5905] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Composite type with J-FET and NPN transistors


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    ENN7177 CPH5905 CPH5905] CPH5905 2SK3557-equivalent 2SC4639-equivalent 2SC4639 PDF

    CPH5902

    Abstract: ITR10364 ITR10365 2sk2394-equivalent ITR10367
    Text: CPH5902 Ordering number : ENN6962B CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


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    CPH5902 ENN6962B CPH5902 2SK2394-equivalent 2SC4639-equivalent ITR10364 ITR10365 ITR10367 PDF

    Phototransistor bp 101

    Abstract: BP103 siemens
    Text: SIEM ENS BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im


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    PDF

    CPH5902

    Abstract: ITR10364 ITR10365 ITR10367
    Text: CPH5902 Ordering number : ENN6962A CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


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    CPH5902 ENN6962A CPH5902 2SK2394-equivalent 2SC4639-equivalent ITR10364 ITR10365 ITR10367 PDF

    fet junction transistor

    Abstract: marking rb CPH5902 ITR10364 ITR10365 ITR10367 2SC4639
    Text: Ordering number : ENN6962 CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications [CPH5902] 2.9 5 4 0.15 3 0.05 0.6 1.6 • unit : mm 2196 0.2 • Composite type with J-FET and NPN transistors


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    ENN6962 CPH5902 CPH5902] CPH5902 2SK2394-equivalent 2SC4639-equivalent fet junction transistor marking rb ITR10364 ITR10365 ITR10367 2SC4639 PDF

    TA3705

    Abstract: No abstract text available
    Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


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    ENN8278A CPH5901 CPH5901 2SK932 2SC4639, TA3705 PDF