2N3053 NPN transistor
Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE
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2N2897
2N2898
2N2899
2N2900
2N3019
2N3020
2N3036
2N3053
BT2946
2N2946
2N3053 NPN transistor
BT2222A
2N22
BT2222
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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LSE B9
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617
OT-416/SC-90
7-inch/3000
LSE B9
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
T-416/SC
7-inch/3000
OT-416/SC-90
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2SC4617
Abstract: SMD310
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
OT-416/SC
7-inch/3000
2SC4617/D*
2SC4617
SMD310
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Untitled
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
270Hz
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Untitled
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B ・Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
270Hz
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UPA509TA
Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor
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PA509TA
SC-74A
UPA509TA
uPA50
MARKING UV
N-Channel Silicon Junction Field Effect Transistor
uPA509
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KTX955T
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
EMKTX955T
270Hz
KTX955T
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P781
Abstract: Q62702-P75 foto transistor Q62702-P79-S2 Q62702-P79-S1 Q62702-P79-S4 200 BP
Text: BP 103 BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm
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fet06017
IPCE/IPCE25o
ICEO/ICEO25o
P781
Q62702-P75
foto transistor
Q62702-P79-S2
Q62702-P79-S1
Q62702-P79-S4
200 BP
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CPH5901
Abstract: No abstract text available
Text: Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly
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EN8278B
CPH5901
150mA,
CPH5901
2SK932
2SC4639,
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P781
Abstract: bp 103-5 BF900 B 103 Fotodiode fototransistor led SFH 212 transistor b 103 marking BP LED Q62702-P79-S2
Text: BP 103 BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm
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fet06017
ICEO/ICEO25o
IPCE/IPCE25o
P781
bp 103-5
BF900
B 103
Fotodiode
fototransistor led
SFH 212
transistor b 103
marking BP LED
Q62702-P79-S2
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN7177B CPH5905 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly
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EN7177B
CPH5905
150mA,
CPH5905
2SK3357-equivalent
2SC4639-equivalent
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VEC2901
Abstract: No abstract text available
Text: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
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VEC2901
ENN8198
VEC2901
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly
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EN6962C
CPH5902
150mA,
CPH5902
2SK2394-equivalent
2SC4639-equivalent
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ENN8366
Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5903
ENN8366
CPH5903
2SK1740-equivalent
2SC2812-equivalent
ENN8366
ITR01960
ITR01961
ITR01963
ITR01964
ITR01965
ITR01966
J 350 FET
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2N3819
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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OT-416/SC
7-inch/3000
2SC4617
SURFAC218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819
BC237
BCY72
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CPH5905
Abstract: ITR02749 ITR02750 marking 1e 2sk3557
Text: CPH5905 Ordering number : ENN7177A NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency
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CPH5905
ENN7177A
CPH5905
2SK3557-equivalent
2SC4639-equivalent
ITR02749
ITR02750
marking 1e
2sk3557
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2SC4639
Abstract: No abstract text available
Text: Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications unit : mm 2196 [CPH5905] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Composite type with J-FET and NPN transistors
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ENN7177
CPH5905
CPH5905]
CPH5905
2SK3557-equivalent
2SC4639-equivalent
2SC4639
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CPH5902
Abstract: ITR10364 ITR10365 2sk2394-equivalent ITR10367
Text: CPH5902 Ordering number : ENN6962B CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5902
ENN6962B
CPH5902
2SK2394-equivalent
2SC4639-equivalent
ITR10364
ITR10365
ITR10367
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Phototransistor bp 101
Abstract: BP103 siemens
Text: SIEM ENS BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im
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CPH5902
Abstract: ITR10364 ITR10365 ITR10367
Text: CPH5902 Ordering number : ENN6962A CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5902
ENN6962A
CPH5902
2SK2394-equivalent
2SC4639-equivalent
ITR10364
ITR10365
ITR10367
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PDF
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fet junction transistor
Abstract: marking rb CPH5902 ITR10364 ITR10365 ITR10367 2SC4639
Text: Ordering number : ENN6962 CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications [CPH5902] 2.9 5 4 0.15 3 0.05 0.6 1.6 • unit : mm 2196 0.2 • Composite type with J-FET and NPN transistors
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ENN6962
CPH5902
CPH5902]
CPH5902
2SK2394-equivalent
2SC4639-equivalent
fet junction transistor
marking rb
ITR10364
ITR10365
ITR10367
2SC4639
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TA3705
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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ENN8278A
CPH5901
CPH5901
2SK932
2SC4639,
TA3705
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