2n3019 equivalent
Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE
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OCR Scan
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2N2897
2N2898
2N2899
2N2900
2N3019
2N3020
2N3036
2N3053
2N329A
BCY56
2n3019 equivalent
2N3053 equivalent
BC140 equivalent
BC141 equivalent
2n930 equivalent
bcy59 equivalent
BC107 equivalent transistors
2N328A
BC109C NPN
bcy31
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2n3901 equivalent
Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2n3901 equivalent
2N3900 pnp
2N3900 pnp transistor
2n3900
2N3392 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: ᒦൈहࡍྯ Medium Power Transistor NPN Medium Power Transistor(NPN) DESCRIPTION & FEATURES 1) Low VCE (sat) =0.5V(Typ) (IC /IB =2A/0.2A) 2) Epitaxial planar type, NPN silicon transistor FHD1766 ᒦൈहࡍྯ 概述及特點 SOT-89
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FHD1766
OT-89
OT-89
FHD1766P
FHD1766Q
FHD1766R
CHARA120
100MHz
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PDF
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TIP111
Abstract: TIP112
Text: TIP110, TIP111, TIP112 NPN General PurposeTransistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren NPN Version 2004-06-21 Collector current – Kollektorstrom 2A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g
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TIP110,
TIP111,
TIP112
UL94V-0
O-220AB
TIP110
TIP111
TIP115,
TIP116,
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BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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PDF
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transistor buv 90
Abstract: No abstract text available
Text: SCS-THOMSON ^ 7# BUV26 MEDIUM POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED . LOW COLLECTOR EMITTER SATURATION APPLICATIONS . SWITCHING REGULATORS • MOTOR CONTROL DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN
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OCR Scan
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BUV26
O-220
300ns,
transistor buv 90
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PDF
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mje13005d
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379
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UTC 379
Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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Original
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MJE13005D
MJE13005D
QW-R502-379
UTC 379
transistor MJE13005D
ELECTRONIC BALLAST transistor DIAGRAM
MJE13005DL-T60-T
to-126 npn switching transistor 400v
NPN 2A TO 126
MJE13005-D
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mje13005d
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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Original
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MJE13005D
MJE13005D
QW-R502-379.
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC
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UDT1605
UDT1605
UDT1605G-AB3-R
OT-89
QW-R208-048
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PDF
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SMMBT3904WT1
Abstract: No abstract text available
Text: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which
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MMBT3904WT1,
SMMBT3904WT1,
MMBT3906WT1,
OT-323/SC-70
AEC-Q101
SC-70
OT-323)
SMMBT3904WT1
MMBT3906WT1
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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Original
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MJE13005D
MJE13005D
QW-R502-379
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which
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MMBT3904WT1,
SMMBT3904WT1,
MMBT3906WT1,
323/SCâ
SMMBT39
MMBT3904WT1/D
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PDF
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MJE13005D
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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Original
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MJE13005D
MJE13005D
QW-R502-379.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
transistor MJE13005D
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transistor D4203D
Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high
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D4203D
D4203D
QW-R204-026
transistor D4203D
D4203
d4203d TRANSISTOR
D4203DL-T60-K
to-126 npn switching transistor 400v
npn transistor 400V
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NPN Transistor 5A 400V
Abstract: utc High Voltage Switching Transistor planar transistor
Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE
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BU407
BU407
O-220
QW-R203-020
NPN Transistor 5A 400V
utc High Voltage Switching Transistor
planar transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the
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2SC4466
2SC4466
2SC4466L-x-T3P-T
2SC4466G-x-T3P-T
QW-R214-019
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PDF
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC
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BD435
BD435
BD435L-T60-K
BD435G-T60-K
O-126
QW-R221-026
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PDF
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TRANSISTOR 2N 4401
Abstract: NEC 2N4400 2n4401
Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.
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OCR Scan
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2N4400
2N4401
2N4400,
2N4401
625mW
300at
150mA
2N4401)
2N4402,
2N4403
TRANSISTOR 2N 4401
NEC 2N4400
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4124DL
Abstract: 4124dl power transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high
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4124D
4124D
4124DL-T92-B
4124DG-T92-B
4124DL-T92-K
4124DG-T92-K
4124DL-T92-R
4124DG-T92-R
4124DL-T60-K
4124DL
4124dl power transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D-K
MJE13005D-K
QW-R213-021
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PDF
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NPN transistor Electronic ballast to92
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high
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13003DW
13003DW
13003DWL-x-TM3-T
13003DWL-x-T60-F-K
13003DWL-x-T92-A-B
13003DWL-x-T92-A-K
13003Dat
QW-R223-012
NPN transistor Electronic ballast to92
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PDF
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mje13007a
Abstract: No abstract text available
Text: MJE13007A SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220
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MJE13007A
MJE13007A
O-220
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