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    NPN 2A Search Results

    NPN 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31 PDF

    2n3901 equivalent

    Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) DESCRIPTION & FEATURES 1) Low VCE (sat) =0.5V(Typ) (IC /IB =2A/0.2A) 2) Epitaxial planar type, NPN silicon transistor FHD1766 ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89


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    FHD1766 OT-89 OT-89 FHD1766P FHD1766Q FHD1766R CHARA120 100MHz PDF

    TIP111

    Abstract: TIP112
    Text: TIP110, TIP111, TIP112 NPN General PurposeTransistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren NPN Version 2004-06-21 Collector current – Kollektorstrom 2A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g


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    TIP110, TIP111, TIP112 UL94V-0 O-220AB TIP110 TIP111 TIP115, TIP116, PDF

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


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    BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 PDF

    transistor buv 90

    Abstract: No abstract text available
    Text: SCS-THOMSON ^ 7# BUV26 MEDIUM POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED . LOW COLLECTOR EMITTER SATURATION APPLICATIONS . SWITCHING REGULATORS • MOTOR CONTROL DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN


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    BUV26 O-220 300ns, transistor buv 90 PDF

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379 PDF

    UTC 379

    Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379 UTC 379 transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D PDF

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


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    UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048 PDF

    SMMBT3904WT1

    Abstract: No abstract text available
    Text: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which


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    MMBT3904WT1, SMMBT3904WT1, MMBT3906WT1, OT-323/SC-70 AEC-Q101 SC-70 OT-323) SMMBT3904WT1 MMBT3906WT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which


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    MMBT3904WT1, SMMBT3904WT1, MMBT3906WT1, 323/SCâ SMMBT39 MMBT3904WT1/D PDF

    MJE13005D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D PDF

    transistor D4203D

    Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high


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    D4203D D4203D QW-R204-026 transistor D4203D D4203 d4203d TRANSISTOR D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V PDF

    NPN Transistor 5A 400V

    Abstract: utc High Voltage Switching Transistor planar transistor
    Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE


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    BU407 BU407 O-220 QW-R203-020 NPN Transistor 5A 400V utc High Voltage Switching Transistor planar transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the


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    2SC4466 2SC4466 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T QW-R214-019 PDF

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


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    BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC


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    BD435 BD435 BD435L-T60-K BD435G-T60-K O-126 QW-R221-026 PDF

    TRANSISTOR 2N 4401

    Abstract: NEC 2N4400 2n4401
    Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.


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    2N4400 2N4401 2N4400, 2N4401 625mW 300at 150mA 2N4401) 2N4402, 2N4403 TRANSISTOR 2N 4401 NEC 2N4400 PDF

    4124DL

    Abstract: 4124dl power transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high


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    4124D 4124D 4124DL-T92-B 4124DG-T92-B 4124DL-T92-K 4124DG-T92-K 4124DL-T92-R 4124DG-T92-R 4124DL-T60-K 4124DL 4124dl power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D-K MJE13005D-K QW-R213-021 PDF

    NPN transistor Electronic ballast to92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92 PDF

    mje13007a

    Abstract: No abstract text available
    Text: MJE13007A SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220


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    MJE13007A MJE13007A O-220 PDF