NE33284AS
Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
MODEL 536
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NE33284A
Abstract: NE33284AS NE33284A-SL NE33284A-T1
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
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NE33284A
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm
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NE33284A
NE33284A
24-Hour
NE33284A-SL
NE33284AS
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sn 7441
Abstract: No abstract text available
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn
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NE33200
NE33200
IS2212
24-Hour
sn 7441
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U430
Abstract: dlna circuit U308 U308-10 U309 U310 U311 Siliconix Application Note AN712 Siliconix JFETs Dual u430
Text: . Performance Curves NZA See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate
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IS12J_
U430
dlna circuit
U308
U308-10
U309
U310
U311
Siliconix Application Note
AN712
Siliconix JFETs Dual u430
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sn 7441
Abstract: No abstract text available
Text: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m
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NE33200
NE33200
NE33200N
NE33200M
IS221
sn 7441
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Untitled
Abstract: No abstract text available
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSO CIATED GAIN vs. FREQ UENCY V ds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASS O C IA TED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 |im • GATE W ID TH : 280 nm
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NE33200
NE33200
NE33200N
NE33200M
lS22l
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Relcom
Abstract: Siliconix Application Note U308 U309 U310
Text: . Perform ance Curves N Z A See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate
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1/-002D
SlG-150
AN71-2.
Relcom
Siliconix Application Note
U308
U309
U310
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NE33284A-SL
Abstract: NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE
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NE33284A
NE33284A
NE33284AS
NE33284A-T1
84ASL
NE33284A-SL.
NE33284A-SL
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MwT-471
Abstract: FET 5457 MwT-470
Text: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH
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NE24283B
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B SPACE QUALIFIED FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE
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NE24283B
NE24283B
24-Hour
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SSM2167-1RM-Reel
Abstract: RM-10 SSM2167 SSM2167-1 audio compression layer 2 low voltage Microphone Preamplifier
Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 A Adjustable Noise Gate Threshold Adjustable Compression Ratio
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SSM2167
10-Lead
SSM2167-1RM-Reel
RM-10
SSM2167
SSM2167-1
audio compression layer 2
low voltage Microphone Preamplifier
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low voltage Microphone Preamplifier
Abstract: SSM2167
Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 A Adjustable Noise Gate Threshold Adjustable Compression Ratio
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10-Lead
SSM2167
SSM2167
SSM2167-1
SSM2167-2.
low voltage Microphone Preamplifier
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low voltage Microphone Preamplifier
Abstract: SSM2167-1 MO-187BA RM-10 SSM2167 SSM2167-1RM-R2 SSM2167-EVAL
Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 A Adjustable Noise Gate Threshold Adjustable Compression Ratio
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SSM2167
10-Lead
C02628
low voltage Microphone Preamplifier
SSM2167-1
MO-187BA
RM-10
SSM2167
SSM2167-1RM-R2
SSM2167-EVAL
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Untitled
Abstract: No abstract text available
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to
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NE33200
NE33200
24-Hour
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Untitled
Abstract: No abstract text available
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to
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NE33200
NE33200
24-Hour
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AD1845
Abstract: automatic volume control of headphones noise gate DBU-1
Text: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165 FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload
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SSM2165
C2178a
AD1845
automatic volume control of headphones
noise gate
DBU-1
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GM 90 562 573
Abstract: NE33200 NE33200M NE33200N
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to
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NE33200
NE33200
24-Hour
GM 90 562 573
NE33200M
NE33200N
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NE33200
Abstract: NE33200M NE33200N
Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to
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NE33200
NE33200
24-Hour
NE33200M
NE33200N
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low voltage Microphone Preamplifier
Abstract: Microphone Preamplifier with Compression "Microphone Preamplifier" SSM2167 SSM2167-1 dj rm SSM2167-1RM-Reel noise gate micro preamplifier 10pin "Microphone Preamplifiers"
Text: PRELIMINARY TECHNICAL DATA a Low Voltage Microphone Preamplifier with Variable Compression & Noise Gating SSM2167 Preliminary Technical Data FEATURES Complete Microphone Conditioner in a 10-Pin Package Single +3 V Operation Low Shutdown Current < 50 µA Preset Noise Gate Threshold
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SSM2167
10-Pin
SSM2167
low voltage Microphone Preamplifier
Microphone Preamplifier with Compression
"Microphone Preamplifier"
SSM2167-1
dj rm
SSM2167-1RM-Reel
noise gate
micro preamplifier 10pin
"Microphone Preamplifiers"
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Microphone Preamplifier with Compression
Abstract: AD1845 AD1847 dbu-100 preamp guitar SSM2165 SSM2165-1 SSM2165-1P SSM2165-1S SSM2165-2P
Text: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165* FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload
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SSM2165*
SSM2165
SSM2165
syst325
Microphone Preamplifier with Compression
AD1845
AD1847
dbu-100
preamp guitar
SSM2165-1
SSM2165-1P
SSM2165-1S
SSM2165-2P
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SSM2167-1RMZ-R7
Abstract: low voltage Microphone Preamplifier
Text: FEATURES PIN CONFIGURATION Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N
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SSM2167
10-lead
Karaok40
91709-A
MO-187-BA
RM-10)
SSM2167-1RMZ-REEL
SSM2167-1RMZ-R7
low voltage Microphone Preamplifier
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Untitled
Abstract: No abstract text available
Text: PIN CONFIGURATION FEATURES Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N
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10-lead
SSM2167
SSM2167
91709-A
RM-10)
SSM2167-1RMZ-REEL
SSM2167-1RMZ-R7
SSM2167Z-EVAL
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NE23300
Abstract: No abstract text available
Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to
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NE23300
NE23300
24-Hour
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