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    NOISE GATE COMPRESSION Search Results

    NOISE GATE COMPRESSION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    NOISE GATE COMPRESSION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE33284AS

    Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
    Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:


    Original     		PDF NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1 MODEL 536

    NE33284A

    Abstract: NE33284AS NE33284A-SL NE33284A-T1
    Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:


    Original     		PDF NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1

    MwT-471

    Abstract: FET 5457 MwT-470
    Text: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH


    Original     		PDF

    NE24283B

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B SPACE QUALIFIED FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE


    Original     		PDF NE24283B NE24283B 24-Hour

    SSM2167-1RM-Reel

    Abstract: RM-10 SSM2167 SSM2167-1 audio compression layer 2 low voltage Microphone Preamplifier
    Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio


    Original     		PDF SSM2167 10-Lead SSM2167-1RM-Reel RM-10 SSM2167 SSM2167-1 audio compression layer 2 low voltage Microphone Preamplifier

    low voltage Microphone Preamplifier

    Abstract: SSM2167
    Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio


    Original     		PDF 10-Lead SSM2167 SSM2167 SSM2167-1 SSM2167-2. low voltage Microphone Preamplifier

    low voltage Microphone Preamplifier

    Abstract: SSM2167-1 MO-187BA RM-10 SSM2167 SSM2167-1RM-R2 SSM2167-EVAL
    Text: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio


    Original     		PDF SSM2167 10-Lead C02628 low voltage Microphone Preamplifier SSM2167-1 MO-187BA RM-10 SSM2167 SSM2167-1RM-R2 SSM2167-EVAL

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour

    AD1845

    Abstract: automatic volume control of headphones noise gate DBU-1
    Text: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165 FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload


    Original     		PDF SSM2165 C2178a AD1845 automatic volume control of headphones noise gate DBU-1

    GM 90 562 573

    Abstract: NE33200 NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour GM 90 562 573 NE33200M NE33200N

    NE33200

    Abstract: NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour NE33200M NE33200N

    low voltage Microphone Preamplifier

    Abstract: Microphone Preamplifier with Compression "Microphone Preamplifier" SSM2167 SSM2167-1 dj rm SSM2167-1RM-Reel noise gate micro preamplifier 10pin "Microphone Preamplifiers"
    Text: PRELIMINARY TECHNICAL DATA a Low Voltage Microphone Preamplifier with Variable Compression & Noise Gating SSM2167 Preliminary Technical Data FEATURES Complete Microphone Conditioner in a 10-Pin Package Single +3 V Operation Low Shutdown Current < 50 µA Preset Noise Gate Threshold


    Original     		PDF SSM2167 10-Pin SSM2167 low voltage Microphone Preamplifier Microphone Preamplifier with Compression "Microphone Preamplifier" SSM2167-1 dj rm SSM2167-1RM-Reel noise gate micro preamplifier 10pin "Microphone Preamplifiers"

    Microphone Preamplifier with Compression

    Abstract: AD1845 AD1847 dbu-100 preamp guitar SSM2165 SSM2165-1 SSM2165-1P SSM2165-1S SSM2165-2P
    Text: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165* FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload


    Original     		PDF SSM2165* SSM2165 SSM2165 syst325 Microphone Preamplifier with Compression AD1845 AD1847 dbu-100 preamp guitar SSM2165-1 SSM2165-1P SSM2165-1S SSM2165-2P

    Untitled

    Abstract: No abstract text available
    Text: PIN CONFIGURATION FEATURES Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N


    Original     		PDF 10-lead SSM2167 SSM2167 91709-A RM-10) SSM2167-1RMZ-REEL SSM2167-1RMZ-R7 SSM2167Z-EVAL

    NE23300

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE23300 NE23300 24-Hour

    NE33284A

    Abstract: NE33284A-SL NE33284AS
    Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm


    OCR Scan     		PDF NE33284A NE33284A 24-Hour NE33284A-SL NE33284AS

    sn 7441

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn


    OCR Scan     		PDF NE33200 NE33200 IS2212 24-Hour sn 7441

    U430

    Abstract: dlna circuit U308 U308-10 U309 U310 U311 Siliconix Application Note AN712 Siliconix JFETs Dual u430
    Text: . Performance Curves NZA See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate


    OCR Scan     		PDF IS12J_ U430 dlna circuit U308 U308-10 U309 U310 U311 Siliconix Application Note AN712 Siliconix JFETs Dual u430

    sn 7441

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m


    OCR Scan     		PDF NE33200 NE33200 NE33200N NE33200M IS221 sn 7441

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSO CIATED GAIN vs. FREQ UENCY V ds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASS O C IA TED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 |im • GATE W ID TH : 280 nm


    OCR Scan     		PDF NE33200 NE33200 NE33200N NE33200M lS22l

    Relcom

    Abstract: Siliconix Application Note U308 U309 U310
    Text: . Perform ance Curves N Z A See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate


    OCR Scan     		PDF 1/-002D SlG-150 AN71-2. Relcom Siliconix Application Note U308 U309 U310

    NE33284A-SL

    Abstract: NE33284AS
    Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		PDF NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. NE33284A-SL

    Untitled

    Abstract: No abstract text available
    Text: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO


    OCR Scan     		PDF