NE33284AS
Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
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NE33284AS
NE33284A-SL
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MODEL 536
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nec k 813
Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE33284A
NE33284A
NE33284A-SL
NE33284A-T1
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nec k 813
s11 diode shottky
IEI1207
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NE33284A-T1
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NE33284AS
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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Nec 4558 c
Abstract: NE33284A-SL NE33284AS 33284a
Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «
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Nec 4558 c
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NE33284A-SL
Abstract: NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE
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NE33284A
NE33284A
NE33284AS
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84ASL
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NE33284A
Abstract: NE33284AS NE33284A-SL NE33284A-T1
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
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NE33284AS
NE33284A-SL
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NE33284AS
Abstract: FR 401
Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y Vos = 2 V, I d s = 10 m A VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz CD GATE LENGTH: 0.3 nm
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NE33284A
NE33284A
IS12S21I
E33284A
NE33284AS
NE33284A-T1
84ASL
FR 401
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NE33284A
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm
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NE332
Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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4558
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V , Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 • HIG H ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz 21 m • GATE LENG TH : 0.3 |im CD
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lS22l
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