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    IC ATA 2398

    Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR E33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,


    OCR Scan     		PDF NE33284A NE33284A IC ATA 2398 ata 2398 transistor D 2395 te 2395 TRANSISTOR low noise FET NEC U TVR 681

    NE33284AS

    Abstract: FR 401
    Text: NEC SUPER LOW NOISE HJ FET FEATURES E33284A N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y Vos = 2 V, I d s = 10 m A VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz CD GATE LENGTH: 0.3 nm


    OCR Scan     		PDF NE33284A NE33284A IS12S21I E33284A NE33284AS NE33284A-T1 84ASL FR 401

    NE33284A

    Abstract: NE33284A-SL NE33284AS
    Text: SUPER LOW NOISE HJ FET E33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm


    OCR Scan     		PDF NE33284A NE33284A 24-Hour NE33284A-SL NE33284AS