NITRON Search Results

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

motorola 68hc05 architecture

Abstract: Nitron led kbi 68HC908QY4 68HC908QY2 motorola 68hc05 CDCWSEHC08 68HC05 68HC908QT4 HC08 KITMMEVS08QTQY
Contextual Info: NITRON FAMILY OF 8-BIT HC08 MICROCONTROLLERS Flash technology. Low pin count. Fast time to market. Are you ready for the new world of low-end 8-bit microcontrollers? Demand for low-end microcontrollers is greater than ever. That’s why you need a supplier you can count on, with a

NPT25100

Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader

NPTB0004

Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2

GaN amplifier temperature compensation

Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
Contextual Info: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents

ATC 600F

Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
Contextual Info: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM

NPTB00004

Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.

Gan on silicon transistor

Abstract: an-006 nitronex
Contextual Info: Application Note AN-006 Die Handling and Storage Recommendations Introduction Nitronex provides bare die for certain customers who wish to integrate devices into modules or other chip and wire subsystems. Unlike industry standard packaged products which have relatively uniform handling and

Contextual Info: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28

ATC 600F

Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
Contextual Info: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM

NPT25015

Abstract: matlab using ofdm using peak to average power GaN amplifier AN-003 an-003 nitronex AN003 2 amplifier circuit diagram Gan transistor amplifier circuit diagram Doherty amp
Contextual Info: Application Note AN-003 Wideband Doherty Amplifier for WiMAX Introduction Doherty Theory of Operation This application note describes the operational theory and characterization of a Doherty amplifier reference circuit that incorporates two Nitronex NPT25015 GaN

NL-1489

Abstract: ignitor Ignitron ignitron tube
Contextual Info: NL-1489 NATIONAL IG NITRON The NL-1489 Ignitrón is suitable for use as a switch in capacitor service or as an electronic crowbar at peak voltages up to 50 kilovolts» and peak current up to 90 kilo-amperes. The tube contains a holding anode as a means for keeping

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2

X-band Gan Hemt

Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Contextual Info: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2

NPTB0004

Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and

NPT25100

Abstract: matlab using ofdm using peak to average power amplifier diagram 6 ghz amplifier 20w ofdm using peak to average power using matlab an-005 nitronex main amplifier GaN PA inverter using two parallel transformer Doherty amp
Contextual Info: Application Note AN-005 2.5-2.7GHz 20W Doherty Amplifier for WiMAX Applications Using the NPT25100 Introduction Doherty Theory of Operation This application note describes the operational theory and characterization of a Doherty amplifier reference circuit that incorporates two Nitronex NPT25100 GaN

GRM188R72A104KA35D

Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
Contextual Info: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of

AD-009

Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603
Contextual Info: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM

ATC100B101JW500X

Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
Contextual Info: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected

NPTB00050B

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

post burn-in

Abstract: AN007 Reliability Test Methods for Packaged Devices
Contextual Info: Application Note AN-007 Nitronex Device Burn-in Introduction Packaged Device Burn-In Procedure Nitronex performs 100% burn-in of packaged devices to remove most of the shift of VT and IMAX over the device’s lifetime. Due to the difficultly of consistently

2n2619

Contextual Info: jG/nitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JE D E C 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N1770-78 2N2619 2N1600A2N1604A - - 2N1842-50 - 25-400 25-600 25-600

xc912dg128

Abstract: MC9S12D64 xc912bc32 MC3PHAC XC68HC705B32 MC908AB32CFU MC9S12DP MC68 MC68376 MC908AZ60
Contextual Info: MICROCONTROLLERS QUARTER 3, 2002 SG1006/D REV 1 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Product MC68HC908QT1 MC68HC908QT2 Description Introducing the Nitron Family of HC08s. This family of 8- and 16-pin microcontrollers includes six different devices featuring 1.5K to 4K bytes of FLASH, a 2-ch

NITRON

Abstract: 68HC908QT4 CDCWSEHC08 HC08 MOTOROLA CATALOG motorola HC08 68HC05 KITMMEVS08QTQY MON08 68hc05 architecture
Contextual Info: NITRON FAMILY OF 8-BIT HC08 MICROCONTROLLERS Flash technology. Low pin count. Fast time to market. Are you ready for the new world of low-end 8-bit microcontrollers? Demand for low-end microcontrollers is greater than ever. That’s why you need a supplier you can count on, with a