NIHON INTER ELECTRONICS Search Results

MB111

Abstract: marking JB SCHOTTKY BARRIER DIODE 25CC
Contextual Info: 10A120VTm150V Fully Molded similar to TO-220AC FSHS10A12 ft«» Nihon Inter Electronics Corporation Specification yT y i/ayh Construction Schottky Barrier Diode Application High Frequency Rectification 1 j ir—K MAXIMUM RATINGS Ta=25'C: Unless otherwise specified

10a45

Abstract: marking WMM
Contextual Info: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

5A45V

Abstract: FSHS05A045 1331C FC7 marking
Contextual Info: 5A45VTm150V ' Ííj J'¡L Fully Molded similar to TO-220AC ' FSHS05A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 -y T Schottky Barrier Diode Application High Frequency Rectification fflìÉ ÿA Jr-Y MAXIMUM RATINGS Ta—25 C- Unless otherwise specified

diode 1G8

Abstract: nihon diode 1G8
Contextual Info: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

Nihon Inter Electronics

Contextual Info: Safe Using on NIEC Products In the interest of product improvement, Nihon Inter Electronics Corporation NIEC reserves the right to change specifications without notice, and so use of the updated version of Date Book or Specifications and Catalog are requested.

FCQS30A045

Contextual Info: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification

TM 5503

Abstract: UCU20C20 co140 5S24
Contextual Info: 20A 200V 31ns Similar to TO-263 # y — Fast Recovery Cathode common UCU20C20 ttif* Nihon Inter Electronics Corporation Specification. mm fr d Construction Diffusion Type Silicon Diode iWi/ r I implication High Frequency Rectification MAXIMUM RATINGS T a= 2 5 t: Unless otherwise specified

l55a

Abstract: T0220AB
Contextual Info: # y ~ F = i^ e > - 8A 35VTjw150V S B D Fully Molded similar to TO-22QAB Cathode common FCQS08A035 tttis 0 * ^ f c ïtè tt Nihon Inter Electronics Corporation Specification. s' Construction ilii Application Schottky B arrier Diode H igh Frequency Rectification

FCHS10A12

Contextual Info: 1 0 A 1 2 0 V T jw 1 5 0 V Fully Molded similar to TO-220AB FCHS10A12 ttii# Nihon Inter Electronics Corporation Specification is 3 y Construction Schottky Barrier Diode Application High Frequency Rectification MAXIMUM RATINGS Ta=25°C Unless otherwise specified

FSQS15A045

Abstract: 118T
Contextual Info: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified

UCU20C30

Abstract: marking WMM UCU20C
Contextual Info: # y— Fast Recovery Cathode common 20A 300V 33ns UCU20C30 Similar to TO-263 i± m m Nihon Inter Electronics Corporation Specification. FRD Construction ff lìÉ Application Diflusion Type Silicon Diode High Frequency Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

FCHS20A

Abstract: WH 1602 K FCHS20A045 RECT18
Contextual Info: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification

Contextual Info: nil Nihon Inter Electronics Corporation 1.7A Avg 100 Volts ~X SBD EA20QS10 EA20QS10-F ) (~ MAXIMUM RATINGS •OUTLINE DRAWING(mm) ' ' ' Type S y m b o r\^ Rating < v> & L l -}ifi ',ti h. Repetitive Peak Reverse Voltage f- fl* i/i P.C.Board mounted * Average

Diodo Schottky

Abstract: DIODO
Contextual Info: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified

FRQS20A045

Abstract: UL94V-01
Contextual Info: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified

FCQS20A045

Abstract: FCQS20
Contextual Info: 20A 45V Tjw150V 2 y — h' = • ¥ > - SBD Fully Molded similar to TO-22QAB Cathode mmmon FCQS20A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 y h y 7 Schottky Barrier Diode Application High Frequency Rectification M cxm z h- K

RECTIFIER DIODES ON Semiconductor

Abstract: kyosan POWER kyosan THYRISTOR GTO
Contextual Info: NIEC, THE VITAL ELEMENT Nihon Inter Electronics Corporation NIEC was the first company to manufacture Silicon Rectifier Diodes in Japan. Founded in 1957 by the parent company, Kyosan Electric Mfg. Co., Ltd. NIEC manufactures high quality power semiconductor products which include Power

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

fcqs10a045

Abstract: 10a45 IMTIA
Contextual Info: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified

DIODE w2x

Contextual Info: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

FCQS30A065

Abstract: 2007A
Contextual Info: SBD Cathode common 30A 65V Tjw150 V FCQS30A065 Fully Molded similar to TO-22QAB ttflW Nihon Inter Electronics Corporation Specification Construction a -y h y r Schottky Barrier Diode n r — k m Application H High Frequency Rectification MAXIMUM RATINGS Ta—25°C: Unless otherwise specified

Contextual Info: r — SB D Anode common 20A 120VTjw150V FRHS20A12 Fully Molded similar to TO-22QAB ttfl* 0 * ^ Nihon Inter Electronics Corporation Specification mm Construction ' > 3 -y h y T jfs f Schottky Barrier Diode K m Application High Frequency Rectification MAXIMUM RATINGS T a = 25'C: Unless otherwise specified

Contextual Info: 3A 10 0 V Diode 1/4 S M D Type : Type : NSD03A10 Nihon Inter Electronics Corporation Contraction: Surface Mounting,Diffusion-type Silicon Diode ± û.2 2j ffljfe : Application : Rectification of Power Sourses 0 ./& Í 7 .0 *z Ai 0 O 3 A T 3! S ^ 'DC AL