EC10DS2 Search Results

Contextual Info: DIODE Type : EC10DS2 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

TL1078

Contextual Info: Standard Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C 0.5 Tl=107℃ 8 1.1 10 150 6 IRM（µA) 25°C Tjmax (°C) Case Outline SOD-123 EP05DA40 400 SMA EC10DS1 100 1 Ta=25℃ 25 1.1 10 150 7 EC10DS2 200 1 Ta=25℃ 25 1.1 10 150

EC10DS2

Contextual Info: DIODE Type : EC10DS2 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

6CW40

Abstract: 6cw4 NSF03A20 EP05Q04 do-214 DD100 10MQ090 6cw10
Contextual Info: 1/2 HIGH POWER SINGLE & DUAL DIODES RECTIFIER DIODES Type DO214 EC8FS6 EC10DS1 EC10DS2 EC10DS4 EC10DS6 Single/ VRRM IO AV @ Equivalents Dual V A rect - S S S S S 600 100 200 400 600 0.8 1.0 1.0 1.0 1.0 TC ˚C VFM @ V IFM A IFSM A IRRM mA Tjmax ˚C SQP £ each

EC10DS1

Abstract: EC10DS2 EC10DS4 EC10DS6
Contextual Info: SILICON RECTIFIER DIODE EC10DS1 EC10DS2 EC10DS4 EC10DS6 ÎA/IOO— 600V FEATURES » Miniature Size, Surface Mount Device ° High Surge Capability o Low Forward Voltage Drop ~T ° Low Reverse Leakage Current SOLDERLING PAD ° Packaged in 12mm Tape and Reel

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: EC10DS1 EC10DS2 EC10DS4 EC10DS6
Contextual Info: EC10DS1 EC10DS2 EC10DS4 EC10DS6 1A/100~600V SILICON RECTIFIER DIODE FEATU RES » Miniature Size, Surface Mount Device 2.2 .Q87 5 .31.209 ) -4.7U 85)_ j.7U 68)_ High Surge Capability 4 .3 (.¡6 9 l o Low Forward Voltage Drop 2.7Í.106) i.MMn S o-a-QTO 0.01.000)

EC10DS2

Contextual Info: DIODE Type : EC10DS2 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

Contextual Info: SILICON RECTIFIER DIODE EC10DS1 EC10DS2 EC10DS4 EC10DS6 1A/100~600V FEATURES 0 Miniature Size , Surface Mount Device ° High Surge Capability o Low Forward Voltage Drop ° Low Reverse Leakage Current ° Packaged in 12mm Tape and Reel ° Not Rolling During Assembly

EC10DS4

Abstract: EC10DS1
Contextual Info: 1A Avg. 400 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

3PHA 20

Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
Contextual Info: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は，次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様

U176

Contextual Info: SILICON RECTIFIER DIODE i a /100~600 v “ “ ¡¡f* FEATURES »Miniature Size, Surface Mount Device OÄOTO High Surge Capability n r o.oi.ooo u1.71.067) 1.31.051) o Low Forward Voltage Drop • Low Reverse Leakage Current SOLDERL1NG PAD D 2.0 ° Packaged in 12mm Tape and Reel

Contextual Info: Type：EC10DS2 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

EC10DS4

Contextual Info: Type：EC10DS2 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

Contextual Info: DIODE Type : EC10DS4 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

Contextual Info: 1A Avg. •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage V RRM 200 V

EC10DS1

Contextual Info: DIODE Type : EC10DS1 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

Contextual Info: DIODE Type : EC10DS4 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Approx Net Weight:0.06g

EC10DS4

Contextual Info: Type：EC10DS4 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

Contextual Info: Type：EC10DS2 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ