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Nihon Inter Electronics Corporation EP10HY03-X 0.6 A, 30 V, SILICON, SIGNAL DIODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	EP10HY03-X		21,000			1 $0.072 10 $0.072 100 $0.072 1000 $0.072 10000 $0.0135	Buy Now
	EP10HY03-X		21,000			1 $0.072 10 $0.072 100 $0.072 1000 $0.072 10000 $0.0135	Buy Now
Nihon Inter Electronics Corporation EP10HY03-TE8L3 30 V, 1 A, SCHOTTKY BARRIER DIODE, SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	EP10HY03-TE8L3		9,000			1 - 10 - 100 - 1000 - 10000 -	Buy Now

EP10HY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EP10HY03		Nihon Inter Electronics	SBD 1A 30V		Original	PDF

EP10HY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1A Avg. 30 Volts SBD EP10HY03 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit くり返しピーク逆電圧 Repetitive Peak Reverse Voltage V RRM 30 V 直流順電 Direct Forward Current 流直流 Direct Current	Original	PDF	EP10HY03
EP10HY03 Abstract: EP10HY Text: SBD Type : EP10H EP10HY03 OUTLINE DRAWING 1A 30V Tj:150°°C FEATURES FEATURES * JEDEC SOD-123 Package * Very Low profile 1.1mm Max * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Low Thermal Resistance * Packaged in 8mm Tape and Reel	Original	PDF	EP10H EP10HY03 OD-123 20mVRMS 100kHz EP10HY03 EP10HY
EP10HY03 Abstract: No abstract text available Text: 1A Avg. 30 Volts SBD EP10HY03 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit くり返しピーク逆電圧 Repetitive Peak Reverse Voltage V RRM 30 V 直流順電 Direct Forward Current 流直流 Direct Current	Original	PDF	EP10HY03 EP10HY03
EP10HY Abstract: No abstract text available Text: 1.0A 30V Tjw150℃ ショットキーバリアダイオード Schottky Barrier Diode S M D Type 外形図 EP10HY03 ショットキーバリアダイオード構造 Construction Schottky barrier diode 逆方向接続保護用用途 Application For protection use of battery	Original	PDF	Tjw150 EP10HY03 25unless 20mVRMS 100kHz EP10HY
3PHA 20 Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は，次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様	Original	PDF	TYPE/SOD-123 10DDA EP05DA EP05DA40 10JDA 10EDA 10EDB EC10DS 3PHA 20 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
diode smd ED 74 Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR Text: 目录二极管—电磁干扰及电源的效率 —————————— 参考整流杂波 ———————————————— 有3个系列的SBD ——————————————— SBD和热失控 ————————————————	Original	PDF	O-220 O-247 O-247 aSn-37Pb bSn-37Pb diode smd ED 74 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
FCH20U10 Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045 Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode	Original	PDF	OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
30V 20A 10KHz power MOSFET Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100 Text: 目录二极管是功率半导体的基础 1 二极管的构造标记、基本特性１一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 （正向电力损耗）加上（反向电力损耗） — 使用PN二极管时我们可以	Original	PDF	AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
sony flyback transformer Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————	Original	PDF
pn junction diode structure Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss	Original	PDF
PT76S16 Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
31DF2 diode Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인	Original	PDF	2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
508RP Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40 Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	PDF	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

FCGS20A12 Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10 Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
schottky barrier diode b22 Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08 Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode	Original	PDF	OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
30PHA20 Abstract: 10EQMA04 21DQ09 DIODES ta-59 EP10QY04 10eqma Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline Axial Lead Type 11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 30 40 40 60 90 100 200 1 1 1 1 1 1 1 Ta=55℃ Ta=48℃ Ta=43℃	Original	PDF	11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 11EQ04 11EQ06 11EQ09 30PHA20 21DQ09 DIODES ta-59 EP10QY04 10eqma
Untitled Abstract: No abstract text available Text: 1 目次はじめにダイオード— ノイズそして電源の効率—————参考整流ノイズ————————————————————————– 3シリーズのSBD—————————————————————————	Original	PDF