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Abstract: No abstract text available
Text: SBD Type :11EQS06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS06
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100volts
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Untitled
Abstract: No abstract text available
Text: 60 Volts 1A Avg. 11EQS06 SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage
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11EQS06
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11EQS06
Abstract: No abstract text available
Text: 1A Avg. 60 Volts SBD 11EQS06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage
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11EQS06
11EQS06
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11eqs06
Abstract: No abstract text available
Text: SBD Type :11EQS06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS06
30volts
100volts
11eqs06
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11eqs06
Abstract: No abstract text available
Text: SBD Type :11EQS06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS06
30volts
100volts
11EQS06
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30PHA20
Abstract: 10EQMA04 21DQ09 DIODES ta-59 EP10QY04 10eqma
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline Axial Lead Type 11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 30 40 40 60 90 100 200 1 1 1 1 1 1 1 Ta=55℃ Ta=48℃ Ta=43℃
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11EQS03L
11EQS04
10EQMA04
11EQS06
11EQS09
11EQS10
10EHA20
11EQ04
11EQ06
11EQ09
30PHA20
21DQ09 DIODES
ta-59
EP10QY04
10eqma
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Untitled
Abstract: No abstract text available
Text: SBD 構 Type：11EQS06 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type11EQS06
11EQS06
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Untitled
Abstract: No abstract text available
Text: 連 載 セキュリティー機器やロボットを作ろう 〈第 6 回〉ガラス破り検出器の製作 秦 明宏 Akihiro Hata 最近の空き巣犯罪の手口でもっとも多いのは，ガラ 役目を果たしてくれません． ス破りだそうです．これは窓ガラスなどの一部を破壊
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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11eqs06
Abstract: No abstract text available
Text: SBD 構 Type：11EQS06 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type11EQS06
11EQS06
11eqs06
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50~60V FEATURES • Miniature Size MAX 'DIA 2.7 .106 , < ± ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024) d ia 0.54C021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available
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11EQS05
11EQS06
54C021)
GDD17b2
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50— 60V FEATURES ° Miniature Size .1061 M AX ° Low Forward Voltage Drop DIA 0 Low Power Loss, High Efficiency 0 High Surge Capability o 20 Volts thru 100 Volts Types Available ° 26mm and 52mm Inside Tape Spacing
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A/50--
11EQS05
11EQS06
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50PQSA045
Abstract: 21DQ10 50PHSA12 11EQS04 11DQ10 11EQS10 31DQ04 10EHA20 21dq03l 11DQ04
Text: Latest Data sheets are available at URL : http://www.niec.to.jp/ f f * "fy"' - Mton Inter Electronics Corporation •FOREIGN SALES V The value would changed without notice. Printed in MARCH 2009 1-19-5 Nishi-Shinjuku.Meiho Bidg.#2 Shinjuku-ku, Tokyo 16 0-0 023 JA PA N
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11EQS03L
11EQS04
11EQS06
11EQS10
10EHA20
11EQ04
11EQ06
11EQ10
11DQ03L
11DQ04
50PQSA045
21DQ10
50PHSA12
11DQ10
31DQ04
21dq03l
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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11EQS05
Abstract: 11EQS06
Text: SCHOTTKY BARRIER DIODE i.ia / 50~ 60v iieq so s iieq sos FEATURES 2.7 .106 nTA MAX U1A • Miniature Size - 0 ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024)d ia 0.54(.021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available
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11EQS05
11EQS06
11EQS05
U1EQS06)
UEQS05
Q0017b2
11EQS06
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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