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    onsemi NGTB20N120IHRWG

    IGBT TRENCH/FS 1200V 40A TO247
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    DigiKey NGTB20N120IHRWG Tube
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    Rochester Electronics NGTB20N120IHRWG 143 1
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    Flip Electronics NGTB20N120IHRWG 58
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    Aptina Imaging NGTB20N120IHRWG

    Trans IGBT Chip N-CH 1200V 40A 384mW 3-Pin(3+Tab) TO-247 Tube
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    Verical NGTB20N120IHRWG 143 96
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    NGTB20N120IHRWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB20N120IHRWG On Semiconductor IGBT 1200V 20A FS2-RC Induction Heating Original PDF

    NGTB20N120IHRWG Datasheets Context Search

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    20N120IHR

    Abstract: No abstract text available
    Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D 20N120IHR

    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D