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    20N120IHR

    Abstract: No abstract text available
    Text: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D 20N120IHR

    Untitled

    Abstract: No abstract text available
    Text: 20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: 20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D

    Untitled

    Abstract: No abstract text available
    Text: 20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers


    Original
    PDF NGTB20N120IHRWG NGTB20N120IHR/D