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NGB8206NT4 Price and Stock

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Littelfuse Inc NGB8206NT4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NT4G	Reel			800	1 - 10 - 100 - 1000 $0.91564 10000 $0.875	Buy Now
Rochester Electronics LLC NGB8206NT4G INSULATED GATE BIPOLAR TRANSISTO
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DigiKey	NGB8206NT4G	Bulk			254	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Aptina Imaging NGB8206NT4G Trans IGBT Chip N-CH 390V 20A 150000mW 3-Pin(2+Tab) D2PAK T/R
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Verical	NGB8206NT4G		892		281	1 - 10 - 100 - 1000 $1.2875 10000 $1.2875	Buy Now
onsemi NGB8206NT4G NGB8206 - Insulated Gate Bipolar Transistor, 20A, 390V, N-Channel '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	NGB8206NT4G		892		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now
ComSIT USA	NGB8206NT4G		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NGB8206NT4 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGB8206NT4		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D²PAK; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800		Original	PDF
NGB8206NT4		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK		Original	PDF
NGB8206NT4G		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK		Original	PDF
NGB8206NT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor		Original	PDF

NGB8206NT4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
418B-04 Abstract: GB8206 Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206
BS170 116 Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2 Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R	Original	PDF	2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
ignition IGBT Abstract: No abstract text available Text: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive	Original	PDF	O-252) NGD8201NT4 NGD8205NT4 NGD18N40CLBT4 NGD15N41CLT4 O-264) NGB8202NT4 NGB8206NT4 NGB18N40CLBT4 ignition IGBT
8206NG Abstract: NGB8206 Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D 8206NG NGB8206
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	PDF	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
Untitled Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D
GB8206 Abstract: NGB8206A NGB8206NG Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG
GB8206 Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N, NGB8206AN NGB8206N/D GB8206
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
b8206 Abstract: B8206n Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D b8206 B8206n
Untitled Abstract: No abstract text available Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8206N NGB8206N/D
NGB8206N Abstract: NGB8206NT4 Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N NGB8206N/D NGB8206N NGB8206NT4
b8206n Abstract: ignition IGBT NGB8206 Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8206N NGB8206N b8206n ignition IGBT NGB8206