NEUTRON SENSITIVE PIN DIODE Search Results

phototransistor ultraviolet

Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
Contextual Info: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to

HP optocoupler

Abstract: photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55
Contextual Info: ÉÉSSfflieÉ . . . % - • • - HEWLETT ■-■-ÿ-ii* , ; . " 1 • ' ÉPPLICATION NOTE 1023 PACKARD ■Iii|iinn»naii8— ■ ■ ig j; - ; This application note describes the im m unity of HewlettPackard optocouplers to the effects of high radiation

solar power plant

Abstract: ASTM-F-1892 radiation cots cmos van allen belt van allen belt satellite geomagnetic electromagnetic bomb Fireball P-Channel Depletion Mosfets SOLAR TRANSISTOR
Contextual Info: N RADIATION OWNER’S MANUAL Table of Contents – Issues, Environments, Effects Page Radiation Needs Today Providing a Unique and Cost-Effective Approach to Your Radiation Resistance Needs The Growing Radiation Market Incorporating Radiation Design Dealing with an Array of Radiation Exposures

Semiconductor Nuclear Radiation Detector

Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Contextual Info: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each

Zener Diodes 300v

Abstract: ge VARISTOR DATA SHEET GE-MOV AN9307 zener diode 20a varistors crossed 22b zener diode 1015n ge varistor 250a diode zener ZL 15
Contextual Info: Harris Semiconductor No. AN9307.1 Harris MOVs March 1995 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage protection and have bee available in conventional package

diode zener ZL 15

Abstract: gemov AN9769 varistor fail GE-MOV Metal Oxide Varistor 300v diode zener ZL 10 diode zener ZL 20 VARISTOR
Contextual Info: Harris Semiconductor No. AN9307.2 Harris Suppression Products January 1998 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage

TL 1838

Abstract: Neutron sensitive PIN diode
Contextual Info: H A R R IS S E M I C O N D U C T O R FRX234D, FRX234R FRj 234H Radiation Hardened N-Channel Power MOSFETs June 1994 Package Features • 2.5A, 250V, RDS(on) = 0.7000 LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

Contextual Info: îsï h a r r is U U FRX9130D, FRX9130R E S E M IC O N D U C T O R H •# O / l I_ l Radiation Hardened P-Channel Power MOSFETs june 1994 Package Features • V 3A, -100V, RDS on = 0.550il LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: H A RR IS S E M I C O N D S E C T O R a H A R R is SEM IC O N D U C TO R b3E D • 4 3 G 2 27 1 0 G 4 7 b 2 0 hlS H H A S FRX130D, FRX130R FRjj d30H Radiation Hardened N-Channel Power MOSFETs August 1993 Features • • • • • • • Package 6A, 100V, RDS on) = 0.1800

Contextual Info: FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of

SRFE

Contextual Info: H a rris 2N7291D, 2N7291R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRK150 D, R, H November 1994 1 ^ 7 2 9 1 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 40A, 100V, RDS(on) = 0.055Q

clcc

Contextual Info: i^ngEs FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, ros ON = 0.180i2 The Harris S em iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancem ent types with

Contextual Info: m a r r is 2N7329D, 2N7329R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRE9160 D, R, H November 1994 1 ^ 7 3 2 9 H R a d iatio n H ard en e d P -C h a n n e l P o w er M O S FE Ts Package Features • 30A , -1 00V. RDS(on) = 0 .0 9 5 Q

2E12

Abstract: FRX130D FRX130H FRX130R
Contextual Info: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to

CLCC-18

Contextual Info: FRX130D, FRX130R, FRX130H h a r r is S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, Td s ON = 0-180i2 The Harris Sem iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of

2E12

Abstract: FRX130D FRX130H FRX130R
Contextual Info: FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs January 1997 Features Description • 6A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of

Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features n 18 Bit Bidirectional Bus Interface n Rad Hard: 300k Rad Si Total Dose n Single +3.3 V Power Supply n Supports IEEE standard 1149.1-2001 Boundary Scan n Functional as One 18 Bit Transceiver or

Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

5962-07A06

Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

5962-07A05

Abstract: HX422D MIL-PRF38535 ES1V
Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

5962-07A04

Abstract: HX422R smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

HX422R

Abstract: 5962-07A04
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

pin diodes radiation detector

Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
Contextual Info: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to